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    DRIVING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME
    12.
    发明公开
    DRIVING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230163137A1

    公开(公告)日：2023-05-25

    申请号：US17977368

    申请日：2022-10-31

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Kum-Mi OH ,  Deuk-Ho YEON ,  Sun-Wook KO

    IPC: H01L27/12 ,  H01L25/16

    CPC classification number: H01L27/1237 ,  H01L25/167

    Abstract: A driving thin film transistor includes an insulation layer disposed on a substrate and including a first groove; a first active layer corresponding to the first groove and including a channel region and source and drain regions at both sides of the channel region; first source and first drain electrodes spaced apart from each other and being in contact with the source and drain regions, respectively; and a gate electrode overlapping the channel region, wherein the channel region is disposed on a bottom surface and inner side surfaces of the first groove, and the source and drain regions are disposed on a top surface of the insulation layer.

    TFT SUBSTRATE AND LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME
    13.
    发明申请
    TFT SUBSTRATE AND LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220123153A1

    公开(公告)日：2022-04-21

    申请号：US17562641

    申请日：2021-12-27

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Kum-Mi OH

    IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417

    Abstract: A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

    ARRAY SUBSTRATE FOR FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME
    14.
    发明申请
    ARRAY SUBSTRATE FOR FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    用于FRINGE场切换模式液晶显示器的阵列基板及其制造方法

    公开(公告)号：US20130248870A1

    公开(公告)日：2013-09-26

    申请号：US13895677

    申请日：2013-05-16

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Young-Ki JUNG ,  Seok-Woo LEE ,  Kum-Mi OH ,  Dong-Cheon SHIN ,  In-Hyuk SONG ,  Han-Seok LEE ,  Won-Keun PARK

    IPC: H01L27/088

    CPC classification number: H01L27/088 ,  G02F2001/134372 ,  G02F2001/136236 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78633

    Abstract: A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer on a second passivation layer and having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer and having second and third thicknesses, respectively, the second thickness greater than the third thickness; etching the auxiliary insulating layer, the second passivation layer and a first passivation layer to form a drain contact hole; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose the first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness less than the first thickness; and performing a lift-off process to remove the first photoresist pattern and the transparent conductive material layer thereon together and form a pixel electrode as a remaining portion of the transparent conductive material layer.

    Abstract translation: 一种制造用于边缘场开关模式液晶显示器的阵列基板的方法包括：在第二钝化层上形成具有第一厚度的辅助绝缘层; 在所述辅助绝缘层上形成第一和第二光致抗蚀剂图案，并且分别具有第二和第三厚度，所述第二厚度大于所述第三厚度; 蚀刻辅助绝缘层，第二钝化层和第一钝化层以形成漏极接触孔; 执行灰化以去除第二光致抗蚀剂图案并在其下方露出辅助绝缘层; 执行干蚀刻以去除未被第一光致抗蚀剂图案覆盖的辅助绝缘层，并暴露第一钝化层并在第一光致抗蚀剂图案下方形成绝缘图案，绝缘图案和第一光致抗蚀剂图案形成底切形状; 形成具有小于第一厚度的第四厚度的透明导电材料层; 并且执行剥离处理以将第一光致抗蚀剂图案和透明导电材料层去除在一起，并形成作为透明导电材料层的剩余部分的像素电极。

    BACKPLANE SUBSTRATE AND ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME
    19.
    发明申请
    BACKPLANE SUBSTRATE AND ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME 审中-公开

    公开(公告)号：US20170317155A1

    公开(公告)日：2017-11-02

    申请号：US15581763

    申请日：2017-04-28

    Applicant: LG Display Co., Ltd.

    Inventor： Kum-Mi OH ,  Hye-Seon EOM

    IPC: H01L27/32 ,  H01L49/02

    CPC classification number: H01L27/3265 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L28/60

    Abstract: Disclosed are a backplane substrate which secures sufficient storage capacitance even when using small sub-pixels in a structure having very high resolution, and an organic light emitting diode display using the same. The backplane substrate includes storage capacitors including a first storage electrode, a second storage electrode partially overlapping the first storage electrode, a second storage connection electrode overlapping the first and second storage electrodes and connected to the second storage electrode at a first node, and a first storage connection electrode overlapping the second storage connection electrode and connected to the first storage electrode at a second node at which the first and second storage electrodes do not overlap each other, in a storage capacitor region defined by intersecting a scan line, a first voltage line and a data line at each sub-pixel.

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