公开(公告)号：US07901206B2

公开(公告)日：2011-03-08

申请号：US11887004

申请日：2006-03-27

申请人： Akira Morohashi ,  Iwao Nakamura ,  Ryota Sasajima ,  Keishin Yamazaki ,  Sadao Nakashima

发明人： Akira Morohashi ,  Iwao Nakamura ,  Ryota Sasajima ,  Keishin Yamazaki ,  Sadao Nakashima

IPC分类号： F27D1/18 ,  F27D3/16

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.

摘要翻译： 提供一种能够实现保持高度安全性的高精度加工的热处理装置及其制造方法。 热处理装置包括用于处理基板的反应管; 用于支撑反应管的歧管; 和设置在反应管周围的加热器以加热反应管内部的加热器; 其中所述反应管和所述歧管在它们的连续平坦表面彼此接触时彼此接触; 盖构件被设置成从外侧覆盖反应管和歧管之间的接触部分; 并且盖构件设置有至少一个与形成在盖构件，反应管和歧管之间的空间连通的气体供给口或排气口。

公开(公告)号：US07865070B2

公开(公告)日：2011-01-04

申请号：US11578963

申请日：2005-03-22

申请人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

发明人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

IPC分类号： A21B2/00

CPC分类号： H01L21/67306 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67309

摘要： To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

摘要翻译： 防止由于突起造成的两个滑动，以及由于过度平滑而产生的粘合力引起的滑移。 热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。 船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。 晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra为1μm〜1000μm。 可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

公开(公告)号：US20100148415A1

公开(公告)日：2010-06-17

申请号：US12654837

申请日：2010-01-06

申请人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

发明人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

IPC分类号： B23Q3/00

CPC分类号： H01L21/67306 ,  H01L21/67098 ,  H01L21/67309

摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.

摘要翻译： 热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置， 提供。 基体支撑体由主体部分和支撑部分形成。 在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。 将基板放置在支撑部上。 支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。 支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

公开(公告)号：US20080267598A1

公开(公告)日：2008-10-30

申请号：US11578963

申请日：2005-03-22

申请人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

发明人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

IPC分类号： A21B2/00

CPC分类号： H01L21/67306 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67309

摘要： [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.[Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

摘要翻译： [问题]防止由于凸起造成的两个滑移，以及由于过度平滑而产生的粘合力引起的滑移。 解决问题的手段热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。 船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。 晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra设定为1μm〜1000μm。 可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

公开(公告)号：US08679989B2

公开(公告)日：2014-03-25

申请号：US12224879

申请日：2007-03-27

申请人： Sadao Nakashima ,  Takahiro Maeda ,  Kiyohiko Maeda ,  Kenji Kameda ,  Yushin Takasawa

发明人： Sadao Nakashima ,  Takahiro Maeda ,  Kiyohiko Maeda ,  Kenji Kameda ,  Yushin Takasawa

IPC分类号： H01L21/31

CPC分类号： C23C16/4405 ,  B08B7/00

摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.

摘要翻译： 制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜 元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体 供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

公开(公告)号：US20100275848A1

公开(公告)日：2010-11-04

申请号：US12768191

申请日：2010-04-27

申请人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

发明人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC分类号： C23C16/32

CPC分类号： C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

摘要： Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the processing chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

摘要翻译： 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。

公开(公告)号：US20090305517A1

公开(公告)日：2009-12-10

申请号：US12224879

申请日：2007-03-27

申请人： Sadao Nakashima ,  Takahiro Maeda ,  Kiyohiko Maeda ,  Kenji Kameda ,  Yushin Takasawa

发明人： Sadao Nakashima ,  Takahiro Maeda ,  Kiyohiko Maeda ,  Kenji Kameda ,  Yushin Takasawa

IPC分类号： H01L21/469 ,  C23C16/46

CPC分类号： C23C16/4405 ,  B08B7/00

摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.

摘要翻译： 制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜 元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体 供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

公开(公告)号：US20090061651A1

公开(公告)日：2009-03-05

申请号：US12230679

申请日：2008-09-03

申请人： Sadao Nakashima ,  Takahiro Maeda ,  Jie Wang

发明人： Sadao Nakashima ,  Takahiro Maeda ,  Jie Wang

IPC分类号： C23C16/34 ,  H01L21/31

CPC分类号： C23C16/345 ,  C23C16/4404

摘要： A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 μm but smaller than 86 μm.

摘要翻译： 一种基板处理装置，包括：处理基板的反应管; 支撑部，其支撑反应管中的基板; 将处理气体供给到反应管的工艺气体供给管线; 以及排出反应管内部的排气管，其中处理气体被供给到反应管中以在基板上形成氮化硅膜，至少反应管由石英制成，多个突起设置在 反应管的内壁和突起的直径大于2μm但小于86μm。

公开(公告)号：US5918136A

公开(公告)日：1999-06-29

申请号：US915301

申请日：1997-08-19

申请人： Sadao Nakashima ,  Katsutoshi Izumi ,  Norihiko Ohwada ,  Tatsuhiko Katayama

发明人： Sadao Nakashima ,  Katsutoshi Izumi ,  Norihiko Ohwada ,  Tatsuhiko Katayama

IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/265 ,  H01L21/31 ,  H01L21/762 ,  H01L21/86 ,  H01L27/00 ,  H01L27/12

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.

摘要翻译： 一种通过将氧离子注入单晶硅衬底并在高温下在惰性气体气氛中进行退火处理的方法来制造具有电绝缘状态的掩埋氧化层上的单晶硅层的SOI衬底 以形成掩埋氧化物层。 在掩埋氧化物层的厚度成为与由注入氧形成的掩埋氧化物层的厚度一致的理论值的退火处理之后，基板的氧化处理在高温氧气氛中进行。

公开(公告)号：US09074284B2

公开(公告)日：2015-07-07

申请号：US12768191

申请日：2010-04-27

申请人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

发明人： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

CPC分类号： C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

摘要： Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

摘要翻译： 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。