公开(公告)号：US07953512B2

公开(公告)日：2011-05-31

申请号：US12230788

申请日：2008-09-04

申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

IPC分类号： G06F19/00 ,  B05C11/00

CPC分类号： H01L21/67276

摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。

公开(公告)号：US20090078197A1

公开(公告)日：2009-03-26

申请号：US12230788

申请日：2008-09-04

申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

IPC分类号： B05C11/00 ,  G06F19/00

CPC分类号： H01L21/67276

摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。

公开(公告)号：US20090232967A1

公开(公告)日：2009-09-17

申请号：US12394288

申请日：2009-02-27

申请人： Yuichi TAKENAGA ,  Wenling Wang ,  Tatsuya Yamaguchi ,  Masahiko Kaminishi

发明人： Yuichi TAKENAGA ,  Wenling Wang ,  Tatsuya Yamaguchi ,  Masahiko Kaminishi

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： C23C16/402 ,  C23C16/46 ,  C23C16/52

摘要： There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in-plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.

摘要翻译： 提供了一种热处理装置，用于调节热处理装置的温度的方法和可以容易地调节温度的程序。 热处理装置1的控制部件50控制该装置以在半导体晶片W上沉积SiO 2膜，并判断SiO 2膜是否满足面内均匀性。 当没有判断出面内均匀性被满足时，控制部50计算能够满足面内均匀性的温度的预热部23的温度。 控制部件50控制装置，以便在预热部件23的温度已经变化到计算温度的工艺条件下将SiO 2膜沉积在半导体晶片W上，并且预热部件23的温度被调节。 当判断面内均匀性被满足时，控制部50通过相同的程序来调节加热器11〜15的温度，以满足平面内的均匀性。

公开(公告)号：US08354135B2

公开(公告)日：2013-01-15

申请号：US12394288

申请日：2009-02-27

申请人： Yuichi Takenaga ,  Wenling Wang ,  Tatsuya Yamaguchi ,  Masahiko Kaminishi

发明人： Yuichi Takenaga ,  Wenling Wang ,  Tatsuya Yamaguchi ,  Masahiko Kaminishi

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/46 ,  C23C16/52

摘要： There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in-plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.

摘要翻译： 提供了一种热处理装置，用于调节热处理装置的温度的方法和可以容易地调节温度的程序。 热处理装置1的控制部件50控制该装置以在半导体晶片W上沉积SiO 2膜，并判断SiO 2膜是否满足面内均匀性。 当没有判断出面内均匀性被满足时，控制部50计算能够满足面内均匀性的温度的预热部23的温度。 控制部件50控制装置，以便在预热部件23的温度已经变化到计算温度的工艺条件下将SiO 2膜沉积在半导体晶片W上，并且预热部件23的温度被调节。 当判断面内均匀性被满足时，控制部50通过相同的程序来调节加热器11〜15的温度，以满足平面内的均匀性。

公开(公告)号：US08055372B2

公开(公告)日：2011-11-08

申请号：US12073063

申请日：2008-02-28

申请人： Yuki Kataoka ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Yuichi Takenaga

发明人： Yuki Kataoka ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Yuichi Takenaga

IPC分类号： G06F19/00 ,  G05B13/02 ,  G05D7/00 ,  C23C16/52 ,  B05C11/00

CPC分类号： H01L21/31658 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67253

摘要： The present invention provides a processing system, a processing method and a program, which can readily control a gas flow rate. A vertical-type heating apparatus 1 includes a plurality of gas supply pipes 16 to 20 each adapted for supplying a processing gas into a reaction vessel 2 configured to contain therein semiconductor wafers W. For the gas supply pipes 16 to 20, flow rate control units 21 to 25 are provided, respectively, for controlling each flow rate. In a control unit 50, processing conditions including the flow rate of the processing gas and a film thickness-flow rate-relationship model indicative of a relationship between the flow rate of the processing gas and a film thickness, are stored. The control unit 50 calculates the flow rate of the processing gas based on a process result obtained by processing the semiconductor wafers W under the processing conditions as well as on the film thickness-flow rate-relationship model, so as to process the semiconductor wafers W, while controlling the respective flow rate control units 21 to 25, such that the flow rate of the processing gas will be changed into the calculated flow rate of the processing gas.

摘要翻译： 本发明提供一种可以容易地控制气体流量的处理系统，处理方法和程序。 立式加热装置1包括多个气体供给管16至20，每个气体供给管适于将处理气体供应到构造成容纳在其中的半导体晶片W的反应容器2中。对于气体供给管16至20，流量控制单元 分别设置21〜25，用于控制每个流量。 在控制单元50中，存储包括处理气体的流量和指示处理气体的流量与膜厚度之间的关系的膜厚 - 流量 - 关系模型的处理条件。 控制单元50基于处理条件下的半导体晶片W以及薄膜厚度 - 流量 - 关系模型来处理半导体晶片W的处理结果来计算处理气体的流量，以处理半导体晶片W 同时控制各个流量控制单元21至25，使得处理气体的流量将改变为所计算的处理气体的流量。

公开(公告)号：US09324591B2

公开(公告)日：2016-04-26

申请号：US13438234

申请日：2012-04-03

申请人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D21/00 ,  H01L21/67

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1−α)+T2×α, α>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and α represents a mixing ratio.

摘要翻译： 一种热处理设备，包括：处理容器，用于处理保存在船上的晶片; 用于加热处理容器的加热器; 以及用于控制加热器的控制部。 加热器温度传感器设置在加热器和处理容器之间，容器内温度传感器设置在处理容器中，并且可移动的温度传感器设置在船上。 温度传感器连接到温度估计部。 温度估计部分选择三种类型的温度传感器中的两种，例如， 可移动温度传感器和容器内温度传感器，并根据以下公式确定晶片的温度：T = T1×（1-α）+ T2×α，α> 1，其中T1和T2表示检测温度 的选定温度传感器，α表示混合比。

公开(公告)号：US20120258415A1

公开(公告)日：2012-10-11

申请号：US13438234

申请日：2012-04-03

申请人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D21/00 ,  F27D3/00

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1−α)+T2×α, α>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and α represents a mixing ratio.

摘要翻译： 一种热处理设备，包括：处理容器，用于处理保存在船上的晶片; 用于加热处理容器的加热器; 以及用于控制加热器的控制部。 加热器温度传感器设置在加热器和处理容器之间，容器内温度传感器设置在处理容器中，并且可移动的温度传感器设置在船上。 温度传感器连接到温度估计部。 温度估计部分选择三种类型的温度传感器中的两种，例如， 可移动温度传感器和容器内温度传感器，并根据以下公式确定晶片的温度：T = T1×（1-α）+ T2×α，α> 1，其中T1和T2表示检测温度 的选定温度传感器，α表示混合比。

公开(公告)号：US20120064469A1

公开(公告)日：2012-03-15

申请号：US13221209

申请日：2011-08-30

申请人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D19/00 ,  F27D7/00 ,  F27D11/02 ,  F27B1/24

CPC分类号： F27B17/0025 ,  H01L21/67109 ,  H01L21/67248

摘要： A heat treatment apparatus and control method enabling the apparatus to settle down the internal temperature of a treating vessel to a target temperature accurately and quickly. The apparatus includes a furnace body with a heater on an inner circumferential surface thereof, a treating vessel disposed inside the furnace body, a cooling medium supply blower and cooling medium release blower connected to the furnace body, and a temperature sensor provided inside the treating vessel. A signal from the temperature sensor is sent to a heater output computing unit of a controller. The computing unit determines a heater output level to be obtained during temperature regulation with the heater only, the heater output level being based on a preset temperature that has been determined by a temperature determining unit and temperature detected by the temperature sensor. A blower output computing unit activates blower output based on the heater output level.

摘要翻译： 一种热处理装置和控制方法，使得该装置能够准确而快速地将处理容器的内部温度降至目标温度。 该装置包括在炉体内部具有加热器的炉体，设置在炉体内的处理容器，与炉体连接的冷却介质供给鼓风机和冷却介质排出鼓风机，以及设置在处理容器内的温度传感器 。 来自温度传感器的信号被发送到控制器的加热器输出计算单元。 计算单元确定仅在加热器的温度调节期间获得的加热器输出水平，加热器输出水平基于由温度确定单元确定的预设温度和由温度传感器检测的温度。 鼓风机输出计算单元基于加热器输出电平激活鼓风机输出。

公开(公告)号：US20130065189A1

公开(公告)日：2013-03-14

申请号：US13611317

申请日：2012-09-12

申请人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D15/02 ,  F27D3/00 ,  F27D21/00

CPC分类号： H01L21/67109 ,  C23C16/463 ,  C23C16/481 ,  H01L21/67248 ,  H01L21/67303 ,  H01L21/67757

摘要： A thermal treatment apparatus includes a processing container, a substrate holding unit for holding a plurality of substrates at predetermined intervals in a direction inside the processing container, a heating unit for heating the processing container, a supply unit for supplying gas, a plurality of supply ports provided respectively at different locations in the direction, and a cooling unit for cooling the processing container by supplying the gas into the processing container by the supply unit via each of the supply ports, wherein the supply unit is provided in such a way that the supply unit independently controls flow rates of the gases supplied via each of the supply ports.

摘要翻译： 热处理装置包括处理容器，用于以规定的间隔在处理容器内的方向保持多个基板的基板保持单元，加热处理容器的加热单元，供给气体的供给单元，多个供给部 分别在方向不同位置设置的端口，以及冷却单元，用于通过供给单元经由每个供给口将气体供给到处理容器中来冷却处理容器，其中，供给单元设置成 供应单元独立地控制经由每个供应端口供应的气体的流量。

公开(公告)号：US09209057B2

公开(公告)日：2015-12-08

申请号：US13571011

申请日：2012-08-09

申请人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： H05B1/02 ,  H01L21/677 ,  H01L21/67

CPC分类号： H01L21/67781 ,  H01L21/67248

摘要： Provided is a method of controlling temperatures of objects to be heated in a heating unit by adjusting a heating rate of each of a plurality of heating elements, based on temperature detection values detected at a plurality of temperature detection elements, wherein the plurality of temperature detection elements are positioned at different positions and the plurality of heating elements are positioned at different positions. The method includes estimating a temperature of each of the plurality of temperature detection elements by using a first estimation algorithm when one of the plurality of temperature detection elements is broken, based on the temperature detection values of the temperature detection elements excluding the broken temperature detection element, and controlling the temperatures of the objects to be heated based on the estimated temperatures.

摘要翻译： 提供了一种通过基于在多个温度检测元件检测到的温度检测值来调节多个加热元件的加热速度来控制加热单元中待加热物体的温度的方法，其中多个温度检测 元件位于不同的位置，并且多个加热元件位于不同的位置。 该方法包括：基于除了断开的温度检测元件之外的温度检测元件的温度检测值，通过使用第一估计算法来估计多个温度检测元件中的每一个的温度， 并且基于估计的温度来控制被加热物体的温度。