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公开(公告)号:US20060152693A1
公开(公告)日:2006-07-13
申请号:US11294727
申请日:2005-12-06
申请人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
发明人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
IPC分类号: G03B27/52
CPC分类号: G03F7/70991 , H01L21/67051 , H01L21/67173 , H01L21/67178
摘要: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a processing block for liquid immersion exposure processing, and an interface block. An exposure device is arranged adjacent to the interface block. The processing block for liquid immersion exposure processing comprises a coating processing group for resist cover film and a removal processing group for resist cover film. The resist cover film is formed in the processing block for liquid immersion exposure processing before the exposure processing. The resist cover film is removed in the processing block for liquid immersion exposure processing after the exposure processing.
摘要翻译: 基板处理装置包括分度器块,抗反射膜处理块,抗蚀剂膜处理块,显影处理块,用于液浸曝光处理的处理块和界面块。 曝光装置设置在接口块附近。 用于液浸曝光处理的处理块包括用于抗蚀剂覆盖膜的涂覆处理组和抗蚀剂覆盖膜的去除处理组。 在曝光处理之前,在用于液浸曝光处理的处理块中形成抗蚀剂覆盖膜。 在曝光处理之后,在用于液浸曝光处理的处理块中去除抗蚀剂覆盖膜。
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公开(公告)号:US08932672B2
公开(公告)日:2015-01-13
申请号:US12628120
申请日:2009-11-30
申请人: Koji Kaneyama , Masashi Kanaoka , Tadashi Miyagi , Kazuhito Shigemori , Shuichi Yasuda , Tetsuya Hamada
发明人: Koji Kaneyama , Masashi Kanaoka , Tadashi Miyagi , Kazuhito Shigemori , Shuichi Yasuda , Tetsuya Hamada
IPC分类号: B05D3/12 , B08B1/00 , B08B1/04 , B08B3/04 , G11B5/84 , G03F7/16 , G03F7/20 , H01L21/67 , G11B7/26
CPC分类号: G03F7/70925 , G03F7/168 , G03F7/7075 , G03F7/70916 , G03F7/70991 , G11B5/8404 , G11B7/261 , H01L21/67051 , H01L21/67225 , Y10S134/902
摘要: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.
摘要翻译: 基板处理装置包括分度器块,抗反射膜处理块,抗蚀剂膜处理块,显影处理块,抗蚀剂覆盖膜处理块,抗蚀剂覆盖膜去除块,清洁/干燥处理块,以及 一个接口块。 曝光装置被布置成与基板处理装置中的界面块相邻。 曝光装置通过浸渍方法使基板进行曝光处理。 在清洁/干燥处理块的边缘清洁单元中,刷子抵靠旋转基板的一端,从而清洁曝光处理之前的基板的边缘。 此时,校正基板被清洁的位置。
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公开(公告)号:US20100285225A1
公开(公告)日:2010-11-11
申请号:US12842485
申请日:2010-07-23
IPC分类号: B05D3/04
CPC分类号: H01L21/67051 , H01L21/67225
摘要: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes first and second cleaning/drying processing units. A substrate W is subjected to cleaning and drying processing before exposure processing in the first cleaning/drying processing unit, while being subjected to cleaning and drying processing after the exposure processing in the second cleaning/drying processing unit.
摘要翻译: 基板处理装置包括接口块。 曝光装置设置在接口块附近。 界面块包括第一和第二清洁/干燥处理单元。 在第二清洗/干燥处理单元中进行曝光处理之后进行清洗和干燥处理之后,在第一清洗/干燥处理单元中对基板W进行曝光处理之前的清洗和干燥处理。
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公开(公告)号:US20100159142A1
公开(公告)日:2010-06-24
申请号:US12719788
申请日:2010-03-08
申请人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Akihiro Hisai , Hiroshi Kobayashi , Tsuyoshi Okumura
发明人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Akihiro Hisai , Hiroshi Kobayashi , Tsuyoshi Okumura
IPC分类号: B05D3/00
CPC分类号: G03F7/70991 , G03F7/7075 , Y10S438/906 , Y10S438/908
摘要: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The interface block comprises washing processing units and an interface transport mechanism. Before a substrate is subjected to exposure processing by the exposure device, the substrate is transported to a washing processing unit by the interface transport mechanism. The substrate is washed and dried by the washing processing unit.
摘要翻译: 基板处理装置包括分度器块,抗反射膜处理块,抗蚀剂膜处理块,显影处理块和界面块。 曝光装置设置在接口块附近。 接口块包括洗涤处理单元和接口传送机构。 在通过曝光装置对基板进行曝光处理之前,通过界面传送机构将基板输送到洗涤处理单元。 洗涤基体并通过洗涤处理单元干燥。
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公开(公告)号:US20100136257A1
公开(公告)日:2010-06-03
申请号:US12698862
申请日:2010-02-02
申请人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
发明人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
IPC分类号: B05D3/06
CPC分类号: G03F7/30 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67178 , H01L21/67225
摘要: A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes forming a photosensitive film on the substrate by said first processing unit before exposure processing by said exposure device and applying washing processing to the substrate by supplying a washing liquid to the substrate in said second processing unit after the formation of said photosensitive film and before the exposure processing. The method also includes applying drying processing to the substrate in said second processing unit after the washing processing by said second processing unit and before the exposure processing and applying development processing to the substrate by said third processing unit after the exposure processing. Applying the drying processing to the substrate includes the step of supplying an inert gas onto the substrate, to which the washing liquid is supplied.
摘要翻译: 一种在与曝光装置相邻并且包括第一,第二和第三处理单元的基板处理装置中处理基板的方法,包括在所述曝光装置的曝光处理之前由所述第一处理单元在所述基板上形成感光膜,以及 在形成所述感光膜之后并且在所述曝光处理之前,通过在所述第二处理单元中向所述基板供应洗涤液体来向所述基板施加洗涤处理。 该方法还包括在所述第二处理单元的洗涤处理之后并且在曝光处理之前对所述第二处理单元中的基板进行干燥处理,并且在曝光处理之后,通过所述第三处理单元对基板进行显影处理。 将干燥处理应用于基板包括向供给洗涤液的基板供给惰性气体的工序。
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公开(公告)号:US20100075054A1
公开(公告)日:2010-03-25
申请号:US12628120
申请日:2009-11-30
申请人: Koji Kaneyama , Masashi Kanaoka , Tadashi Miyagi , Kazuhito Shigemori , Shuichi Yasuda , Tetsuya Hamada
发明人: Koji Kaneyama , Masashi Kanaoka , Tadashi Miyagi , Kazuhito Shigemori , Shuichi Yasuda , Tetsuya Hamada
IPC分类号: B05D3/00
CPC分类号: G03F7/70925 , G03F7/168 , G03F7/7075 , G03F7/70916 , G03F7/70991 , G11B5/8404 , G11B7/261 , H01L21/67051 , H01L21/67225 , Y10S134/902
摘要: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.
摘要翻译: 基板处理装置包括分度器块,抗反射膜处理块,抗蚀剂膜处理块,显影处理块,抗蚀剂覆盖膜处理块,抗蚀剂覆盖膜去除块,清洁/干燥处理块,以及 一个接口块。 曝光装置被布置成与基板处理装置中的界面块相邻。 曝光装置通过浸渍方法使基板进行曝光处理。 在清洁/干燥处理块的边缘清洁单元中,刷子抵靠旋转基板的一端,从而清洁曝光处理之前的基板的边缘。 此时,校正基板被清洁的位置。
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公开(公告)号:US20080016714A1
公开(公告)日:2008-01-24
申请号:US11782352
申请日:2007-07-24
IPC分类号: F26B5/08 , H01L21/677
CPC分类号: H01L21/67051 , H01L21/67225
摘要: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes first and second cleaning/drying processing units. A substrate W is subjected to cleaning and drying processing before exposure processing in the first cleaning/drying processing unit, while being subjected to cleaning and drying processing after the exposure processing in the second cleaning/drying processing unit.
摘要翻译: 基板处理装置包括接口块。 曝光装置设置在接口块附近。 界面块包括第一和第二清洁/干燥处理单元。 在第二清洗/干燥处理单元中进行曝光处理之后进行清洗和干燥处理之后,在第一清洗/干燥处理单元中对基板W进行曝光处理之前的清洗和干燥处理。
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公开(公告)号:US20060152694A1
公开(公告)日:2006-07-13
申请号:US11295216
申请日:2005-12-06
申请人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
发明人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
IPC分类号: G03B27/32
CPC分类号: G03F7/30 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67178 , H01L21/67225
摘要: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a washing processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The washing processing block comprises washing processing group. A resist film is formed in the resist film processing block. Before the substrate is subjected to exposure processing by the exposure device, the substrate is subjected to washing and drying processing in the washing processing group.
摘要翻译: 基板处理装置包括分度器块,抗反射膜处理块,抗蚀剂膜处理块,显影处理块,洗涤处理块和接口块。 曝光装置设置在接口块附近。 洗涤处理块包括洗涤处理组。 在抗蚀剂膜处理块中形成抗蚀剂膜。 在通过曝光装置对基板进行曝光处理之前,在洗涤处理组中对基板进行洗涤和干燥处理。
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公开(公告)号:US08356424B2
公开(公告)日:2013-01-22
申请号:US12842485
申请日:2010-07-23
IPC分类号: B05D3/04
CPC分类号: H01L21/67051 , H01L21/67225
摘要: A substrate processing method comprises the step of subjecting a substrate to drying processing in at least one of a processing section and an interface, wherein the step of subjecting the substrate to the drying processing comprises the steps of: rotating the substrate at a first rotational speed around an axis perpendicular to the substrate, while holding the substrate horizontally, forming a liquid layer on the substrate in a state where the substrate is rotated at the first rotational speed, gradually and continuously increasing the rotational speed of the substrate to a second rotational speed after the formation of the liquid layer, and starting discharging a gas to the liquid layer on the substrate while the substrate is rotated at the second rotational speed.
摘要翻译: 基板处理方法包括以下步骤:对基板进行处理部和界面中的至少一个的干燥处理,其中对基板进行干燥处理的步骤包括以下步骤:以第一转速旋转基板 围绕垂直于基板的轴线,同时水平地保持基板,在基板以第一转速旋转的状态下在基板上形成液体层,逐渐且连续地将基板的旋转速度提高到第二转速 在形成液体层之后,并且在基板以第二旋转速度旋转的同时开始将气体排放到基板上的液体层。
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公开(公告)号:US08040488B2
公开(公告)日:2011-10-18
申请号:US11294727
申请日:2005-12-06
申请人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
发明人: Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
CPC分类号: G03F7/70991 , H01L21/67051 , H01L21/67173 , H01L21/67178
摘要: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a processing block for liquid immersion exposure processing, and an interface block. An exposure device is arranged adjacent to the interface block. The processing block for liquid immersion exposure processing comprises a coating processing group for resist cover film and a removal processing group for resist cover film. The resist cover film is formed in the processing block for liquid immersion exposure processing before the exposure processing. The resist cover film is removed in the processing block for liquid immersion exposure processing after the exposure processing.
摘要翻译: 基板处理装置包括分度器块,抗反射膜处理块,抗蚀剂膜处理块,显影处理块,用于液浸曝光处理的处理块和界面块。 曝光装置设置在接口块附近。 用于液浸曝光处理的处理块包括用于抗蚀剂覆盖膜的涂覆处理组和抗蚀剂覆盖膜的去除处理组。 在曝光处理之前,在用于液浸曝光处理的处理块中形成抗蚀剂覆盖膜。 在曝光处理之后,在用于液浸曝光处理的处理块中去除抗蚀剂覆盖膜。
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