公开(公告)号：US20210384357A1

公开(公告)日：2021-12-09

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20200212221A1

公开(公告)日：2020-07-02

申请号：US16519577

申请日：2019-07-23

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

公开(公告)号：US20250063890A1

公开(公告)日：2025-02-20

申请号：US18798111

申请日：2024-08-08

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  JuHeyuck BAECK ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126

Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate and including an active hole; and a gate electrode on the active layer. The active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length. The active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.

公开(公告)号：US20250048739A1

公开(公告)日：2025-02-06

申请号：US18783662

申请日：2024-07-25

Applicant: LG DISPLAY CO., LTD.

Inventor： ChanYong JEONG ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  HongRak CHOI ,  Dohyun KWAK

IPC: H01L27/12 ,  H01L25/16

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

公开(公告)号：US20240162239A1

公开(公告)日：2024-05-16

申请号：US18381525

申请日：2023-10-18

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/02414 ,  H01L27/1218 ,  H01L27/1225 ,  H10K59/1213

Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.

公开(公告)号：US20240099063A1

公开(公告)日：2024-03-21

申请号：US18241283

申请日：2023-09-01

Applicant: LG DISPLAY CO., LTD.

Inventor： Dohyung LEE ,  JuHeyuck BAECK ,  Jiyong NOH ,  HongRak CHOI ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/126 ,  H10K71/861 ,  H10K2102/351

Abstract: A display panel and a display device both include a first active layer disposed on a substrate and including a channel area, a first area positioned on a first side of the channel area, and a second area positioned on a second side of the channel area, a first conductor on the first area, a second conductor on the second area, and a first auxiliary electrode on the first conductor, wherein an area where the first auxiliary electrode is disposed includes a repair area, thereby facilitating to repair a subpixel while mitigating or minimizing instantaneous ghosting on panel.

公开(公告)号：US20230307548A1

公开(公告)日：2023-09-28

申请号：US18204224

申请日：2023-05-31

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78696 ,  H01L29/78633 ,  H10K59/126

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US20230110764A1

公开(公告)日：2023-04-13

申请号：US17962783

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  KyungChul OK ,  Dohyung LEE ,  HongRak CHOI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L27/32

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device including the thin film transistor are provided, in which the thin film transistor includes a reducing pattern on a substrate, an active layer that is in contact with the reducing pattern, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first conductorization portion connected to one side of the channel portion, and a second conductorization portion connected to the other side of the channel portion, and the channel portion overlaps the gate electrode and does not overlap the reducing pattern.

公开(公告)号：US20240090276A1

公开(公告)日：2024-03-14

申请号：US18236225

申请日：2023-08-21

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  Younghyun KO ,  JuHeyuck BAECK

IPC: H10K59/126 ,  H10K59/131

CPC classification number: H10K59/126 ,  H10K59/131

Abstract: A display panel include a data signal line for supplying a data signal; a scan signal line for supplying a scan signal; and a subpixel connected to the data signal line and the scan signal line and including a first transistor including a first active layer, a first source electrode connected to one side of the first active layer, a first drain electrode connected to another side of the first active layer, and a first gate electrode overlapping with the first active layer, overlapping with all or at least a portion of the first source electrode, and overlapping with all or at least a portion of the first drain electrode, and are capable of preventing the exposure of the first transistor to light or hydrogen, and thereby preventing a decrease in characteristics of the first transistor due to light or hydrogen.

公开(公告)号：US20230207702A1

公开(公告)日：2023-06-29

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/4908 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.