公开(公告)号：US07616360B2

公开(公告)日：2009-11-10

申请号：US11460466

申请日：2006-07-27

申请人： Ritsuko Otake ,  Shinichi Kato ,  Tsutomu Sakaue ,  Yoko Sato ,  Yoichi Kashibuchi

发明人： Ritsuko Otake ,  Shinichi Kato ,  Tsutomu Sakaue ,  Yoko Sato ,  Yoichi Kashibuchi

IPC分类号： G03F3/08 ,  G06F15/00 ,  G06K9/00

CPC分类号： H04N1/54 ,  H04N1/233 ,  H04N1/2369 ,  H04N1/52

摘要： When color materials of more than four colors are used, a signal for the amount of toner used within a range appropriate for the apparatus and toner characteristic is generated using a color separation table. However, a printer receives print data of various formats, such as image data separated into signal values of more than four colors, or image data of a special format to which a six-color separation table cannot be applied. Hence, an image signal representing a combination of colors is input. The sum of the signal values of colors in each pixel of the image signal is calculated and compared with a limit value. When the sum exceeds the limit value, the signal values of base colors are replaced with that of a spot color based on a replacement table for replacing the signal values of the base colors with that of the spot color.

摘要翻译： 当使用四种颜色的颜色材料时，使用分色台产生在适合于该装置的一定范围内的调色剂量和调色剂特性的信号。 然而，打印机接收各种格式的打印数据，例如分割成四种颜色的信号值的图像数据，或不能应用六色分离表的特殊格式的图像数据。 因此，输入表示颜色的组合的图像信号。 计算图像信号的每个像素中的颜色的信号值之和并将其与极限值进行比较。 当总和超过极限值时，基于用于将基色的信号值替换为专色的替换表的基色的信号值被替换为专色。

公开(公告)号：US07375409B2

公开(公告)日：2008-05-20

申请号：US10892459

申请日：2004-07-15

申请人： Yoko Sato

发明人： Yoko Sato

IPC分类号： H01L27/088

CPC分类号： H01L21/76283 ,  H01L27/1203

摘要： A semiconductor device is provided comprising a supporting substrate, an insulating layer on the substrate, and a first semiconductor layer on the insulating layer. A first high breakdown-voltage transistor is formed in the first semiconductor layer, a second semiconductor layer is formed on the insulating layer and a second high breakdown-voltage transistor is formed in the second semiconductor layer. A first element isolation region reaching the insulating layer is provided between the first and second semiconductor layers. A third semiconductor layer is formed on the insulating layer, a first low breakdown-voltage transistor is formed in the third semiconductor layer, a second low breakdown-voltage transistor is formed in the third semiconductor layer, and a second element isolation region not reaching the insulating layer is formed in the third semiconductor layer between the first and second low breakdown-voltage transistors. The first element isolation region comprises a dual-trench insulating layer.

摘要翻译： 提供了一种半导体器件，包括支撑衬底，衬底上的绝缘层和绝缘层上的第一半导体层。 在第一半导体层中形成第一高击穿电压晶体管，在绝缘层上形成第二半导体层，在第二半导体层中形成第二高击穿电压晶体管。 到达绝缘层的第一元件隔离区域设置在第一和第二半导体层之间。 在绝缘层上形成第三半导体层，在第三半导体层中形成第一低击穿电压晶体管，在第三半导体层中形成第二低击穿电压晶体管，在第二半导体层中形成第二低击穿电压晶体管， 绝缘层形成在第一和第二低击穿电压晶体管之间的第三半导体层中。 第一元件隔离区域包括双沟槽绝缘层。

公开(公告)号：US08664588B2

公开(公告)日：2014-03-04

申请号：US13368549

申请日：2012-02-08

申请人： Hiroyuki Noda ,  Mitsuru Onuma ,  Yoko Sato ,  Koji Ishiguro ,  Hidetoshi Morokuma ,  Shigeo Otsuki ,  Nami Ibi

发明人： Hiroyuki Noda ,  Mitsuru Onuma ,  Yoko Sato ,  Koji Ishiguro ,  Hidetoshi Morokuma ,  Shigeo Otsuki ,  Nami Ibi

IPC分类号： H01J49/00

CPC分类号： H01J49/0022 ,  H01J49/0013 ,  H05K7/20136

摘要： In the spectrometer, heavy loads are arranged centrally inside a case having a height smaller than a width, and having a depth smaller than the height. The heavy loads include a vacuum chamber, a vacuum pump which evacuates the vacuum chamber, a sample introduction unit which introduces a sample to be measured and evaporates the sample, an ionization unit which ionizes the evaporated sample and provides it to the vacuum chamber, and an ion detection unit which is connected to the vacuum chamber. Circuit board storage units which store a plurality of circuit boards with a predetermined space therebetween are formed on both sides along a width direction of the case.

摘要翻译： 在光谱仪中，重负荷被布置在具有小于宽度的高度的壳体的中央内部，并且具有比该高度更小的深度。 重负荷包括真空室，抽空真空室的真空泵，引入待测样品并蒸发样品的样品引入单元，离子化蒸发的样品并将其提供给真空室的离子化单元，以及 离子检测单元，连接到真空室。 在壳体的宽度方向的两侧形成存储有多个电路板的电路板存储单元。

公开(公告)号：USD655823S1

公开(公告)日：2012-03-13

申请号：US29384364

申请日：2011-01-31

申请人： Mitsuru Oonuma ,  Yoko Sato ,  Akira Omachi ,  Tetsuya Isobe ,  Kazuhiro Noda

设计人： Mitsuru Oonuma ,  Yoko Sato ,  Akira Omachi ,  Tetsuya Isobe ,  Kazuhiro Noda

公开(公告)号：US07609414B2

公开(公告)日：2009-10-27

申请号：US10995403

申请日：2004-11-23

申请人： Shuichi Kumada ,  Yoko Sato

发明人： Shuichi Kumada ,  Yoko Sato

IPC分类号： G06F15/00 ,  G03F3/08 ,  G06F3/12

CPC分类号： H04N1/00222 ,  G06K15/02 ,  G06K15/027 ,  G06K15/1807 ,  H04N1/00015 ,  H04N1/00031 ,  H04N1/00045 ,  H04N1/0005 ,  H04N1/00061 ,  H04N1/00079 ,  H04N1/00087 ,  H04N1/00233 ,  H04N1/00244 ,  H04N1/0035 ,  H04N1/6055

摘要： In order to obtain consistent output by a remote color printer over a communication network, a calibration is remotely performed on the remote color printer. More specifically, job data, including setting information for a calibration, is received, and the setting for the calibration is switched in accordance with the setting information between performing calibration processing on the job data by using calibration data obtained based on the setting information and performing calibration processing on the job data and job data received after the job data by using calibration data obtained based on the setting information.

摘要翻译： 为了通过远程彩色打印机通过通信网络获得一致的输出，在远程彩色打印机上远程执行校准。 更具体地，接收包括用于校准的设置信息的作业数据，并且根据通过使用基于设置信息获得的校准数据对作业数据执行校准处理之间的设置信息来切换校准设置，并执行 通过使用基于设置信息获得的校准数据，对作业数据之后接收到的作业数据和作业数据进行校准处理。

公开(公告)号：US20070262384A1

公开(公告)日：2007-11-15

申请号：US11809963

申请日：2007-06-04

申请人： Yoko Sato

发明人： Yoko Sato

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42384 ,  H01L29/78618

摘要： A semiconductor device comprising a high breakdown voltage transistor and a low breakdown voltage transistor. The semiconductor device comprises a support substrate, an insulating layer formed on the support substrate, a high breakdown voltage transistor, a low breakdown voltage transistor, wherein the high breakdown voltage transistor is adjacent to a first isolation region having a depth that reaches the insulating layer, and the low breakdown voltage transistor is adjacent to a second isolation region having a depth that does not reach the insulating layer.

公开(公告)号：US07238995B2

公开(公告)日：2007-07-03

申请号：US10789352

申请日：2004-02-26

申请人： Yoko Sato

发明人： Yoko Sato

IPC分类号： H01L29/76

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42384 ,  H01L29/78618

摘要： A semiconductor device comprising a high breakdown voltage transistor and a low breakdown voltage transistor. The semiconductor device comprises a support substrate, an insulating layer formed on the support substrate, a high breakdown voltage transistor, a low breakdown voltage transistor, wherein the high breakdown voltage transistor is adjacent to a first isolation region having a depth that reaches the insulating layer, and the low breakdown voltage transistor is adjacent to a second isolation region having a depth that does not reach the insulating layer.

摘要翻译： 一种包括高击穿电压晶体管和低击穿电压晶体管的半导体器件。 半导体器件包括支撑衬底，形成在支撑衬底上的绝缘层，高击穿电压晶体管，低击穿电压晶体管，其中高击穿电压晶体管与具有到达绝缘层的深度的第一隔离区相邻 并且低击穿电压晶体管与具有未到达绝缘层的深度的第二隔离区相邻。

公开(公告)号：US20050056908A1

公开(公告)日：2005-03-17

申请号：US10892459

申请日：2004-07-15

申请人： Yoko Sato

发明人： Yoko Sato

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L29/00

CPC分类号： H01L21/76283 ,  H01L27/1203

摘要： A semiconductor device is provided comprising a supporting substrate, an insulating layer on the substrate, and a first semiconductor layer on the insulating layer. A first high breakdown-voltage transistor is formed in the first semiconductor layer, a second semiconductor layer is formed on the insulating layer and a second high breakdown-voltage transistor is formed in the second semiconductor layer. A first element isolation region reaching the insulating layer is provided between the first and second semiconductor layers. A third semiconductor layer is formed on the insulating layer, a first low breakdown-voltage transistor is formed in the third semiconductor layer, a second low breakdown-voltage transistor is formed in the third semiconductor layer, and a second element isolation region not reaching the insulating layer is formed in the third semiconductor layer between the first and second low breakdown-voltage transistors. The first element isolation region comprises a dual-trench insulating layer.

摘要翻译： 提供了一种半导体器件，包括支撑衬底，衬底上的绝缘层和绝缘层上的第一半导体层。 在第一半导体层中形成第一高击穿电压晶体管，在绝缘层上形成第二半导体层，在第二半导体层中形成第二高击穿电压晶体管。 到达绝缘层的第一元件隔离区域设置在第一和第二半导体层之间。 在绝缘层上形成第三半导体层，在第三半导体层中形成第一低击穿电压晶体管，在第三半导体层中形成第二低击穿电压晶体管，在第二半导体层中形成第二低击穿电压晶体管， 绝缘层形成在第一和第二低击穿电压晶体管之间的第三半导体层中。 第一元件隔离区域包括双沟槽绝缘层。

公开(公告)号：US06709908B2

公开(公告)日：2004-03-23

申请号：US09791984

申请日：2001-02-23

申请人： Yoko Sato ,  Akihiko Ebina

发明人： Yoko Sato ,  Akihiko Ebina

IPC分类号： H01L2184

CPC分类号： H01L21/76264 ,  H01L21/76281 ,  H01L27/1203

摘要： Certain embodiments relate to methods for making a semiconductor device that inhibit the formation of a parasitic device. A method for making a semiconductor device includes a delimiting step and a dopant implantation step. The delimiting step partially oxidizes a single-crystal silicon layer provided on a semiconductor substrate 11 with an insulating layer therebetween to form a plurality of isolated single-crystal-silicon-layer segments 13a delimited by the insulating layer 16. In the implantation step, dopant ions 18 are implanted into the single-crystal-silicon-layer segments 13a to activate the single-crystal-silicon-layer segments 13a. In this implantation step, the dopant is implanted into the single-crystal-silicon-layer segments 13a by an implantation energy which is set so that the position of the maximum of the dopant concentration lies at bottom edges Ea and Eb of each single-crystal-silicon-layer segment 13a.

摘要翻译： 某些实施例涉及制造抑制寄生器件形成的半导体器件的方法。 制造半导体器件的方法包括限定步骤和掺杂剂注入步骤。 定界步骤部分氧化设置在半导体衬底11上的单晶硅层，其间具有绝缘层，以形成由绝缘层16限定的多个隔离的单晶硅层段13a。在注入步骤中，掺杂剂 将离子18注入到单晶硅层段13a中以激活单晶硅层段13a。 在该注入步骤中，通过注入能量将掺杂剂注入到单晶硅层段13a中，所述注入能量被设定为使得掺杂剂浓度的最大值的位置位于每个单晶的底部边缘Ea和Eb 硅层段13a。

公开(公告)号：US5677635A

公开(公告)日：1997-10-14

申请号：US282265

申请日：1994-07-29

申请人： Akira Fujii ,  Yoko Sato ,  Soichi Hama ,  Kazuyuki Ozaki ,  Yoshiro Goto ,  Yasutoshi Umehara ,  Yoshiaki Ogiso

发明人： Akira Fujii ,  Yoko Sato ,  Soichi Hama ,  Kazuyuki Ozaki ,  Yoshiro Goto ,  Yasutoshi Umehara ,  Yoshiaki Ogiso

IPC分类号： G01B11/00 ,  G01N37/00 ,  G01Q30/20 ,  G01Q60/24 ,  G01R1/067 ,  G01R1/07 ,  G01R19/00 ,  G01R31/302 ,  H01L21/66 ,  G01R29/12

CPC分类号： G01R1/071 ,  Y10S977/87

摘要： A voltage and displacement sensitive probe with an electro-optic crystal, electrically conductive transparent films and adhered to a pair of parallel surfaces on the electro-optic crystal, a transparent elastic film which circumferential portion is bonded to the frame and which is symmetric with respect to any plane through the axis thereof, a probing needle bonded at its reflective bottom surface to the central portion on the film, a holder for holding the electro-optic crystal and the transparent elastic film via frame concentrically, a lead for grounding, and electrically conductive films for connecting between the films. Displacement detection of the probing needle is based upon the change in the length of the path of the light travelling through the electro-optic crystal being reflected by the surface and travelling in reverse direction. Voltage detection of the probing needle is based upon the phase difference between the two linearly-polarized light components.

摘要翻译： 具有电光晶体的电压和位移敏感探针，导电透明膜并粘附到电光晶体上的一对平行表面，透明弹性膜，其周向部分结合到框架上并且相对于 通过其轴线到任何平面，探针在其反射底表面处连接到膜上的中心部分，用于通过框架同心地保持电光晶体和透明弹性膜的保持器，用于接地的引线和电 用于连接膜之间的导电膜。 探针的位移检测是基于通过电光晶体传播的光的路径的长度随表面反射并沿相反方向行进的变化。 探针的电压检测基于两个线性偏振光分量之间的相位差。