公开(公告)号：US11417774B2

公开(公告)日：2022-08-16

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US10325937B2

公开(公告)日：2019-06-18

申请号：US14628378

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/822

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US20180012913A1

公开(公告)日：2018-01-11

申请号：US15699126

申请日：2017-09-08

Applicant: LG DISPLAY CO., LTD.

Inventor： Sohyung Lee ,  Youngyoung Chang ,  Kwonshik Park ,  Mincheol Kim ,  Jeongsuk Yang

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/322 ,  H01L27/3265

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

公开(公告)号：US09691799B2

公开(公告)日：2017-06-27

申请号：US14629632

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  G02F1/1345 ,  G02F1/1368

CPC classification number: H01L27/1251 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US12249655B2

公开(公告)日：2025-03-11

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11791418B2

公开(公告)日：2023-10-17

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

CPC classification number: H01L29/7869 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0245 ,  G09G2310/08

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US10903246B2

公开(公告)日：2021-01-26

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

公开(公告)号：US09786697B2

公开(公告)日：2017-10-10

申请号：US15182265

申请日：2016-06-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Sohyung Lee ,  Youngyoung Chang ,  Kwonshik Park ,  Mincheol Kim ,  Jeongsuk Yang

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/13 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3265

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

公开(公告)号：US09721973B2

公开(公告)日：2017-08-01

申请号：US14629554

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Hoyoung Jung ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

公开(公告)号：US20140111709A1

公开(公告)日：2014-04-24

申请号：US14049569

申请日：2013-10-09

Applicant: LG Display Co., Ltd.

Inventor： Dongsup Kim ,  Byungkoo Kang ,  Sohyung Lee ,  Sungyong Cho

IPC: G02F1/1333

CPC classification number: G02F1/13338 ,  G06F3/044 ,  G06F2203/04111 ,  G06F2203/04112

Abstract: A touch screen panel includes a plurality of first touch electrode serials arranged in a first direction, a plurality of second touch electrode serials arranged in a second direction crossing the first direction, and an insulating layer insulating the first touch electrode serials and the second touch electrode serials. Each first touch electrode serial includes a plurality of first mesh patterns formed by an intersection of first metal lines. Each second touch electrode serial includes a plurality of second mesh patterns formed by an intersection of second metal lines. The first mesh patterns are connected to one another, and the second mesh patterns are separated from one another. The separated first mesh patterns are connected to one another through a bridge.

Abstract translation: 触摸屏面板包括沿第一方向布置的多个第一触摸电极序列，沿与第一方向交叉的第二方向布置的多个第二触摸电极序列和将第一触摸电极序列和第二触摸电极绝缘的绝缘层 连续剧 每个第一触摸电极串联包括由第一金属线的交点形成的多个第一网格图案。 每个第二触摸电极串联包括由第二金属线的相交形成的多个第二网格图案。 第一网格图案彼此连接，并且第二网格图案彼此分离。 分离的第一网格图案通过桥连接到彼此。