公开(公告)号：US10083990B2

公开(公告)日：2018-09-25

申请号：US14838564

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Kwanghwan Ji ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1222 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/78633 ,  H01L29/78672 ,  H01L29/7869 ,  H01L51/5209 ,  H01L51/5225

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.

公开(公告)号：US11705460B2

公开(公告)日：2023-07-18

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US11276710B2

公开(公告)日：2022-03-15

申请号：US16659528

申请日：2019-10-21

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US10453944B2

公开(公告)日：2019-10-22

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  SeHee Park ,  HyungJoon Koo ,  Kwanghwan Ji ,  PilSang Yun

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

公开(公告)号：US10290658B2

公开(公告)日：2019-05-14

申请号：US15828207

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo ,  SeHee Park ,  Kwanghwan Ji ,  PilSang Yun ,  Jaeyoon Park ,  HongRak Choi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.