公开(公告)号：US06923885B2

公开(公告)日：2005-08-02

申请号：US10732286

申请日：2003-12-11

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

摘要翻译： 一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔 气体通过该气体流入真空室。 光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

公开(公告)号：US06755932B2

公开(公告)日：2004-06-29

申请号：US09788463

申请日：2001-02-21

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H05H100

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.

摘要翻译： 本发明的目的是提供一种等离子体处理装置，其中在处理室中产生等离子体以处理样品。 所述等离子体处理装置的特征还在于，在安装在与样品相对布置的UHF天线上的板上形成多个紧密堆积的通孔，光发射器几乎与通孔背面几乎接触，并且 光传输装置设置在所述光发射机的另一端，借助于测量仪器通过光发射机和光传输装置测量来自样本和等离子体的光信息。 即使在长期放电过程中也不会对通孔发生异常放电或颗粒污染，并且在光发射机的端面处的光学性能不会劣化。 所述等离子体处理装置长时间保证对样品和等离子体表面的状态的稳定和高精度的测量。

公开(公告)号：US06503364B1

公开(公告)日：2003-01-07

申请号：US09651720

申请日：2000-08-30

申请人： Toshio Masuda ,  Tatehito Usui ,  Shigeru Shirayone ,  Kazue Takahashi ,  Mitsuru Suehiro

发明人： Toshio Masuda ,  Tatehito Usui ,  Shigeru Shirayone ,  Kazue Takahashi ,  Mitsuru Suehiro

IPC分类号： C23C1600

CPC分类号： H01J37/32935 ,  H01J37/32009 ,  H01J37/32972

摘要： In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magnetic field generator installed around the processing chamber, a hollow tube having one end in communication with an opening in the side wall of the processing chamber and another end, outside the processing chamber, which has a measuring window of plasma optical emission. By setting the lines of force of the magnetic field formed by the magnetic field generator so as to form an angle relative to the hollow tube, entry of plasma into the hollow tube can be prevented, and adhesion of deposits onto the measuring window can be suppressed, whereby the transmission factor of the measuring window can be kept constant over a long period of use.

摘要翻译： 在处理室中产生等离子体的等离子体处理装置中，通过从安装在处理室中的UHF带状天线辐射的电磁波的相互作用和由设置在处理室周围的磁场发生部形成的磁场进行相互作用来处理晶片， 中空管具有与处理室的侧壁中的开口连通的一端，以及具有等离子体光发射测量窗的处理室外的另一端。 通过设置由磁场发生器形成的磁场的力线以相对于中空管形成一个角度，可以防止等离子体进入中空管，并且可以抑制沉积物粘附到测量窗口上 由此，可以在长时间使用时测量窗口的透射系数保持恒定。

公开(公告)号：US06506686B2

公开(公告)日：2003-01-14

申请号：US09790702

申请日：2001-02-23

申请人： Toshio Masuda ,  Kazue Takahashi ,  Ryoji Fukuyama ,  Tomoyuki Tamura

发明人： Toshio Masuda ,  Kazue Takahashi ,  Ryoji Fukuyama ,  Tomoyuki Tamura

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/3266 ,  H01J37/32697

摘要： In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100 to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

摘要翻译： 在具有真空室的等离子体处理装置中，向处理室供给气体的处理气体供给单元，将真空室内的样品保持的电极，安装在与所述样品相对的所述真空室内的等离子体发生器， 真空排气系统减小所述真空室的压力，施加Vdc = -300至-50V的偏置电压，并且所述板的表面温度为100至200℃。此外，硅的表面温度波动 所述等离子体处理装置中制成的板保持在±25℃

公开(公告)号：US07491868B2

公开(公告)日：2009-02-17

申请号：US11568295

申请日：2005-04-20

申请人： Kazue Takahashi ,  R. Alan Ezekowitz ,  Lei Shi

发明人： Kazue Takahashi ,  R. Alan Ezekowitz ,  Lei Shi

IPC分类号： A01K67/027 ,  A01K67/00 ,  A01K67/033 ,  C12N15/00

CPC分类号： A01K67/0276 ,  A01K2217/075 ,  A01K2227/105 ,  A01K2267/03 ,  C07K16/18 ,  C07K2317/77

摘要： A transgenic non-human animal with alterations in the MBL gene is prepared by introduction of a gene encoding an altered MBL protein into a host non-human animal. Methods for using transgenic mice so generated to screen for agents that effect MBL's cellular modulating activity are also provided.

摘要翻译： 通过将编码改变的MBL蛋白质的基因导入宿主非人动物来制备具有MBL基因改变的转基因非人动物。 还提供了使用如此产生的转基因小鼠筛选影响MBL细胞调节活性的试剂的方法。

公开(公告)号：US20060060300A1

公开(公告)日：2006-03-23

申请号：US11274321

申请日：2005-11-16

申请人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

发明人： Kazue Takahashi ,  Saburo Kanai ,  Yoshiaki Satou ,  Takazumi Ishizu

IPC分类号： H01L21/306

CPC分类号： C23F4/00 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3322 ,  H01L21/32136 ,  H01L21/6875

摘要： A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

公开(公告)号：US20060000800A1

公开(公告)日：2006-01-05

申请号：US11213770

申请日：2005-08-30

申请人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

发明人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： H01L22/34 ,  C23C16/50 ,  C23C16/52 ,  G01N21/73 ,  H01J37/32935 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

摘要： A sample processing method for processing a sample by introducing a gas into a vacuum vessel and generating plasma in the vacuum vessel. The sample processing method includes the steps of measuring an intensity of light emitted from a light-emitting diode in the vacuum vessel, at the outside of the vacuum vessel, and monitoring a status of the plasma in accordance with the measured intensity of the light.

摘要翻译： 一种用于通过将气体引入真空容器并在真空容器中产生等离子体来处理样品的样品处理方法。 样品处理方法包括以下步骤：测量从真空容器中的发光二极管在真空容器的外部发射的光的强度，并根据所测量的光强度监测等离子体的状态。

公开(公告)号：US06867144B2

公开(公告)日：2005-03-15

申请号：US10138635

申请日：2002-05-06

申请人： Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

发明人： Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/302

CPC分类号： H01J37/32706

摘要： A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.

摘要翻译： 晶片的等离子体蚀刻方法包括以下步骤：将具有栅极氧化膜的晶片静电吸引到真空处理室中的晶片安装电极上，基于蚀刻配方将混合气体引入真空处理室，产生 真空处理室内部的磁场，在真空处理室内产生等离子体，向晶片施加偏置功率，将等离子体中的离子加速朝向晶片，将晶片安装电极的一部分的阻抗设定为对应于 从晶片安装电极的晶片安装电极的对应于晶片外周的位置的晶片安装电极的晶片安装电极的中心部分的角度看，晶片的外周是从偏压电源观察到的值 并形成在用于静电吸引晶片的绝缘膜下。

公开(公告)号：US06235146B1

公开(公告)日：2001-05-22

申请号：US09313253

申请日：1999-05-18

申请人： Masanori Kadotani ,  Saburo Kanai ,  Youichi Itou ,  Takashi Fujii ,  Hironobu Kawahara ,  Ryouji Hamasaki ,  Kazue Takahashi ,  Motohiko Yoshigai

发明人： Masanori Kadotani ,  Saburo Kanai ,  Youichi Itou ,  Takashi Fujii ,  Hironobu Kawahara ,  Ryouji Hamasaki ,  Kazue Takahashi ,  Motohiko Yoshigai

IPC分类号： H01L2100

CPC分类号： H01L21/67023 ,  H01J2237/2001 ,  Y10S156/914

摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.

摘要翻译： 具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。 在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成 或者在电极部件上形成钛合金和静电吸引用的电介质膜。 为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

公开(公告)号：US06217705B1

公开(公告)日：2001-04-17

申请号：US09478992

申请日：2000-01-07

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshitumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshitumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H05H100

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： A substrate holding system is provided for holding a substrate in a substrate etching apparatus by using electrostatic force. An electrical insulating member is also provided having a top surface approximately at the same level as the treated surface of the substrate and having an inner side surface in adjacent relationship with a surface of the substrate forming the periphery of the substrate. The inner side surface of the electrical insulating member faces the periphery of the substrate in substantially parallel relationship with a direction normal to the treated surface of the substrate. A dielectric film is formed on one surface of a metallic member having a flow passage for circulating a coolant to control the temperature of the substrate. An electrically insulating material member is placed on and in contact with a surface of the metallic member. An electrically conductive material member grounded to a standard electric potential is placed on and in contact with a surface of the electrically insulating material member. Three kinds of members are overlaid and fixed to each other in order of the metallic member having the dielectric film, the electrically insulating material member and the standard electric potential member. A coolant hole penetrates from the standard electric potential member side to the coolant flow passage of the metallic member being formed, at least three through holes penetrating the three kinds of members being formed and movable members linked to a substrate transporting mechanism being inserted in the through holes.

摘要翻译： 提供了通过使用静电力将基板保持在基板蚀刻装置中的基板保持系统。 还提供一种电绝缘构件，其具有与基板的处理表面大致相同水平面的顶表面，并且具有与形成基板周边的基板的表面相邻的内侧表面。 电绝缘构件的内侧表面基本上与基板的被处理表面垂直的方向平行。 在具有用于循环冷却剂的流路的金属构件的一个表面上形成电介质膜以控制衬底的温度。 电绝缘材料构件放置在金属构件的表面上并与金属构件的表面接触。 接地到标准电位的导电材料构件放置在电绝缘材料构件的表面上并与电绝缘材料构件的表面接触。 按照具有电介质膜的金属构件，电绝缘材料构件和标准电位构件的顺序将三种构件重叠并固定。 冷却剂孔从标准电位部件侧穿过形成的金属部件的冷却剂流路，至少形成贯通形成有三个部件的3个贯通孔，与基板传送机构连结的可动部件插入贯通孔 孔。