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11.发明申请METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 有权用于提供使用旋转转移的磁记忆结构的方法和系统公开(公告)号：US20080151611A1
公开(公告)日：2008-06-26
申请号：US12030541
申请日：2008-02-13
申请人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储单元，局部和全局字线，位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。
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12.发明授权Method and system for providing a magnetic memory structure utilizing spin transfer 有权提供利用自旋转移的磁记忆体结构的方法和系统公开(公告)号：US07345912B2
公开(公告)日：2008-03-18
申请号：US11446391
申请日：2006-06-01
申请人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。
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13.发明授权Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices 有权具有硬偏磁场的磁性装置和使用磁性装置的磁存储装置公开(公告)号：US07230845B1
公开(公告)日：2007-06-12
申请号：US11192811
申请日：2005-07-29
申请人： Lien-Chang Wang , Yiming Huai
发明人： Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： A method and system for providing a magnetic memory device are disclosed. The method and system include providing a magnetic element that includes a data storage layer having at least one easy axis in at least a first direction. The method and system also include providing a hard bias structure surrounding a portion of the magnetic element. The hard bias structure is also configured to provide at least one hard bias field essentially parallel to the at least the first direction or essentially perpendicular to the at least the first direction.
摘要翻译： 公开了一种用于提供磁存储器件的方法和系统。 该方法和系统包括提供包括在至少第一方向上具有至少一个易轴的数据存储层的磁性元件。 该方法和系统还包括提供围绕磁性元件的一部分的硬偏置结构。 硬偏置结构还被配置为提供基本上平行于至少第一方向或基本上垂直于至少第一方向的至少一个硬偏置场。
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14.发明授权Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换公开(公告)号：US07379327B2
公开(公告)日：2008-05-27
申请号：US11476171
申请日：2006-06-26
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译： 一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。
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15.发明申请Method and system for providing a magnetic memory structure utilizing spin transfer 有权提供利用自旋转移的磁记忆体结构的方法和系统公开(公告)号：US20070279968A1
公开(公告)日：2007-12-06
申请号：US11446391
申请日：2006-06-01
申请人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。
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公开(公告)号：US08533937B1
公开(公告)日：2013-09-17
申请号：US13275926
申请日：2011-10-18
申请人： Jinwen Wang , Weimin Si , Jianxin Fang , Ying Hong , Hongzhou Jiang , Ching-Huang Lu , Yan Chen , Donghong Li , Lien-Chang Wang , Lieping Zhong , Tao Pan
发明人： Jinwen Wang , Weimin Si , Jianxin Fang , Ying Hong , Hongzhou Jiang , Ching-Huang Lu , Yan Chen , Donghong Li , Lien-Chang Wang , Lieping Zhong , Tao Pan
CPC分类号： G11B5/112 , G11B5/1276 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3153 , G11B5/3163 , H04R31/00 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method or forming a wrapped-around shielded perpendicular magnetic recording writer pole is disclosed. A structure comprising a leading shield layer and an intermediate layer disposed over the leading shield layer is provided, the intermediate layer comprising a pole material and a dielectric material. A trench is formed in the dielectric material. A non-magnetic layer in the trench is removed via an ion beam etching process. A seed layer is deposited in the trench and over the pole material. A magnetic material comprising a side shield layer is deposited on at least a portion of the seed layer.
摘要翻译： 公开了一种方法或形成缠绕的屏蔽垂直磁记录写入极。 提供了包括引导屏蔽层和设置在引导屏蔽层之上的中间层的结构，所述中间层包括极材料和电介质材料。 在电介质材料中形成沟槽。 通过离子束蚀刻工艺去除沟槽中的非磁性层。 种子层沉积在沟槽中并在极材料上方。 包含侧屏蔽层的磁性材料沉积在籽晶层的至少一部分上。
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17.发明授权公开(公告)号：US08104166B1
公开(公告)日：2012-01-31
申请号：US10741857
申请日：2003-12-19
申请人： Jinqiu Zhang , Ming Zhao , Mohamad T. Krounbi , Henry Yuan , Lien-Chang Wang
发明人： Jinqiu Zhang , Ming Zhao , Mohamad T. Krounbi , Henry Yuan , Lien-Chang Wang
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for fabricating a read element with leads that overlay a top surface of a sensor of the read element. The method includes forming a mask over a sensor layer, then using the mask to define the sensor from the sensor layer. The mask is then narrowed and a lead layer is formed that overlays both ends of the top surface of the sensor without covering a center portion of the top surface.
摘要翻译： 提供了一种制造读取元件的方法，该元件具有覆盖读取元件的传感器的顶表面的引线。 该方法包括在传感器层上形成掩模，然后使用掩模从传感器层定义传感器。 然后使掩模变窄，并且形成覆盖传感器顶表面两端的引线层，而不覆盖顶表面的中心部分。
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18.发明授权Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US07420837B2
公开(公告)日：2008-09-02
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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19.发明申请High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors 审中-公开利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局公开(公告)号：US20070279967A1
公开(公告)日：2007-12-06
申请号：US11436446
申请日：2006-05-18
申请人： Xiao Luo , Lien-Chang Wang
发明人： Xiao Luo , Lien-Chang Wang
CPC分类号： H01L27/228 , G11C11/16 , H01L29/4238
摘要： A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
摘要翻译： 描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。 该方法和系统包括提供磁性元件并提供选择装置。 磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。 选择装置与磁性元件连接。 选择装置包括其中具有孔的门。 选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。
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公开(公告)号：US07208808B2
公开(公告)日：2007-04-24
申请号：US11159137
申请日：2005-06-23
IPC分类号： H01L29/82 , H01L43/00 , H01L27/14 , H01L29/84 , H01L31/111
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译： 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。
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