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公开(公告)号:US10014419B2
公开(公告)日:2018-07-03
申请号:US15643180
申请日:2017-07-06
Applicant: LG ELECTRONICS INC.
Inventor: Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC: H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077
CPC classification number: H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/03685 , H01L31/0747 , H01L31/077 , H01L31/1824 , H01L31/1864 , H01L31/1868 , Y02E10/50
Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.
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公开(公告)号:US09722104B2
公开(公告)日:2017-08-01
申请号:US14953264
申请日:2015-11-27
Applicant: LG ELECTRONICS INC.
Inventor: Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC: H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077 , H01L31/18
CPC classification number: H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/03685 , H01L31/0747 , H01L31/077 , H01L31/1824 , H01L31/1864 , H01L31/1868 , Y02E10/50
Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.
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公开(公告)号:US09214593B2
公开(公告)日:2015-12-15
申请号:US14691396
申请日:2015-04-20
Applicant: LG ELECTRONICS INC.
Inventor: Jungmin Ha , Junyong Ahn , Jinho Kim
IPC: H01L31/18 , H01L31/0216 , H01L31/0352 , H01L31/068 , H01L31/0224
CPC classification number: H01L31/186 , H01L31/02168 , H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/18 , H01L31/1864 , Y02E10/52 , Y02E10/547
Abstract: A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.
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