-
公开(公告)号：US20130220212A1
公开(公告)日：2013-08-29
申请号：US13883350
申请日：2011-11-04
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuchiro Okada , Katsunori Danno , Hironori Daikoku
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuchiro Okada , Katsunori Danno , Hironori Daikoku
摘要： A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
摘要翻译： 制造n型SiC单晶的方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。 一种方法包括以下步骤：提供一种制造装置（100），该制造装置（100）包括具有坩埚（7）将被设置的区域的腔室（1） 加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在排气之后用包含惰性气体和氮气的混合气体填充室（1）; 加热和熔化容纳在所述区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。
-
公开(公告)号：US07635413B2
公开(公告)日：2009-12-22
申请号：US11712841
申请日：2007-03-01
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
CPC分类号： C30B9/06 , C30B9/10 , C30B15/305 , C30B17/00 , C30B19/02 , C30B19/04 , C30B29/36 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1072
摘要： A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
摘要翻译： 通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长 通过逐渐冷却溶液或通过在其中提供温度梯度来制备。 对于这种方法，通过反复加速到规定的转速并以该速度保持并减速到较低的转速或0转速来施加坩埚的加速旋转。 坩埚的旋转方向可以反转每个加速度。 种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。 以高的晶体生长速率生产不含夹杂物的大质量好的单晶。
-
公开(公告)号：US20070209573A1
公开(公告)日：2007-09-13
申请号：US11712841
申请日：2007-03-01
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
CPC分类号： C30B9/06 , C30B9/10 , C30B15/305 , C30B17/00 , C30B19/02 , C30B19/04 , C30B29/36 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1072
摘要： A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
摘要翻译： 通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长 通过逐渐冷却溶液或通过在其中提供温度梯度来制备。 对于这种方法，通过反复加速到规定的转速并以该速度保持并且减速到较低的转速或0转速来施加坩埚的加速旋转。 坩埚的旋转方向可以反转每个加速度。 种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。 以高的晶体生长速率生产不含夹杂物的大质量好的单晶。
-
公开(公告)号：US09222198B2
公开(公告)日：2015-12-29
申请号：US13385566
申请日：2012-02-27
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/062 , Y10T428/21 , Y10T428/265
摘要： A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.
摘要翻译： 通过抑制从晶片产生的缺陷可以生长出其质量良好的外延膜的SiC单晶晶片具有厚度至多为50nm的受影响的表面层和氧含量至多为1.0×x的SiC单晶部分 1017原子/ cm3。 该SiC单晶晶片由使用氧含量为100ppm以下的原料和氧浓度为100ppm以下的非氧化性气氛的溶液生长法得到的高纯度SiC体单晶制造。
-
公开(公告)号：US08388752B2
公开(公告)日：2013-03-05
申请号：US13036101
申请日：2011-02-28
IPC分类号： C30B9/00
摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
摘要翻译： 一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于 使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50
-
公开(公告)号：US08492774B2
公开(公告)日：2013-07-23
申请号：US13033767
申请日：2011-02-24
IPC分类号： H01L29/15
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/10 , Y10T117/1024
摘要： A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10−3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
摘要翻译： 一种SiC单晶膜的制造方法，其通过LPE法在熔体溶剂中使用SiC溶液，使具有低掺杂浓度的SiC外延膜在直径至少为2英寸的基板上稳定地生长，其包括抽真空 在将熔体原料引入炉内之前，将晶体生长炉的内部加热抽真空直到晶体生长温度下的真空压力为5×10 -3 Pa以下的步骤。 然后，将含有熔体原料的坩埚引入炉内，形成SiC溶液，在沉积在溶液中的基板上生长SiC外延膜。
-
公开(公告)号：US20120211769A1
公开(公告)日：2012-08-23
申请号：US13385566
申请日：2012-02-27
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/062 , Y10T428/21 , Y10T428/265
摘要： A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.
摘要翻译： 通过抑制从晶片产生的缺陷可以生长出其质量良好的外延膜的SiC单晶晶片具有厚度至多为50nm的受影响的表面层和氧含量至多为1.0×x的SiC单晶部分 1017原子/ cm3。 该SiC单晶晶片由使用氧含量为100ppm以下的原料和氧浓度为100ppm以下的非氧化性气氛的溶液生长法得到的高纯度SiC体单晶制造。
-
公开(公告)号：US20110200833A1
公开(公告)日：2011-08-18
申请号：US13036101
申请日：2011-02-28
摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
摘要翻译： 一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于 使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50
-
公开(公告)号：US20110198614A1
公开(公告)日：2011-08-18
申请号：US13033767
申请日：2011-02-24
IPC分类号： H01L29/161 , C30B19/04 , C30B19/06 , C30B19/12
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/10 , Y10T117/1024
摘要： A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10−3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
摘要翻译： 一种SiC单晶膜的制造方法，其通过LPE法在熔体溶剂中使用SiC溶液，使具有低掺杂浓度的SiC外延膜在直径至少为2英寸的基板上稳定地生长，其包括抽真空 在将熔体原料引入炉内之前，将晶体生长炉的内部加热抽真空直到晶体生长温度下的真空压力为5×10 -3 Pa以下的步骤。 然后，将含有熔体原料的坩埚引入炉内，形成SiC溶液，在沉积在溶液中的基板上生长SiC外延膜。
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.034 秒)
