公开(公告)号：US11171246B2

公开(公告)日：2021-11-09

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US12142691B2

公开(公告)日：2024-11-12

申请号：US17563887

申请日：2021-12-28

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

公开(公告)号：US12027631B2

公开(公告)日：2024-07-02

申请号：US18204224

申请日：2023-05-31

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/126

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/126

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US11984509B2

公开(公告)日：2024-05-14

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11705463B2

公开(公告)日：2023-07-18

申请号：US17113845

申请日：2020-12-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  Dohyung Lee ,  JuHeyuck Baeck

IPC: H01L27/14 ,  H01L27/12 ,  H10K59/131

CPC classification number: H01L27/124 ,  H01L27/1262 ,  H10K59/131

Abstract: Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

公开(公告)号：US20230146562A1

公开(公告)日：2023-05-11

申请号：US17978100

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  HongRak Choi ,  ChanYong Jeong

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/3272 ,  H01L27/1225

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises a first gate electrode and a second gate electrode, which are spaced apart from each other to overlap each other, and an active layer disposed between the first gate electrode and the second gate electrode, including a first active layer and a second active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first channel portion and a second channel portion, which are disposed in parallel.

公开(公告)号：US11121260B2

公开(公告)日：2021-09-14

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US12087835B2

公开(公告)日：2024-09-10

申请号：US18217147

申请日：2023-06-30

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC classification number: H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US20240215341A1

公开(公告)日：2024-06-27

申请号：US18481745

申请日：2023-10-05

Applicant: LG DISPLAY CO., LTD.

Inventor： Younghyun Ko ,  ChanYong Jeong

IPC: H10K59/124 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/1201

Abstract: Discussed are a display panel, a display device, and a method for manufacturing the display device, capable of preventing damage to an active layer and deterioration of an element. The display device can include an active layer having a channel area disposed between a first area and a second area, a first barrier layer disposed on a portion of an upper surface of the active layer, a first auxiliary electrode disposed on the first area on the first barrier, a second auxiliary electrode disposed on the second area on the first barrier layer, a first diffusion control layer disposed on the first and second auxiliary electrodes, an insulation layer disposed on the first diffusion control layer, and a first electrode electrically connected to the first auxiliary electrode and a second electrode electrically connected to the second auxiliary electrode, disposed on the insulation layer.

公开(公告)号：US11881531B2

公开(公告)日：2024-01-23

申请号：US17950024

申请日：2022-09-21

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H10K59/124 ,  H01L27/12

CPC classification number: H01L29/78645 ,  H01L27/124 ,  H01L27/1214 ,  H01L27/1222 ,  H01L29/78603 ,  H01L29/78696 ,  H10K59/124

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.