Method and system for encoding multi-level pulse amplitude modulated signals using integrated optoelectronic devices
    12.
    发明授权
    Method and system for encoding multi-level pulse amplitude modulated signals using integrated optoelectronic devices 有权
    使用集成光电子器件编码多级脉冲幅度调制信号的方法和系统

    公开(公告)号:US09548811B2

    公开(公告)日:2017-01-17

    申请号:US14196122

    申请日:2014-03-04

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for encoding multi-level pulse amplitude modulated signals using integrated optoelectronics are disclosed and may include generating a multi-level, amplitude-modulated optical signal utilizing an optical modulator driven by two or more of a plurality of electrical input signals. The optical modulator may configure levels in the multi-level amplitude modulated optical signal. Drivers may be coupled to the optical modulator, and the plurality of electrical input signals may be synchronized before being communicated to said drivers. Two or more of said plurality of electrical input signals may be selected utilizing one or more multiplexers. The one or more multiplexers may select an electrical input or a complement of the electrical input. Phase addition may be synchronized in a plurality of optical modulator elements in the optical modulator utilizing one or more electrical delay lines. The optical modulator may be integrated on a single substrate.

    Abstract translation: 公开了使用集成光电子学来编码多级脉冲幅度调制信号的方法和系统,并且可以包括利用由多个电输入信号中的两个或多个驱动的光调制器来产生多电平调幅光信号。 光调制器可以配置多电平调幅光信号中的电平。 驱动器可以耦合到光调制器,并且多个电输入信号可以在被传送到所述驱动器之前被同步。 可以利用一个或多个多路复用器来选择所述多个电输入信号中的两个或更多个。 一个或多个多路复用器可以选择电输入或电输入的补码。 利用一个或多个电延迟线,相位相加可以在光调制器中的多个光调制器元件中同步。 光学调制器可以集成在单个基板上。

    Method And System For Implementing High-Speed Electrical Interfaces Between Semiconductor Dies in Optical Communication Systems

    公开(公告)号:US20180364430A1

    公开(公告)日:2018-12-20

    申请号:US16110587

    申请日:2018-08-23

    Applicant: Luxtera, Inc.

    CPC classification number: G02B6/4274 G02B6/4286

    Abstract: A method and system for implementing high-speed electrical interfaces between semiconductor dies in optical communication systems are disclosed and may include communicating electrical signals between a first die and a second die via coupling pads which may be located in low impedance points in Tx and Rx paths. The electrical signals may be communicated via one or more current-mode, controlled impedance, and/or capacitively-coupled interfaces. The current-mode interface may include a cascode amplifier stage split between source and drain terminals of transistors on the dies. The controlled-impedance interfaces may include transmission line drivers on a first die and transmission lines on a second die. The capacitively-coupled interfaces may include capacitors formed by contact pads on the dies. The coupling pads may be connected via one or more of: wire bonds, metal pillars, solder balls, or conductive resin. The dies may comprise CMOS and may be coupled in a flip-chip configuration.

    Method And System For Hybrid Integration Of Optical Communication Systems
    14.
    发明申请
    Method And System For Hybrid Integration Of Optical Communication Systems 有权
    光通信系统混合集成方法与系统

    公开(公告)号:US20160246018A1

    公开(公告)日:2016-08-25

    申请号:US15144611

    申请日:2016-05-02

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for hybrid integration of optical communication systems may comprise in an optical communication system comprising a silicon photonics die and one or more electronics die bonded to said silicon photonics die utilizing metal interconnects: receiving one or more continuous wave (CW) non-modulated optical signals in said silicon photonics die from an optical source external to said silicon photonics die; modulating said one or more received CW non-modulated optical signals in said silicon photonics die using electrical signals received from said one or more electronics die via said metal interconnects; receiving modulated optical signals in said silicon photonics die from one or more optical fibers coupled to said silicon photonics die; generating electrical signals in said silicon photonics die based on said received modulated optical signals; and communicating said generated electrical signals to at least one of said one or more electronics die via said metal interconnects.

    Abstract translation: 用于光通信系统的混合集成的方法和系统可以包括在光通信系统中,所述光通信系统包括硅光子管芯和利用金属互连结合到所述硅光子管芯的一个或多个电子管芯:接收一个或多个连续波(CW) 所述硅光子学中的光信号从所述硅光子管芯外部的光源射出; 使用经由所述金属互连从所述一个或多个电子管芯接收的电信号来调制所述硅光子管芯中的所述一个或多个接收的CW未调制的光信号; 从耦合到所述硅光子管芯的一个或多个光纤接收所述硅光子管芯中的调制光信号; 基于所述接收的调制光信号在所述硅光子管芯中产生电信号; 以及经由所述金属互连将所述产生的电信号传送到所述一个或多个电子管芯中的至少一个。

    Method And System For Optoelectronics Transceivers Integrated On A CMOS Chip

    公开(公告)号:US20190342006A1

    公开(公告)日:2019-11-07

    申请号:US16460479

    申请日:2019-07-02

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for optoelectronics transceivers of a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers, which may include a guard ring. A CW optical signal may be received from a laser source via optical couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

    Method And System For Optoelectronics Transceivers Integrated On A CMOS Chip

    公开(公告)号:US20180323873A1

    公开(公告)日:2018-11-08

    申请号:US15804680

    申请日:2017-11-06

    Applicant: Luxtera, Inc.

    CPC classification number: H04B10/25 G02B6/1228 G02B6/124 G02B6/4214 G02B6/43

    Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via optical couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

    Method And System For Monolithic Integration of Photonics And Electronics In CMOS Processes
    20.
    发明申请
    Method And System For Monolithic Integration of Photonics And Electronics In CMOS Processes 审中-公开
    CMOS工艺中光子学与电子学的一体化方法与系统

    公开(公告)号:US20150270898A1

    公开(公告)日:2015-09-24

    申请号:US14729826

    申请日:2015-06-03

    Applicant: Luxtera, Inc.

    CPC classification number: H04B10/2575 H01L21/84 H01L27/1203 H04B10/40

    Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include in an optoelectronic transceiver comprising photonic and electronic devices from two complementary metal-oxide semiconductor (CMOS) die with different silicon layer thicknesses for the photonic and electronic devices, the CMOS die bonded together by metal contacts: communicating optical signals and electronic signals to and from said optoelectronic transceiver utilizing a received continuous wave optical signal as a source signal. A first of the CMOS die includes the photonic devices and a second includes the electronic devices. Electrical signals may be communicated between electrical devices to the optical devices utilizing through-silicon vias coupled to the metal contacts. The metal contacts may include back-end metals from a CMOS process. The electronic and photonic devices may be fabricated on SOI wafers, with the SOI wafers being diced to form the CMOS die.

    Abstract translation: 公开了用于在CMOS工艺中单片集成光子学和电子学的方法和系统,并且可以包括在包含来自具有用于光子和电子器件的不同硅层厚度的两个互补金属氧化物半导体(CMOS)裸片的光子和电子器件的光电收发器中, 通过金属触点接合在一起的CMOS芯片:利用接收的连续波光信号作为源信号将光信号和电子信号传送到所述光电收发器和从所述光电收发器传送。 第一个CMOS管芯包括光子器件,第二个包括电子器件。 电信号可以通过耦合到金属触点的通硅通孔在电子器件之间传送到光学器件。 金属触点可以包括来自CMOS工艺的后端金属。 电子和光子器件可以制造在SOI晶片上,SOI晶片被切割以形成CMOS管芯。

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