公开(公告)号：US07953512B2

公开(公告)日：2011-05-31

申请号：US12230788

申请日：2008-09-04

申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

IPC分类号： G06F19/00 ,  B05C11/00

CPC分类号： H01L21/67276

摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。

公开(公告)号：US20090078197A1

公开(公告)日：2009-03-26

申请号：US12230788

申请日：2008-09-04

申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

IPC分类号： B05C11/00 ,  G06F19/00

CPC分类号： H01L21/67276

摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。

公开(公告)号：US08058699B2

公开(公告)日：2011-11-15

申请号：US12754702

申请日：2010-04-06

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

IPC分类号： H01L27/14

CPC分类号： H01L27/3269 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2320/0646 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/15 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N3/155 ,  H04N5/2251 ,  H04N5/374

摘要： An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

摘要翻译： 本发明的区域传感器具有通过使用发光元件和使用光电转换装置的读取功能在传感器部分中显示图像的功能。 因此，可在其上显示在传感器部分中读取的图像，而不在区域传感器上单独提供电子显示器。 此外，根据本发明的光电二极管的光电转换层由非晶硅膜制成，并且N型半导体层和P型半导体层由多晶硅膜制成。 非晶硅膜形成为比多晶硅膜厚。 结果，根据本发明的光电二极管可以接收更多的光。

公开(公告)号：US08012787B2

公开(公告)日：2011-09-06

申请号：US12989098

申请日：2008-04-30

申请人： Masato Yonezawa ,  Kimikazu Hazumi ,  Akihiro Takami ,  Hiroaki Morikawa ,  Kunihiko Nishimura

发明人： Masato Yonezawa ,  Kimikazu Hazumi ,  Akihiro Takami ,  Hiroaki Morikawa ,  Kunihiko Nishimura

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/068 ,  Y02E10/547

摘要： The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

摘要翻译： 该制造方法包括：在光入射表面侧的整个表面上形成P型硅衬底和其中N型杂质以第一浓度扩散的高浓度N型扩散层; 在高浓度N型扩散层上形成耐腐蚀性膜，在蚀刻电阻膜的凹部形成区域内的规定位置形成细孔; 通过在所述细孔的形成位置周围蚀刻所述硅基板而形成凹部，以便不将所述高浓度N型扩散层留在所述凹部形成区域内; 在其上形成凹部的表面上形成其中N型杂质以低于第一浓度的第二浓度扩散的低浓度N型扩散层; 以及在所述硅衬底的光入射表面侧的电极形成区域中形成栅电极。

公开(公告)号：US20060163577A1

公开(公告)日：2006-07-27

申请号：US11278841

申请日：2006-04-06

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/3269 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2320/0646 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/15 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N3/155 ,  H04N5/2251 ,  H04N5/374

摘要： An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

摘要翻译： 本发明的区域传感器具有通过使用发光元件和使用光电转换装置的读取功能在传感器部分中显示图像的功能。 因此，可在其上显示在传感器部分中读取的图像，而不在区域传感器上单独提供电子显示器。 此外，根据本发明的光电二极管的光电转换层由非晶硅膜制成，并且N型半导体层和P型半导体层由多晶硅膜制成。 非晶硅膜形成为比多晶硅膜厚。 结果，根据本发明的光电二极管可以接收更多的光。

公开(公告)号：US06827787B2

公开(公告)日：2004-12-07

申请号：US09777280

申请日：2001-02-05

申请人： Masato Yonezawa ,  Naoto Kusumoto ,  Hisato Shinohara

发明人： Masato Yonezawa ,  Naoto Kusumoto ,  Hisato Shinohara

IPC分类号： C23C1600

CPC分类号： C23C16/545

摘要： With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation apparatus having the conveyor device are provided, which have a unit for continuously conveying a flexible substrate from one end to the other end, and which are characterized in that a plurality of cylindrical rollers are provided between the one end and the other end along an arc with a radius R, the cylindrical rollers being arranged such that their center axes run parallel to each other, and that a mechanism for conveying the flexible substrate while the substrate is in contact with each of the plurality of cylindrical rollers is provided.

摘要翻译： 采用常规的圆筒罐法，用作成膜接地电极的区域是圆筒形罐的一部分，并且设备的尺寸与电极的表面积成比例变大。 本发明提供一种具有输送装置的输送装置和成膜装置，其具有从一端向另一端连续输送柔性基板的单元，其特征在于，在一端 并且另一端沿着具有半径R的圆弧，所述圆柱滚子被布置成使得它们的中心轴彼此平行地延伸;以及用于在所述基板与所述多个圆柱体中的每一个接触的同时传送所述柔性基板的机构 提供滚筒。

公开(公告)号：US06825492B2

公开(公告)日：2004-11-30

申请号：US10775128

申请日：2004-02-11

申请人： Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki ,  Jun Koyama ,  Yasuko Watanabe

发明人： Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki ,  Jun Koyama ,  Yasuko Watanabe

IPC分类号： H01H2904

CPC分类号： G06Q30/02 ,  G06Q30/0256 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/3244

摘要： The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element.

公开(公告)号：US20100304047A1

公开(公告)日：2010-12-02

申请号：US12476734

申请日：2009-06-02

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC分类号： H05H1/24 ,  B05D5/12

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20100193788A1

公开(公告)日：2010-08-05

申请号：US12754702

申请日：2010-04-06

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

IPC分类号： H01L33/00 ,  H01L31/0264

CPC分类号： H01L27/3269 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2320/0646 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/15 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N3/155 ,  H04N5/2251 ,  H04N5/374

摘要： An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

摘要翻译： 本发明的区域传感器具有通过使用发光元件和使用光电转换装置的读取功能在传感器部分中显示图像的功能。 因此，可在其上显示在传感器部分中读取的图像，而不在区域传感器上单独提供电子显示器。 此外，根据本发明的光电二极管的光电转换层由非晶硅膜制成，并且N型半导体层和P型半导体层由多晶硅膜制成。 非晶硅膜形成为比多晶硅膜厚。 结果，根据本发明的光电二极管可以接收更多的光。

公开(公告)号：US07528057B2

公开(公告)日：2009-05-05

申请号：US11382079

申请日：2006-05-08

申请人： Naoto Kusumoto ,  Toru Takayama ,  Masato Yonezawa

发明人： Naoto Kusumoto ,  Toru Takayama ,  Masato Yonezawa

IPC分类号： H01L21/20

CPC分类号： H01L21/67167 ,  H01L21/02068 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/67207 ,  H01L21/67213 ,  H01L27/1296 ,  H01L29/66757 ,  Y10S438/905 ,  Y10S438/906

摘要： A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.

摘要翻译： 激光退火方法包括清洗形成在基板上的非单晶硅膜的第一步骤和在其中含有氧的气氛中对非单晶硅膜进行激光退火的第二步骤，其中第一和 连续地进行第二步骤而不暴露于空气。 此外，激光退火装置包括清洁室和激光照射室，其中待处理的基板在清洁室和激光照射室之间传送而不暴露于空气。