摘要:
The present invention concerns a method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method. According to the invention an organometallic cerium compound containing at least one cyclopentadienyl type ligand is used as a precursor for the dopant cerium. The cyclopentadienyl type cerium compounds can be used as ALE precursors at about 400° C. substrate temperatures without any observable thermal decomposition during processing.
摘要:
The invention relates to dendrimeric organometallic bismuth compounds (bismuth dendrimers), which can advantageously be used as x-ray contrast media, as well as processes for their production.
摘要:
The invention relates to the use of boron-containing organic group-V compounds for the deposition of the elements of the Vth main group on substrates by gas-phase deposition.
摘要:
In a process for the production of thin films and epitaxial layers by gas-phase deposition, intramolecularly stabilized organometallic compounds are employed as a source of metal.
摘要:
The invention relates to the use of cyclic organometallic compounds as components in coordination catalyst systems, to corresponding coordination catalyst systems and also to processes for the preparation of polymers by coordination polymerization and of unsaturated hydrocarbons by catalyzed metathesis of alkenes and alkynes using such coordination catalyst systems.
摘要:
The invention relates to organometallic compounds of the elements aluminum, gallium and indium which are two-fold intramolecularly stabilized, and to the use thereof for the production of thin films and epitaxial layers by deposition from the liquid or solid phase.
摘要:
In a process for the production of thin films and epitaxial layers by gas-phase deposition, intramolecularly stabilized organometallic compounds are employed as a source of metal.