公开(公告)号：US20130277354A1

公开(公告)日：2013-10-24

申请号：US13571730

申请日：2012-08-10

申请人： Masatoshi Miyake ,  Ken'etsu Yokogawa ,  Takashi Uemura ,  Masaru Izawa ,  Satoshi Sakai

发明人： Masatoshi Miyake ,  Ken'etsu Yokogawa ,  Takashi Uemura ,  Masaru Izawa ,  Satoshi Sakai

IPC分类号： H05H1/48

CPC分类号： H01J37/32522 ,  H01J37/32724

摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.

摘要翻译： 提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。 在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热 和下电极; 以及在预热步骤之后加热被处理样品的热处理。 上电极和下电极是含有碳的电极。

公开(公告)号：US08034181B2

公开(公告)日：2011-10-11

申请号：US11679979

申请日：2007-02-28

申请人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

发明人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109

摘要： A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.

摘要翻译： 等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。 通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

公开(公告)号：US20080203925A1

公开(公告)日：2008-08-28

申请号：US11679979

申请日：2007-02-28

申请人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

发明人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

IPC分类号： H05H1/00

CPC分类号： H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109

摘要： A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.

摘要翻译： 等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。 通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

公开(公告)号：US06977229B2

公开(公告)日：2005-12-20

申请号：US10460155

申请日：2003-06-13

申请人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa

发明人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/0206 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67028 ,  H01L21/76807 ,  H01L21/76814

摘要： The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.

摘要翻译： 提供本发明以防止半导体器件制造工艺的干洗中的半导体器件的产量降低。 由于等离子体发生装置产生的第一气体的等离子体引起的电作用和化学作用以及由靠近主表面的平板焊接产生的高速气流的粘性摩擦力引起的物理作用 一起施加在一起以清洁晶片的主表面。 在清洁之后，将晶片暴露于相同真空室中的第二气体的等离子体，然后转移到大气中。

公开(公告)号：US06645870B2

公开(公告)日：2003-11-11

申请号：US09928500

申请日：2001-08-14

申请人： Nobuyuki Negishi ,  Masaru Izawa

发明人： Nobuyuki Negishi ,  Masaru Izawa

IPC分类号： H01L2100

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.

摘要翻译： 公开了一种半导体器件的制造方法，其有效地抑制形成在基底硅基板或互连层上的损伤层，并且在形成接触孔时去除高电阻率层，从而降低接触电阻。 在蚀刻深度进行时，以减少离子能量和氧气流量的蚀刻工序形成接触孔，由此抑制形成在基材上的损伤层。 通过使用氢或含氢气体等离子体去除高电阻率层的步骤来实现接触电阻的降低。

公开(公告)号：US20100025369A1

公开(公告)日：2010-02-04

申请号：US12202642

申请日：2008-09-02

申请人： Nobuyuki NEGISHI ,  Masaru Izawa ,  Kenji Maeda

发明人： Nobuyuki NEGISHI ,  Masaru Izawa ,  Kenji Maeda

IPC分类号： G01L11/02

CPC分类号： H01J37/32642 ,  H01J37/32935 ,  H01J37/3299

摘要： To monitor the thickness of a focus ring consumed during wafer processing. A plasma processing apparatus includes a vacuum chamber 1, workpiece mounting means 5, high frequency electric power introducing means 4 and radio-frequency bias electric power introducing means 7 and processes a surface of a workpiece 6 using a plasma that is converted from a gas introduced into the vacuum chamber 1 by the action of a high frequency electric power introduced by the high frequency electric power introducing means 4. The plasma processing apparatus further includes an annular member 11 surrounding the workpiece 6 mounted on the workpiece mounting means 5, and a pair of tubes having an aspect ratio of 3 or higher and disposed on a side wall of the vacuum chamber 1 to face each other. Each tube is vacuum-sealed at a tip end thereof with a glass material. One of the tubes has a light source 15 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material, and the other tube has light receiving means 16 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material. The light receiving means 16 receives light passing across the surface of the annular member 11.

摘要翻译： 监视在晶片处理期间消耗的聚焦环的厚度。 等离子体处理装置包括真空室1，工件安装装置5，高频电力引入装置4和射频偏置电力引入装置7，并使用从引入的气体转换的等离子体处理工件6的表面 通过高频电力引入装置4引入的高频电力进入真空室1.等离子体处理装置还包括环绕安装在工件安装装置5上的工件6的环形构件11和一对 的长径比为3或更高并且设置在真空室1的侧壁上以彼此面对的管。 每个管在其末端用玻璃材料进行真空密封。 其中一个管具有面向玻璃材料的气氛侧的真空室的内部设置的光源15，另一个管具有光接收装置16，该接收装置16面对真空室的大气侧的内部 玻璃材料。 光接收装置16接收穿过环形构件11的表面的光。

公开(公告)号：US20090181545A1

公开(公告)日：2009-07-16

申请号：US12400697

申请日：2009-03-09

申请人： Nobuyuki Negishi ,  Masaru Izawa ,  Masatsugu Arai

发明人： Nobuyuki Negishi ,  Masaru Izawa ,  Masatsugu Arai

IPC分类号： H01L21/3065

CPC分类号： H01J37/32935 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： A resist damage free dry-etching process is proposed. A time duration defined until bias electric power is applied is controlled according to a plasma ignition detection signal. Wafer back-side gas pressure for a certain constant time after starting of an etching process operation is set to be lower than that as to a main etching condition. Within the time duration defined after starting of the etching process operation up to a certain constant time, CxFy gas having a lower C/F ratio than that of the main etching condition is employed, or a flow rate of the CxFy gas is lowered. The above-described parameter values are controlled every wafer according to an amount of radicals contained in the plasma being monitored. A unit for preheating a wafer is installed in a wafer transporting system.

摘要翻译： 提出了一种抗蚀损坏自由干蚀刻工艺。 根据等离子体点火检测信号控制施加偏压电力之前定义的持续时间。 在开始蚀刻处理操作之后，将一定时间的晶片后侧气体压力设定为低于主蚀刻条件。 在蚀刻处理操作开始定义的持续时间之前，采用比主蚀刻条件低C / F比的CxFy气体，或者降低CxFy气体的流量。 根据被监测的等离子体中所含的自由基的量，每个晶片控制上述参数值。 用于预热晶片的单元安装在晶片传送系统中。

公开(公告)号：US20060141795A1

公开(公告)日：2006-06-29

申请号：US10531700

申请日：2002-10-18

申请人： Nobuyuki Negishi ,  Kenetsu Yokogawa ,  Masaru Izawa

发明人： Nobuyuki Negishi ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC分类号： H01L21/461

CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/76802 ,  H01L22/12

摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.

摘要翻译： 本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。 在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料 气体进入真空室和高频功率引入装置6.通过气体引入装置2引入真空室的气体通过高频功率转换成等离子体，并且多个孔选择性地形成在 在等离子体气氛中的主晶片表面的氧化膜23。 在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。

公开(公告)号：US20110030899A1

公开(公告)日：2011-02-10

申请号：US12709149

申请日：2010-02-19

申请人： Keizo SUZUKI ,  Masaru Izawa ,  Nobuyuki Negishi ,  Kenetsu Yokogawa ,  Kenji Maeda

发明人： Keizo SUZUKI ,  Masaru Izawa ,  Nobuyuki Negishi ,  Kenetsu Yokogawa ,  Kenji Maeda

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/50

CPC分类号： H01J37/3255 ,  H01J37/32091 ,  H01J37/32577

摘要： At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation.

摘要翻译： 放电电磁波的至少一部分经由具有作为放电电磁波的电介质（电绝缘体）的特性的透射电极被引入处理室，并且作为用于RF偏置电磁的导电性材料 离子等离子体振荡的电磁波波。

公开(公告)号：US20100297849A1

公开(公告)日：2010-11-25

申请号：US12512084

申请日：2009-07-30

申请人： Masatoshi Miyake ,  Nobuyuki Negishi ,  Masatoshi Oyama ,  Tadamitsu Kanekiyo ,  Masaru Izawa

发明人： Masatoshi Miyake ,  Nobuyuki Negishi ,  Masatoshi Oyama ,  Tadamitsu Kanekiyo ,  Masaru Izawa

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.

摘要翻译： 本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。 在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近 使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤 同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。