公开(公告)号：US20190198685A1

公开(公告)日：2019-06-27

申请号：US16290233

申请日：2019-03-01

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yiyin YU ,  Youngsung YANG ,  Yongduk JIN ,  Manhyo HA ,  Seongeun LEE

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/02167 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

Abstract: A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

公开(公告)号：US20180122981A1

公开(公告)日：2018-05-03

申请号：US15858016

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Hyungjin KWON ,  Chungyi KIM ,  Junghoon CHOI

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L21/02

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

公开(公告)号：US20170047456A1

公开(公告)日：2017-02-16

申请号：US15334611

申请日：2016-10-26

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yiyin YU ,  Youngsung YANG ,  Yongduk JIN ,  Manhyo HA ,  Seongeun LEE

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/02167 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.

Abstract translation: 太阳能电池可以包括第一导电类型的衬底; 位于所述基板的前表面并具有不同于所述第一导电类型的第二导电类型的发射极区域; 位于与所述基板的前表面相对的后表面的背面场区域; 包括依次位于发射极区域上的多个层的前钝化区域; 包括依次位于所述背面场区域上的多个层的背面钝化区域; 前电极部分，其穿过前钝化区域并连接到发射极区域，其中前电极部分包括彼此分开的多个前电极和连接多个前电极的前汇流条; 背面电极部分，其穿过所述背部钝化区域并连接到所述背面场区域，其中所述背面电极部分包括彼此分开的多个背部电极和连接所述多个背面电极的后部母线， 其中所述前钝化区包括第一氧化铝层，所述后钝化区包括第二氧化铝层。

公开(公告)号：US20160380130A1

公开(公告)日：2016-12-29

申请号：US15259356

申请日：2016-09-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Yongduk JIN ,  Manhyo HA ,  Juhwa CHEONG

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

Abstract translation: 一种制造太阳能电池的方法，所述方法包括：制备半导体衬底; 离子注入预非晶化元件以在半导体衬底的一个表面的至少一部分上形成非晶层; 将第一导电型掺杂剂离子注入到半导体衬底的一个表面以形成第一掺杂剂层; 以及形成与所述第一掺杂剂层电连接的第一电极，其中所述第一掺杂剂层的一部分中的所述预非晶化元素的浓度不同于所述第一掺杂剂层的另一部分中的所述预非晶化元素的浓度。

公开(公告)号：US20160365472A1

公开(公告)日：2016-12-15

申请号：US15178274

申请日：2016-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Hyungjin KWON ,  Chungyi KIM ,  Junghoon CHOI

IPC: H01L31/18

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

Abstract translation: 公开了一种制造太阳能电池的方法。 该方法包括使用半导体衬底上的绝缘膜形成保护膜，该半导体衬底包括第一导电类型的基底区域并由晶体硅形成。 保护膜的形成包括在具有卤素元素的卤素气体的气体气氛下，在600℃以上的热处理温度下进行的热处理工序。

公开(公告)号：US20160111560A1

公开(公告)日：2016-04-21

申请号：US14974407

申请日：2015-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yiyin YU ,  Youngsung YANG ,  Yongduk JIN ,  Manhyo HA ,  Seongeun LEE

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/02167 ,  H01L31/02008 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.

公开(公告)号：US20160056322A1

公开(公告)日：2016-02-25

申请号：US14830480

申请日：2015-08-19

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Junghoon CHOI ,  Chungyi KIM

IPC: H01L31/068 ,  H01L31/0352 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

Abstract: A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.

Abstract translation: 讨论太阳能电池，太阳能电池包括：半导体衬底; 在所述半导体衬底的表面上的隧穿层; 在所述隧道层上的缓冲层，其中所述缓冲层是与所述隧穿层分离的层，并且包括本征缓冲部分，并且其中所述缓冲层的材料，组成和晶体结构中的至少一种与所述缓冲层的材料， 的隧道层; 在隧穿层上的导电型区域，并且包括具有第一导电类型的第一导电类型区域和具有第二导电类型的第二导电类型区域; 以及连接到导电类型区域的电极。 缓冲层位于隧道层附近并与电极分开。