摘要:
A memory device has a global input/output line pair configured for data transfer. The memory device includes a sense amplifier, a detecting unit and a detect control signal generating unit. The sense amplifier is coupled to the global input/output line pair. The detecting unit detects a potential difference between the global input/output line pair. The detect control signal generating unit disables an operation of the sense amplifier and precharges the global input/output line pair to a predetermined voltage. A precharge operation of a memory device may be performed at a higher speed so that a high speed operation of the memory device may be achieved. In addition, the operating time of the sense amplifier may be decreased so that the power consumption of the memory device may be reduced.
摘要:
A duty cycle correction circuit for use in a semiconductor device, which synchronizes with an external clock and corrects a duty cycle, is provided. The duty cycle correction circuit includes a modulator of an inverter structure having at least one or more transistors. The modulator receives a control signal through a source terminal and a bulk of any one of the transistors and corrects a duty cycle in response to an external clock signal. The duty cycle correction circuit also includes a driver that converts an output signal of the modulator into a full swing level and outputs the converted output signal of the modulator, and a feedback loop that generates the control signal in response to an output signal of the driver.
摘要:
A DAC circuit can include a plurality of current source circuits configured to operate responsive to respective different bias voltage signals and respective true and complementary binary digit signals.
摘要:
A memory core of a resistive type memory device includes at least a first resistive type memory cell coupled to a bit-line, a first resistance to voltage converter and a bit-line sense amplifier. The first resistance to voltage converter is coupled to the bit-line at a first node. The first resistance to voltage converter converts a resistance of the first resistive type memory cell to a corresponding voltage based on a read column selection signal. The bit-line sense amplifier is coupled to the bit-line at the first node and is coupled to a complementary bit-line at a second node. The bit-line sense amplifier senses and amplifies a voltage difference of the bit-line and the complementary bit-line in response to a sensing control signal.
摘要:
A self-calibrating temperature sensor and a method thereof are provided. The self-calibrating temperature sensor may include a reference voltage generator to generate a reference voltage based on temperature, a digital-to-analog converter to convert a first digital signal into an analog sensing voltage, a comparator to compare the reference voltage with the analog sensing voltage, and to generate a comparison result signal, a digital signal generator to generate and update the first digital signal based on the comparison result signal, a first storage circuit to store the first digital signal based on a first temperature, a data output unit to output data corresponding to a second temperature based on the first digital signal and a second digital signal output from the first storage circuit.
摘要:
A memory device has a global input/output line pair configured for data transfer. The memory device includes a sense amplifier, a detecting unit and a detect control signal generating unit. The sense amplifier is coupled to the global input/output line pair. The detecting unit detects a potential difference between the global input/output line pair. The detect control signal generating unit disables an operation of the sense amplifier and precharges the global input/output line pair to a predetermined voltage. A precharge operation of a memory device may be performed at a higher speed so that a high speed operation of the memory device may be achieved. In addition, the operating time of the sense amplifier may be decreased so that the power consumption of the memory device may be reduced.
摘要:
A power-on reset circuit and method for the same may provide reset signals during power-up and/or power-down cycles, to reduce the chances of error. An error may occur, for example, due to voltage fluctuations and/or the ambient temperature of circuit components. Reducing the chances of error during a power-up cycle may include setting an output node of a circuit to a reset state when a power supply voltage reaches a first voltage level and outputting a power-on reset signal to the output node when the power supply voltage equals a second voltage level higher than the first. Reducing the chances of error during a power-down cycle may include setting the output node to a reset state when the output node reaches a third voltage level between the first and second voltage levels.
摘要:
A duty cycle correction circuit for use in a semiconductor device, which synchronizes with an external clock and corrects a duty cycle, is provided. The duty cycle correction circuit includes a modulator of an inverter structure having at least one or more transistors. The modulator receives a control signal through a source terminal and a bulk of any one of the transistors and corrects a duty cycle in response to an external clock signal. The duty cycle correction circuit also includes a driver that converts an output signal of the modulator into a full swing level and outputs the converted output signal of the modulator, and a feedback loop that generates the control signal in response to an output signal of the driver.
摘要:
A power-on reset circuit and method for the same may provide reset signals during power-up and/or power-down cycles, to reduce the chances of error. An error may occur, for example, due to voltage fluctuations and/or the ambient temperature of circuit components. Reducing the chances of error during a power-up cycle may include setting an output node of a circuit to a reset state when a power supply voltage reaches a first voltage level and outputting a power-on reset signal to the output node when the power supply voltage equals a second voltage level higher than the first. Reducing the chances of error during a power-down cycle may include setting the output node to a reset state when the output node reaches a third voltage level between the first and second voltage levels.
摘要:
A power-on reset circuit which outputs a power-on reset signal through an output node includes a first signal generator that generates a first signal voltage. The first signal voltage increases from a ground voltage when a power supply voltage reaches a first threshold voltage. A second signal generator generates a second signal voltage, and the second signal voltage decreases from the power supply voltage when the power supply voltage reaches a second threshold voltage. A comparator activates the power-on reset signal responsive to a comparison of the first and second signals.