公开(公告)号：US20230411409A1

公开(公告)日：2023-12-21

申请号：US17974430

申请日：2022-10-26

Applicant: LG Display Co., Ltd.

Inventor： SungJun YUN ,  PilSang YUN ,  Taegyun KIM ,  MinSu KIM ,  InTak CHO ,  ISak LEE

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/124 ,  H01L27/1259

Abstract: Disclosed are a display device and a manufacturing method thereof. More particularly, a display device including a substrate, a buffer layer disposed on the substrate, an active layer disposed on the buffer layer, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, wherein the gate insulating film includes a first portion and a second portion, wherein the first portion is closer to the active layer than the second portion and the second portion is closer to the gate electrode than the first portion, and the gate insulating film includes two or more elements having different component concentrations in the first portion and the second portion, and a manufacturing method thereof are provided to provide a transistor structure having high reliability.

公开(公告)号：US20210384357A1

公开(公告)日：2021-12-09

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20210202760A1

公开(公告)日：2021-07-01

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  JungSeok SEO ,  PilSang YUN ,  InTak CHO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US20210202754A1

公开(公告)日：2021-07-01

申请号：US17121248

申请日：2020-12-14

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  PilSang YUN ,  Jiyong NOH ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US20230207702A1

公开(公告)日：2023-06-29

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/4908 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20230018306A1

公开(公告)日：2023-01-19

申请号：US17958167

申请日：2022-09-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  PilSang YUN ,  Jiyong NOH ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US20200184903A1

公开(公告)日：2020-06-11

申请号：US16694674

申请日：2019-11-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak CHO ,  PilSang YUN ,  Jeyong JEON ,  Jiyong NOH ,  SeHee PARK

IPC: G09G3/3291 ,  H01L27/32 ,  G09G3/3266

Abstract: An electronic device can include: a panel; a driver circuit configured to drive the panel; and first and second transistors disposed in the panel, the first and second transistors including: a first electrode of the first transistor, the first electrode being disposed on a substrate; a first insulating film disposed on the substrate, overlapping an edge of the first electrode and having an open area for receiving portions of the second transistor; a second electrode of the first transistor, the second electrode being disposed on the first insulating film and overlapping with a portion of the first electrode; third and fourth electrodes of the second transistor, the third electrode and the fourth electrode being disposed on a same layer as the second electrode and spaced apart from the second electrode, the open area of the first insulating film being disposed between the third electrode and the fourth electrode; a first active layer of the first transistor, the first active layer being disposed on the first electrode, the first insulating film and the second electrode; and a second active layer of the second transistor, the second active layer being disposed on the third and fourth electrodes and across the open area of the first insulating film.

公开(公告)号：US20200161476A1

公开(公告)日：2020-05-21

申请号：US16575077

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SangYun SUNG ,  SeHee PARK ,  Jiyong NOH ,  InTak CHO ,  PilSang YUN

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

公开(公告)号：US20190206972A1

公开(公告)日：2019-07-04

申请号：US16219440

申请日：2018-12-13

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  PilSang YUN ,  Jaeyoon PARK

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52 ,  G09G3/3291

Abstract: An organic light emitting display panel can include a substrate; pixels disposed on the substrate; a driving transistor including: a driving active layer, a driving gate electrode overlapping with the driving active layer, a driving first conductor extended from one end of the driving active layer, a driving second conductor extended from the other end of the driving active layer, and a driving first gate insulating film overlapping with the driving active layer; a switching transistor including: a switching active layer, a switching gate electrode overlapping with the switching active layer, a switching first conductor extended from one end of the switching active layer, a switching second conductor extended from the other end of the switching active layer, and a switching first gate insulating film overlapping with the switching active layer; an organic light emitting diode; and a second gate insulating film disposed between the driving and switching gate electrodes of the driving and switching transistors, and the driving first conductor, the driving second conductor, the driving first gate insulating film, the switching first conductor, the switching second conductor and the switching first gate insulating film.

公开(公告)号：US20190181274A1

公开(公告)日：2019-06-13

申请号：US16211151

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jiyong NOH ,  Jaeman JANG ,  JuHeyuck BAECK ,  PilSang YUN

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.