公开(公告)号：US20230413529A1

公开(公告)日：2023-12-21

申请号：US18177060

申请日：2023-03-01

Applicant: Kioxia Corporation

Inventor： Kasumi YASUDA ,  Hiroki KAWAI

IPC: H10B12/00

CPC classification number: H10B12/33

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a metal oxide semiconductor contacting the first electrode and the second electrode, a gate electrode, and an insulating film disposed between the metal oxide semiconductor and the gate electrode. The metal oxide semiconductor comprises indium, zinc, and niobium.

公开(公告)号：US20230411530A1

公开(公告)日：2023-12-21

申请号：US18177751

申请日：2023-03-02

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI

IPC: H01L29/786 ,  H01L29/423 ,  H01L23/528 ,  H10B12/00

CPC classification number: H01L29/78693 ,  H01L29/42392 ,  H01L23/5283 ,  H10B12/30

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor layer, an oxide conductor layer disposed on the oxide semiconductor layer, a first oxide layer disposed on the oxide conductor layer and comprising vanadium oxide, and a metal wiring layer disposed on the first oxide layer.

公开(公告)号：US20230085722A1

公开(公告)日：2023-03-23

申请号：US17687130

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Jieqiong ZHANG ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Takeshi IWASAKI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI ,  Hiroshi TAKEHIRA

IPC: H01L45/00

Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.

公开(公告)号：US20220093851A1

公开(公告)日：2022-03-24

申请号：US17469778

申请日：2021-09-08

Applicant: Kioxia Corporation

Inventor： Hiroshi TAKEHIRA ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Hiroki KAWAI ,  Yuichi ITO

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08

Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3-ZN line is B, the material has a composition satisfying X=1.2 (1−A) (0.5+B), Y=A (0.5+B), and W=1−X−Y, where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾

公开(公告)号：US20220068925A1

公开(公告)日：2022-03-03

申请号：US17193941

申请日：2021-03-05

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Junji KATAOKA ,  Keiji IKEDA

IPC: H01L27/108 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device of an embodiment includes an oxide semiconductor layer. The oxide semiconductor layer includes a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon. The oxide semiconductor layer includes a first region in which at least one anion element selected from the group consisting of fluorine and chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.

公开(公告)号：US20210288252A1

公开(公告)日：2021-09-16

申请号：US17184871

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Toshihiko NAGASE ,  Daisuke WATANABE ,  Yoshitomo KOBAYASHI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0