公开(公告)号：US08821174B2

公开(公告)日：2014-09-02

申请号：US13482293

申请日：2012-05-29

申请人： Masaki Kimura ,  Yuichi Takenaga

发明人： Masaki Kimura ,  Yuichi Takenaga

IPC分类号： H01R13/64

CPC分类号： H01R13/6315 ,  H01R12/7029

摘要： A floating connector has a stationary housing, a movable housing, and a reinforcing member. The reinforcing member is made of a metal plate and is provided with a first plate portion and a second plate portion. The first plate portion is embedded in a guide portion of the stationary housing so as to extend in a depth direction. The second plate portion is embedded in the guide portion so as to extend inward in a width direction from one end in the depth direction of the first plate portion.

摘要翻译： 浮动连接器具有固定壳体，可动壳体和加强构件。 加强构件由金属板制成并且设置有第一板部分和第二板部分。 第一板部分嵌入在固定壳体的引导部分中，以沿深度方向延伸。 所述第二板部嵌入所述引导部，以从所述第一板部的深度方向的一端向宽度方向延伸。

公开(公告)号：US08354135B2

公开(公告)日：2013-01-15

申请号：US12394288

申请日：2009-02-27

申请人： Yuichi Takenaga ,  Wenling Wang ,  Tatsuya Yamaguchi ,  Masahiko Kaminishi

发明人： Yuichi Takenaga ,  Wenling Wang ,  Tatsuya Yamaguchi ,  Masahiko Kaminishi

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/46 ,  C23C16/52

摘要： There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in-plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.

摘要翻译： 提供了一种热处理装置，用于调节热处理装置的温度的方法和可以容易地调节温度的程序。 热处理装置1的控制部件50控制该装置以在半导体晶片W上沉积SiO 2膜，并判断SiO 2膜是否满足面内均匀性。 当没有判断出面内均匀性被满足时，控制部50计算能够满足面内均匀性的温度的预热部23的温度。 控制部件50控制装置，以便在预热部件23的温度已经变化到计算温度的工艺条件下将SiO 2膜沉积在半导体晶片W上，并且预热部件23的温度被调节。 当判断面内均匀性被满足时，控制部50通过相同的程序来调节加热器11〜15的温度，以满足平面内的均匀性。

公开(公告)号：US08055372B2

公开(公告)日：2011-11-08

申请号：US12073063

申请日：2008-02-28

申请人： Yuki Kataoka ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Yuichi Takenaga

发明人： Yuki Kataoka ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Yuichi Takenaga

IPC分类号： G06F19/00 ,  G05B13/02 ,  G05D7/00 ,  C23C16/52 ,  B05C11/00

CPC分类号： H01L21/31658 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67253

摘要： The present invention provides a processing system, a processing method and a program, which can readily control a gas flow rate. A vertical-type heating apparatus 1 includes a plurality of gas supply pipes 16 to 20 each adapted for supplying a processing gas into a reaction vessel 2 configured to contain therein semiconductor wafers W. For the gas supply pipes 16 to 20, flow rate control units 21 to 25 are provided, respectively, for controlling each flow rate. In a control unit 50, processing conditions including the flow rate of the processing gas and a film thickness-flow rate-relationship model indicative of a relationship between the flow rate of the processing gas and a film thickness, are stored. The control unit 50 calculates the flow rate of the processing gas based on a process result obtained by processing the semiconductor wafers W under the processing conditions as well as on the film thickness-flow rate-relationship model, so as to process the semiconductor wafers W, while controlling the respective flow rate control units 21 to 25, such that the flow rate of the processing gas will be changed into the calculated flow rate of the processing gas.

摘要翻译： 本发明提供一种可以容易地控制气体流量的处理系统，处理方法和程序。 立式加热装置1包括多个气体供给管16至20，每个气体供给管适于将处理气体供应到构造成容纳在其中的半导体晶片W的反应容器2中。对于气体供给管16至20，流量控制单元 分别设置21〜25，用于控制每个流量。 在控制单元50中，存储包括处理气体的流量和指示处理气体的流量与膜厚度之间的关系的膜厚 - 流量 - 关系模型的处理条件。 控制单元50基于处理条件下的半导体晶片W以及薄膜厚度 - 流量 - 关系模型来处理半导体晶片W的处理结果来计算处理气体的流量，以处理半导体晶片W 同时控制各个流量控制单元21至25，使得处理气体的流量将改变为所计算的处理气体的流量。

公开(公告)号：US07953512B2

公开(公告)日：2011-05-31

申请号：US12230788

申请日：2008-09-04

申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

IPC分类号： G06F19/00 ,  B05C11/00

CPC分类号： H01L21/67276

摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。

公开(公告)号：US20100198386A1

公开(公告)日：2010-08-05

申请号：US12760017

申请日：2010-04-14

申请人： Kaname YAMAJI ,  Kiyoshi Suzuki ,  Yuichi Takenaga

发明人： Kaname YAMAJI ,  Kiyoshi Suzuki ,  Yuichi Takenaga

IPC分类号： G05B13/02

CPC分类号： C23C16/52 ,  G05B13/021 ,  H01L21/67005 ,  H01L22/12 ,  H01L22/20

摘要： The present invention is a method of optimizing a process recipe of a substrate processing system including: a substrate processing apparatus that performs a film deposition process of a substrate to be processed according to a process recipe; a data processing unit that executes a calculation for optimizing the process recipe; and a host computer; the substrate processing apparatus, the data processing unit, and the host computer being connected to each other through a network. The present invention includes the steps of: measuring a film thickness of a substrate to be processed that has been subjected to a film deposition process by the substrate processing apparatus; sending a command for conducting a process-recipe optimizing process from the host computer to the substrate processing apparatus, when the measured film thickness is deviated from a target film thickness and the deviation is beyond an allowable range; and in response to the command for conducing a process-recipe optimizing process from the host computer, sending required data from the substrate processing apparatus to the data processing unit, causing the data processing unit to execute a process-recipe optimizing calculation to calculate an optimum process recipe for achievement of the target film thickness, and updating the process recipe in the substrate processing apparatus based on the calculated result.

摘要翻译： 本发明是一种优化基板处理系统的工艺配方的方法，包括：基板处理装置，其根据处理配方进行待加工基板的成膜处理; 数据处理单元，其执行用于优化处理配方的计算; 和主机; 基板处理装置，数据处理单元和主机通过网络彼此连接。 本发明包括以下步骤：测量由基板处理装置进行的膜沉积处理的被处理基板的膜厚; 当测量的膜厚度偏离目标膜厚度并且偏差超出允许范围时，发送用于进行从主机到基板处理装置的处理配方优化处理的命令; 并且响应于从主计算机进行处理配方优化处理的命令，将所需数据从基板处理装置发送到数据处理单元，使数据处理单元执行处理配方优化计算以计算最佳值 用于实现目标膜厚度的处理配方，以及基于计算结果更新基板处理装置中的处理配方。

公开(公告)号：US20090078197A1

公开(公告)日：2009-03-26

申请号：US12230788

申请日：2008-09-04

申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

IPC分类号： B05C11/00 ,  G06F19/00

CPC分类号： H01L21/67276

摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。