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公开(公告)号:US11177390B2
公开(公告)日:2021-11-16
申请号:US16574725
申请日:2019-09-18
Applicant: LG DISPLAY CO., LTD.
Inventor: InTak Cho , JungSeok Seo , SeHee Park , Jaeyoon Park , SangYun Sung
IPC: H01L29/786 , H01L27/12 , H01L29/10
Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.
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12.
公开(公告)号:US11121260B2
公开(公告)日:2021-09-14
申请号:US16705767
申请日:2019-12-06
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , JungSeok Seo , PilSang Yun , Jeyong Jeon , Jaeyoon Park , ChanYong Jeong
IPC: H01L29/78 , H01L29/49 , H01L29/786 , H01L29/66 , H01L29/24
Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.
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13.
公开(公告)号:US10811485B2
公开(公告)日:2020-10-20
申请号:US16219440
申请日:2018-12-13
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , PilSang Yun , Jaeyoon Park
IPC: H01L27/32 , H01L51/52 , G09G3/3291 , H01L27/12 , G09G3/3233
Abstract: An organic light emitting display panel can include a substrate; pixels disposed on the substrate; a driving transistor including: a driving active layer, a driving gate electrode overlapping with the driving active layer, a driving first conductor extended from one end of the driving active layer, a driving second conductor extended from the other end of the driving active layer, and a driving first gate insulating film overlapping with the driving active layer; a switching transistor including: a switching active layer, a switching gate electrode overlapping with the switching active layer, a switching first conductor extended from one end of the switching active layer, a switching second conductor extended from the other end of the switching active layer, and a switching first gate insulating film overlapping with the switching active layer; an organic light emitting diode; and a second gate insulating film disposed between the driving and switching gate electrodes of the driving and switching transistors, and the driving first conductor, the driving second conductor, the driving first gate insulating film, the switching first conductor, the switching second conductor and the switching first gate insulating film.
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公开(公告)号:US10236310B2
公开(公告)日:2019-03-19
申请号:US15824974
申请日:2017-11-28
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , HongRak Choi , PilSang Yun , HyungJoon Koo , Kwanghwan Ji , Jaeyoon Park
IPC: H01L27/12 , H01L27/32 , H01L29/49 , H01L29/78 , H01L51/56 , H01L29/417 , H01L27/07 , H01L29/786
Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.
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15.
公开(公告)号:US11658189B2
公开(公告)日:2023-05-23
申请号:US17196805
申请日:2021-03-09
Applicant: LG Display Co., Ltd.
Inventor: Jaeman Jang , SeHee Park , DaeHwan Kim , PilSang Yun
CPC classification number: H01L27/1255 , H01L27/1225 , H01L27/1251 , H01L27/3262
Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.
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公开(公告)号:US11594556B2
公开(公告)日:2023-02-28
申请号:US17378333
申请日:2021-07-16
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , InTak Cho , DaeHwan Kim , JuHeyuck Baeck , Jiyong Noh
IPC: H01L27/12 , H01L29/786 , H01L29/49 , G11C19/28 , G09G3/3225 , G09G3/3266 , G09G3/3233
Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
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公开(公告)号:US11476281B2
公开(公告)日:2022-10-18
申请号:US16521906
申请日:2019-07-25
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , JungSeok Seo , Jaeyoon Park , PilSang Yun , Jiyong Noh
Abstract: An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.
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公开(公告)号:US10777772B2
公开(公告)日:2020-09-15
申请号:US16668262
申请日:2019-10-30
Applicant: LG Display Co., Ltd.
Inventor: Jiyong Noh , PilSang Yun , SeHee Park , JungSeok Seo
Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.
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公开(公告)号:US10741126B2
公开(公告)日:2020-08-11
申请号:US15828194
申请日:2017-11-30
Applicant: LG Display Co., Ltd.
Inventor: HongRak Choi , SeHee Park , PilSang Yun , HyungJoon Koo , Kwanghwan Ji , Jaeyoon Park
IPC: G09G3/325 , H01L27/32 , H01L27/12 , G09G3/3233 , G02F1/1676
Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.
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公开(公告)号:US11094793B2
公开(公告)日:2021-08-17
申请号:US16538587
申请日:2019-08-12
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , InTak Cho , DaeHwan Kim , JuHeyuck Baeck , Jiyong Noh
IPC: H01L29/49 , H01L29/786 , H01L27/12 , G09G3/3266 , G11C19/28 , G09G3/3225 , G09G3/3233
Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
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