Thin Film Transistor and Display Device Comprising the Same

    公开(公告)号:US20230146562A1

    公开(公告)日:2023-05-11

    申请号:US17978100

    申请日:2022-10-31

    CPC classification number: H01L27/3262 H01L27/3272 H01L27/1225

    Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises a first gate electrode and a second gate electrode, which are spaced apart from each other to overlap each other, and an active layer disposed between the first gate electrode and the second gate electrode, including a first active layer and a second active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first channel portion and a second channel portion, which are disposed in parallel.

    Panel, electronic device and transistor

    公开(公告)号:US11276710B2

    公开(公告)日:2022-03-15

    申请号:US16659528

    申请日:2019-10-21

    Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

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