Thin film transistor, method for manufacturing the same and display device comprising the same

    公开(公告)号:US10680117B2

    公开(公告)日:2020-06-09

    申请号:US16199945

    申请日:2018-11-26

    Inventor: Kwanghwan Ji

    Abstract: A thin film transistor is disclosed, which includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a hydrogen supply layer on the gate insulating film; a source electrode connected with the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer includes a channel portion overlapped with the gate electrode and a connecting portion not overlapped with the gate electrode, a hydrogen concentration of the connecting portion is higher than that of the channel portion, and the gate insulating film includes a first area overlapped with the gate electrode and a second area not overlapped with the gate electrode, and a hydrogen concentration of the second area is higher that of the first area.

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