公开(公告)号：US06879258B2

公开(公告)日：2005-04-12

申请号：US10736603

申请日：2003-12-17

申请人： Nobukazu Kuroda ,  Kazuaki Suzuki

发明人： Nobukazu Kuroda ,  Kazuaki Suzuki

IPC分类号： G06K19/00 ,  B42D15/10 ,  G06K19/07 ,  G06K19/077 ,  H05K1/03 ,  H05K1/16 ,  G08B13/14

CPC分类号： G06K19/0723 ,  H05K1/0306 ,  H05K1/162

摘要： An IC card 10A has a mica capacitor that comprises a mica film 1 and electrodes 6a, 6b formed on both sides thereof, where the mica film 1 serves as a mounting substrate for an antenna coil 2 and an IC chip 3, thereby reducing profile of an IC card and also reducing its cost of manufacture and to stabilize its resonance frequency.

摘要翻译： IC卡10A具有云母电容器，其包括云母膜1和形成在其两侧的电极6a，6b，其中云母膜1用作天线线圈2的安装基板和IC芯片3，由此减小 一个IC卡，同时也降低了其制造成本和稳定其共振频率。

公开(公告)号：US20050019289A1

公开(公告)日：2005-01-27

申请号：US10492392

申请日：2002-10-10

申请人： Yoshihiro Hirata ,  Yoshio Ueda ,  Hiroaki Takase ,  Kazuaki Suzuki

发明人： Yoshihiro Hirata ,  Yoshio Ueda ,  Hiroaki Takase ,  Kazuaki Suzuki

IPC分类号： A61K8/04 ,  A61K8/29 ,  A61K33/24 ,  A61P17/16 ,  A61Q5/00 ,  A61K7/06

CPC分类号： A61K8/044 ,  A61K8/29 ,  A61K33/24 ,  A61K2800/412 ,  A61Q5/00

摘要： Provide a micro-dispersion water of super-fine titanium-group metal particles offering hair-repairing effects, as well as its production method and apparatus. Efficiently produce a concentration-adjustable water solution of super-fine titanium-group metal particles using a highly safe, compact production apparatus that comprises a power supply for high-voltage/current discharge, a titanium-group metal electrode feeder, an electrode-vibrating/sliding device, a high-voltage discharge generator equipped with a titanium-group metal electrode and a counter electrode, a water tank, a water inlet to the water tank, and an outlet for generated water solution of super-fine titanium-group particles, wherein plasma discharge is caused between the titanium-group metal electrode and counter electrode in water to let ion vapor of titanium-group metal contact and dissolve in water.

摘要翻译： 提供提供毛发修复效果的超细钛族金属微粒的微分散水及其制备方法和装置。 使用高度安全，紧凑的生产设备有效地生产超细钛族金属颗粒的浓度可调的水溶液，其包括用于高压/电流放电的电源，钛族金属电极馈电器，电极振动 滑动装置，配备钛族金属电极和对电极的高压放电发生器，水箱，水箱的入水口，以及超细钛族粒子的产生水溶液的出口 其中在钛族金属电极和对电极之间在水中引起等离子体放电，使钛族金属的离子蒸气接触并溶解在水中。

公开(公告)号：US20050005539A1

公开(公告)日：2005-01-13

申请号：US10883937

申请日：2004-07-02

申请人： Hiroshi Nakamura ,  Kazuaki Suzuki ,  Yasuhiro Nakata ,  Takashi Shirai

发明人： Hiroshi Nakamura ,  Kazuaki Suzuki ,  Yasuhiro Nakata ,  Takashi Shirai

IPC分类号： E04H9/02 ,  F16F7/00 ,  E04B2/00

CPC分类号： F16F7/00 ,  E04H9/028 ,  F16F2224/025 ,  F16F2230/16

摘要： A damping brace having an axial force member for providing bearing forces against tensile or compressive forces, a constraining member for constraining the axial force member, and a stiffening part for supplementing the stiffness of the axial force member. An adhesion preventive coating is provided for preventing adhesion between the constraining member and the stiffening part. A length of the stiffening part extending along the axial direction and the gap between the stiffening part and the constraining member are defined in such a way as to prevent an end of the axial force member from rotating in the axial direction beyond a specific angle when the compressive force is applied to the force member.

摘要翻译： 一种阻尼支架，其具有用于提供抵抗拉伸或压缩力的轴承力的轴向力构件，用于约束轴向力构件的约束构件，以及用于补充轴向力构件的刚度的加强构件。 为防止约束构件与加强部之间的粘合，设置防粘附层。 沿着轴向方向延伸的加强部分的长度和加强部分和约束部件之间的间隙被限定为防止轴向力部件的端部在轴向上旋转超过特定角度，当 对力部件施加压缩力。

公开(公告)号：US06768124B2

公开(公告)日：2004-07-27

申请号：US09828300

申请日：2001-04-06

申请人： Kazuaki Suzuki ,  Mikio Ushijima

发明人： Kazuaki Suzuki ,  Mikio Ushijima

IPC分类号： G03F900

CPC分类号： G03F7/70775 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7026 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/31794

摘要： Due to its lack of appreciable thickness, the reticle used in charged-particle-beam (CPB) microlithography is prone to bending and flexing, causing instability in reticle axial height position relative to the projection-lens system, with consequent errors in image focus, rotation and magnification. Apparatus and methods are disclosed for monitoring changes in axial height position of the reticle, to facilitate making compensatory changes. Representative apparatus include a device for detecting the axial height position of the reticle. The device produces one or more beams of light (IR to visible) to strike the reticle at an oblique angle of incidence, detects light reflected from the reticle surface, and detects lateral shifts of the reflected light as received by a height detector. Hence, reticle focus is detected easily and in real time. Multiple detection beams can be used, thereby allowing detection of both axial height position and inclination of the reticle with high accuracy. Reticle-position data can be used to regulate one or more parameters of exposure and/or axial position of the reticle or wafer.

摘要翻译： 由于其缺乏可观的厚度，用于带电粒子束（CPB）微光刻的掩模版易于弯曲和弯曲，导致相对于投影透镜系统的标线轴高度位置不稳定，导致图像聚焦的误差， 旋转和放大。 公开了用于监测标线的轴向高度位置变化的装置和方法，以便于进行补偿性变化。 代表性装置包括用于检测掩模版的轴向高度位置的装置。 该装置产生一个或多个光束（IR到可见）以倾斜的入射角撞击光罩，检测从标线片表面反射的光，并且检测由高度检测器接收的反射光的横向偏移。 因此，准确地检测到掩模版焦点。 可以使用多个检测光束，从而能够高精度地检测光罩的轴向高度位置和倾斜度。 标线片位置数据可用于调节掩模版或晶片的曝光和/或轴向位置的一个或多个参数。

公开(公告)号：US06618119B2

公开(公告)日：2003-09-09

申请号：US09899137

申请日：2001-07-06

申请人： Kazuaki Suzuki

发明人： Kazuaki Suzuki

IPC分类号： G03B2742

CPC分类号： G03F7/70691 ,  G03F7/70241 ,  G03F7/70358 ,  G03F9/70

摘要： A scanning exposure method includes relatively moving a mask and an illuminated area of an exposure beam during a scanning exposure, an image of a pattern of said mask being projected onto a substrate through a projection system; and performing, during the scanning exposure, an imaging adjustment in order to compensate for change of the image projected onto the substrate that would be caused by a scanning error of the mask, the scanning error causing a positional variation of a pattern surface of the mask along an axis of the projection system.

摘要翻译： 扫描曝光方法包括在扫描曝光期间相对移动掩模和曝光光束的照明区域，所述掩模的图案的图像通过投影系统投影到基板上; 并且在扫描曝光期间执行成像调整以补偿投影到由基板的扫描误差引起的基板上的图像的变化，导致掩模的图案表面的位置变化的扫描误差 沿着投影系统的轴线。

公开(公告)号：US06232051B1

公开(公告)日：2001-05-15

申请号：US09124217

申请日：1998-07-29

申请人： Kazuaki Suzuki

发明人： Kazuaki Suzuki

IPC分类号： G03F720

CPC分类号： G03F7/70066 ,  G03F7/2022 ,  G03F7/203 ,  G03F7/70433

摘要： The resist to be used for the method of this invention in producing a semiconductor device is patterned by a procedure which comprises the steps of disposing in the direction of a semiconductor wafer a first mask having circuit patterns repeatedly formed at a plurality of positions, then shielding those of said plurality of circuit patterns which overlap the edge of the semiconductor wafer with a blind to an extent such that the remaining circuit patterns are not shielded, exposing a resist overlying the semiconductor wafer by using the first mask held in a state partially shielded by the blind, projecting light through a second mask provided with a light passing pattern defined by a shielding film to an area of the resist to which the edge of the blind is transferred, and developing the resist

摘要翻译： 用于本发明制造半导体器件的方法的抗蚀剂通过以下步骤构图，该方法包括以下步骤：在半导体晶片的方向上布置具有在多个位置上重复形成的电路图案的第一掩模，然后屏蔽 所述多个电路图案的那些电路图案与半导体晶片的边缘重叠一定程度，使得剩余的电路图案不被屏蔽，通过使用保持在部分屏蔽的状态的第一掩模暴露覆盖半导体晶片的抗蚀剂 通过设置有由屏蔽膜限定的光通过图案的第二掩模将盲光投影到被转印边缘的抗蚀剂区域，并且显影抗蚀剂

公开(公告)号：US5089404A

公开(公告)日：1992-02-18

申请号：US261162

申请日：1988-10-21

申请人： Wataru Matsumoto ,  Eiji Nakai ,  Toru Nezu ,  Kazuaki Suzuki

发明人： Wataru Matsumoto ,  Eiji Nakai ,  Toru Nezu ,  Kazuaki Suzuki

IPC分类号： C11C3/10 ,  C12P7/64

CPC分类号： C12P7/6454 ,  Y10S435/822 ,  Y10S435/829 ,  Y10S435/921 ,  Y10S435/931 ,  Y10S435/939

摘要： A process for the transesterification of substrates comprising (a) fat and oil and (b) one or more compounds selected from the group consisting of fatty acid, fatty acid ester and other fat and oil with the use of a lipase, wherein said transesterification is effected in the presence of a monohydric lower alcohol.

公开(公告)号：US4970546A

公开(公告)日：1990-11-13

申请号：US333010

申请日：1989-04-04

申请人： Kazuaki Suzuki ,  Akikazu Tanimoto ,  Masato Go

发明人： Kazuaki Suzuki ,  Akikazu Tanimoto ,  Masato Go

IPC分类号： B23K26/06 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01S3/097 ,  H01S3/136

CPC分类号： G03F7/70583 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  G03F7/70058

摘要： A simple illumination control device provides illuminating light with improved uniformity in intensity and without speckle fringes.A speckle pattern, formed with a specific periodicity by the irradiation of a pulse on a first object or a second object, is moved within a predetermined range at least in one direction. The minimum number of pulses required for substantially smoothing the speckle pattern on the second object by irradiation of plural pulses during the movement of the speckle pattern over the predetermined range, is stored. Based on the minimum number of pulses, the number of pulses required for obtaining desired exposure, the amount of light of each pulse, and the number of pulses for moving the speckle pattern substantially by a cycle, are determined.

摘要翻译： 简单的照明控制装置提供具有改善的强度均匀性并且没有斑点条纹的照明光。 通过在第一物体或第二物体上照射脉冲而具有特定周期性的散斑图案至少在一个方向上在预定范围内移动。 存储了在斑点图案移动超过预定范围时通过照射多个脉冲来基本上平滑第二物体上的散斑图案所需的最小脉冲数。 基于最小脉冲数，确定获得所需曝光所需的脉冲数，每个脉冲的光量以及基本上以周期移动散斑图案的脉冲数。

公开(公告)号：US4855799A

公开(公告)日：1989-08-08

申请号：US136767

申请日：1987-12-22

申请人： Hirohito Tanabe ,  Yu Ohata ,  Kazuaki Suzuki ,  Yukiharu Miwa ,  Yoshihito Nakayama

发明人： Hirohito Tanabe ,  Yu Ohata ,  Kazuaki Suzuki ,  Yukiharu Miwa ,  Yoshihito Nakayama

IPC分类号： H01L21/22 ,  H01L21/336 ,  H01L29/167 ,  H01L29/45 ,  H01L29/78

CPC分类号： H01L29/66712 ,  H01L21/221 ,  H01L29/167 ,  H01L29/7805 ,  H01L29/7813 ,  H01L29/4236 ,  H01L29/456

摘要： In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree. C.

摘要翻译： 在功率MOS FET和制造这种FET的方法中，其中具有小电阻率补偿效应的诸如铂的材料作为寿命抑制剂扩散到由漏极区域和基极形成的PN二极管结附近 地区。 通过形成在覆盖绝缘体层中的开口进行扩散。 寿命杀手的一个例子是铂，扩散铂的优选温度范围不高于900℃。

公开(公告)号：US4777149A

公开(公告)日：1988-10-11

申请号：US136770

申请日：1987-12-22

申请人： Hirohito Tanabe ,  Yu Ohata ,  Kazuaki Suzuki ,  Yukiharu Miwa ,  Yoshihito Nakayama

发明人： Hirohito Tanabe ,  Yu Ohata ,  Kazuaki Suzuki ,  Yukiharu Miwa ,  Yoshihito Nakayama

IPC分类号： H01L21/336 ,  H01L29/167 ,  H01L29/78 ,  H01L21/383

CPC分类号： H01L29/66712 ,  H01L21/221 ,  H01L29/167 ,  H01L29/66734 ,  H01L29/7805 ,  H01L29/7813 ,  H01L29/4236 ,  H01L29/456 ,  Y10S438/904

摘要： In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.

摘要翻译： 在功率MOS FET和制造这种FET的方法中，其中具有小电阻率补偿效应的诸如铂的材料作为寿命抑制剂扩散到由漏极区域和基极形成的PN二极管结附近 地区。 通过形成在覆盖绝缘体层中的开口进行扩散。 寿命杀手的一个例子是铂，扩散铂的优选温度范围不高于900℃。