公开(公告)号：US07161689B2

公开(公告)日：2007-01-09

申请号：US10685306

申请日：2003-10-14

申请人： Thomas L. Ritzdorf ,  Steve L. Eudy ,  Gregory J. Wilson ,  Paul R. McHugh

发明人： Thomas L. Ritzdorf ,  Steve L. Eudy ,  Gregory J. Wilson ,  Paul R. McHugh

IPC分类号： G01B11/28 ,  H01L21/00 ,  H01L21/66 ,  G01R31/26 ,  C25D5/00 ,  C25D21/12

CPC分类号： H01L21/67173 ,  H01L21/67103 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/67276

摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

摘要翻译： 用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。 该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。 布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。 每个工具都可以设置一个测量单元来测量工件参数。 每个计量单元可用作每个工具的前馈控制和/或反馈控制。

公开(公告)号：US07160421B2

公开(公告)日：2007-01-09

申请号：US09866463

申请日：2001-05-24

申请人： Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

发明人： Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC分类号： C25D17/00 ,  C25D17/12 ,  C25D7/12 ,  C25D5/16

CPC分类号： C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D21/12 ,  Y10S204/07

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

公开(公告)号：US07102763B2

公开(公告)日：2006-09-05

申请号：US09902491

申请日：2001-07-09

申请人： Thomas L. Ritzdorf ,  Steve L. Eudy ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Brian Aegerter ,  Curt Dundas ,  Steven L. Peace

发明人： Thomas L. Ritzdorf ,  Steve L. Eudy ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Brian Aegerter ,  Curt Dundas ,  Steven L. Peace

IPC分类号： G01B11/28 ,  H01L21/306 ,  B05C11/00

CPC分类号： H01L21/67173 ,  H01L21/67103 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/67751

摘要： A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

公开(公告)号：US06428673B1

公开(公告)日：2002-08-06

申请号：US09612898

申请日：2000-07-08

申请人： Thomas L. Ritzdorf ,  Steve L. Eudy ,  Gregory J. Wilson ,  Paul R. McHugh

发明人： Thomas L. Ritzdorf ,  Steve L. Eudy ,  Gregory J. Wilson ,  Paul R. McHugh

IPC分类号： C25D2112

CPC分类号： C25D21/12

摘要： An electrochemical processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. An electrochemical deposition unit provides a space to receive said microelectronic workpiece to deposit a subsequent film layer onto a prior layer, wherein a condition signal from the metrology unit influences the process control of the electrochemical deposition unit. The signal can also be used to transfer the microelectronic workpiece to a layer stripping unit, or a layer enhancement unit, or to a non-compliance station. The apparatus is particularly useful in measuring seed layer thickness and adjusting the operating control of a computational fluid dynamic reactor, which electroplates a process layer onto the seed layer.

摘要翻译： 用于处理微电子工件的电化学处理装置包括测量单元和与计量单元信号连接的控制。 电化学沉积单元提供接收所述微电子工件以将后续膜层沉积到先前层上的空间，其中来自计量单元的条件信号影响电化学沉积单元的过程控制。 该信号还可用于将微电子工件传送到层剥离单元或层增强单元或不合规站。 该装置在测量种子层厚度和调节计算流体动力反应器的操作控制方面特别有用，计算流体动力反应器将处理层电镀到种子层上。

公开(公告)号：US20120052204A1

公开(公告)日：2012-03-01

申请号：US12873002

申请日：2010-08-31

申请人： Bryan Puch ,  Kyle M. Hanson ,  Marvin Bernt ,  Paul R. McHugh ,  Gregory J. Wilson

发明人： Bryan Puch ,  Kyle M. Hanson ,  Marvin Bernt ,  Paul R. McHugh ,  Gregory J. Wilson

IPC分类号： C23C16/56

CPC分类号： H01L21/6719 ,  H01L21/67057 ,  H01L21/67126

摘要： In a workpiece processor, a head is moveable onto a bowl to form a process chamber. A workpiece can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liquid. Vacuum may be applied to the chamber to reduce the pressure within the chamber, thereby reducing the boiling temperature of the liquid and allowing processing at lower temperatures. In a separate method for prewetting a workpiece, a humid gas is provided into the process chamber and condenses on the workpiece. In another separate method for wetting a workpiece, liquid water is provided into the bowl, with the workpiece above the liquid water. Water vapor is created in the process chamber by applying vacuum to the process chamber. The vapor wets the workpiece. The workpiece is then further wetted by submerging the workpiece into the liquid water.

摘要翻译： 在工件处理器中，头可移动到碗上以形成处理室。 工件可以通过将工件浸入碗中的液体浴中，然后煮沸液体而在处理器中进行清洁。 真空可以施加到室以减小室内的压力，从而降低液体的沸腾温度并允许在较低温度下进行加工。 在用于预润湿工件的单独方法中，将湿气提供到处理室中并在工件上冷凝。 在用于润湿工件的另一种分开的方法中，液体水被提供到碗中，工件在液态水上方。 通过对处理室施加真空，在处理室中产生水蒸汽。 蒸汽润湿工件。 然后通过将工件浸入液体水中来进一步润湿工件。

公开(公告)号：US07566386B2

公开(公告)日：2009-07-28

申请号：US10975154

申请日：2004-10-28

申请人： Gregory J. Wilson ,  Paul R. McHugh ,  Kyle M. Hanson

发明人： Gregory J. Wilson ,  Paul R. McHugh ,  Kyle M. Hanson

IPC分类号： C25D17/02 ,  C25F7/00 ,  C25D7/12

CPC分类号： C25D17/02 ,  C25D5/08 ,  C25D17/001 ,  Y10S204/07

摘要： A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

公开(公告)号：US07927469B2

公开(公告)日：2011-04-19

申请号：US11467232

申请日：2006-08-25

申请人： Nigel Stewart ,  Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Erik Lund ,  Steven L. Peace

发明人： Nigel Stewart ,  Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Erik Lund ,  Steven L. Peace

IPC分类号： C25F7/00

CPC分类号： H01L21/6719 ,  H01L21/67115 ,  H01L21/67126

摘要： A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The second electrode may move with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

摘要翻译： 用于制造多孔硅或处理其它衬底的处理器具有第一和第二室组件。 第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。 第二密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。 第二电极可以与第二密封件一起移动。 光源将光照射到晶片的第一面上。 处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。

公开(公告)号：US07857958B2

公开(公告)日：2010-12-28

申请号：US11776918

申请日：2007-07-12

申请人： Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson

发明人： Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson

IPC分类号： C25D5/00 ,  C25D21/12

CPC分类号： C25D21/12 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/6723

摘要： A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.

摘要翻译： 一种用于处理微特征工件的方法和装置。 在一个实施例中，该装置包括构造成在工件平面处承载微特征工件的支撑构件和至少靠近支撑构件定位的容器。 容器具有面向支撑构件的容器表面并且定位成承载处理液体。 容器表面成形为在工件平面处提供至少近似均匀的电流密度。 至少一个电极，例如电极，设置在容器内。 在该实施例的另一方面，该窃电电极可以容易地从其从处理液体吸引的导电材料移除。 在其他实施例中，容器表面的形状，提供给电极的电流和/或工件上游的孔的直径被动态地改变。

公开(公告)号：US20100078334A1

公开(公告)日：2010-04-01

申请号：US11457192

申请日：2006-07-13

申请人： Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Erik Lund ,  Steven L. Peace

发明人： Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Erik Lund ,  Steven L. Peace

IPC分类号： C25F3/00 ,  C25F7/00 ,  C25B9/00 ,  C25D17/00 ,  C25C7/00

CPC分类号： C25F7/00

摘要： An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

摘要翻译： 用于制造多孔硅或处理其它衬底的电化学处理器具有第一和第二室组件。 第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。 第一密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。 第一电极可以与第一密封件一起移动。 处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。

公开(公告)号：US20080003781A1

公开(公告)日：2008-01-03

申请号：US11608151

申请日：2006-12-07

申请人： Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Nigel Stewart ,  Erik Lund ,  Steven L. Peace

发明人： Daniel J. Woodruff ,  Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Nigel Stewart ,  Erik Lund ,  Steven L. Peace

IPC分类号： H01L21/326

CPC分类号： C25D17/001 ,  C25D17/004

摘要： A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first and/or second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal, and the second electrode may move along with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.

摘要翻译： 用于制造多孔硅或处理其它衬底的处理器具有第一和第二室组件。 第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。 第一和/或第二密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。 第一电极可以与第一密封件一起移动，并且第二电极可以与第二密封件一起移动。 光源将光照射到晶片的第一面上。 处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。