公开(公告)号：US20110226178A1

公开(公告)日：2011-09-22

申请号：US13074261

申请日：2011-03-29

申请人： Norihiko TSUJI ,  Masayuki Moroi ,  Atsushi Sawachi ,  Sasumu Katoh

发明人： Norihiko TSUJI ,  Masayuki Moroi ,  Atsushi Sawachi ,  Sasumu Katoh

IPC分类号： C23C14/00

CPC分类号： C23C16/45544 ,  B29C66/71 ,  C23C16/45517 ,  C23C16/45527 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31691

摘要： A film deposition system which a cycle of alternately supplying a first reactive gas and a second reactive gas and exhausting them is repeated twice or more in a vacuum vessel to cause reaction between the two gases, thereby depositing thin films on substrate surfaces, the film deposition system includes: a plurality of lower members having substrate-placing areas on which substrates will be placed; a plurality of upper members so placed that they face the lower members to form processing spaces together with the substrate-placing areas; a first reactive gas supply unit and a second reactive gas supply unit for supplying a first reactive gas and a second reactive gas, respectively, to the processing spaces; a purge gas supply unit for supplying a purge gas in the period between a first reactive gas supply period and a second reactive gas supply period; exhaust openings, situated along circumferences of the processing spaces, for communicating the inside of the processing spaces with the atmosphere in the vacuum vessel that is outside of the processing spaces; and an evacuating unit for evacuating the processing spaces via the atmosphere in the exhaust openings and the vacuum vessel.

摘要翻译： 在真空容器中重复两次或更多次交替地供给第一反应气体和第二反应气体并使其排出的循环的膜沉积系统，以在两种气体之间引起反应，从而在基板表面上沉积薄膜，膜沉积 系统包括：具有放置基板的基板放置区域的多个下部构件; 多个上部构件，使得它们面对下部构件以与基底放置区域一起形成处理空间; 第一反应气体供应单元和第二反应气体供应单元，用于将第一反应气体和第二反应气体分别供应到处理空间; 净化气体供给单元，用于在第一反应气体供给期间和第二反应气体供给期间的期间供给净化气体; 位于处理空间周围的排气口，用于将处理空间内部与处理空间外的真空容器内的气氛连通; 以及用于通过排气口和真空容器中的大气抽空处理空间的排气单元。

公开(公告)号：US20050030804A1

公开(公告)日：2005-02-10

申请号：US10936735

申请日：2004-09-07

申请人： Toshiyuki Nagata ,  Hiroyuki Yoshida ,  Masayuki Moroi ,  Atsushi Satoh

发明人： Toshiyuki Nagata ,  Hiroyuki Yoshida ,  Masayuki Moroi ,  Atsushi Satoh

IPC分类号： H01B13/00 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

CPC分类号： H01L27/10888 ,  H01L27/0207 ,  H01L27/10811 ,  H01L27/10882

摘要： In a DRAM array using a capacitor-under-bitline (CUB) layout, the plate layer of the capacitor is significantly reduced in area to reduce misalignments in connections between the bitline and the underlying transistors.

摘要翻译： 在使用电容器下位线（CUB）布局的DRAM阵列中，电容器的平板层的面积显着减小，以减少位线和底层晶体管之间的连接中的不对准。

公开(公告)号：US4960298A

公开(公告)日：1990-10-02

申请号：US287367

申请日：1988-12-20

申请人： Masayuki Moroi

发明人： Masayuki Moroi

IPC分类号： H01L21/683

CPC分类号： H01L21/6838 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/138 ,  Y10T29/53191

摘要： The invention is a device for picking-up a semiconductor wafer without using the edges of the wafer thereby eliminating stress to the wafer. The picker moves up and down within a robotic arm and comes to rest in the same location each time through the use of tapered posts.

摘要翻译： 本发明是用于拾取半导体晶片而不使用晶片的边缘的装置，从而消除了对晶片的应力。 拾取器在机器手臂内上下移动，每次通过使用锥形支柱在相同的位置休息。