摘要:
An optical transmission module that can be produced more easily and uses a shorter wiring pattern connecting the driving device and the light-emitting device than the conventional light-emitting apparatus, with the driving device and the light-emitting device arranged close to each other. The light-emitting device and the light-receiving device for monitoring the backward light emitted from the light-emitting device are arranged on a main surface of the substrate. The driving device is disposed on a bottom of a concave formed between the light-emitting device and the light-receiving device so that the driving device is lower than a straight line connecting a backward light emitting point of the light-emitting device and a backward light receiving point of the light-receiving device.
摘要:
A moisture detection sensor includes a resonant circuit composed of an antenna coil 53 and a capacitor C. A noncontact tag composed of covering materials 51 and 57 covers the resonant circuit. The capacitor C has a pair of electrodes 52 and 56 and a dielectric 55 interposed between the electrodes 52 and 56, and the covering material 57 contains a through-hole 57a that allows the liquid to infiltrate into the dielectric 55 from outside.
摘要:
An object of the present invention is to provide a semiconductor photodetecting device that enables a solid-state image sensor to meet requirement of higher quality imaging and more reduction in cost, and the semiconductor photodetecting device includes a semiconductor substrate, and an epitaxial layer that is formed on the semiconductor substrate by an epitaxial growth method and a vapor phase growth method. The epitaxial layer is formed by sequentially stacking a first pn junction layer, a first insulating layer, a second pn junction layer, a second insulating layer, and a third pn junction layer. The first pn junction layer, the second pn junction layer, and the third pn junction layer have respective band gaps which are different from one another, by changing their crystalline structures or film compositions.
摘要:
A photo-detecting device that enables a solid-state image sensor to meet the requirement of higher quality imaging including: a first silicon substrate 120 having p- and n-type regions; a first SOI substrate 130 in which a second silicon substrate 132 having p- and n-type regions is formed on a first SOI insulation layer 131; and a second SOI substrate 140 in which a third silicon substrate 142 having p- and n-type regions is formed on a second SOI insulation layer 141. Each pn-junction of the first silicon substrate 120, the second silicon substrate 132, and the third silicon substrate 142 forms a photodiode for converting incident light into electric charges. The depth of each pn-junction, which is measured from the surface of the second SOI substrate 140 irradiated with the light, is determined according to absorption length of light to be converted into electric charges.
摘要:
An optical transmission module that can be produced more easily and uses a shorter wiring pattern connecting the driving device and the light-emitting device than the conventional light-emitting apparatus, with the driving device and the light-emitting device arranged close to each other. The light-emitting device and the light-receiving device for monitoring the backward light emitted from the light-emitting device are arranged on a main surface of the substrate. The driving device is disposed on a bottom of a concave formed between the light-emitting device and the light-receiving device so that the driving device is lower than a straight line connecting a backward light emitting point of the light-emitting device and a backward light receiving point of the light-receiving device.
摘要:
To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.