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公开(公告)号：US20230133016A1
公开(公告)日：2023-05-04
申请号：US17513535
申请日：2021-10-28
Applicant: MACRONIX International Co., Ltd.
Inventor： Shih-Yu Wang , Wen-Tsung Huang , Chih-Wei Hsu
Abstract: A thyristor includes a first transistor and a second transistor. The first transistor has a first end serving as an anode end. The second transistor has a control end coupled to a second end of the first transistor, a first end coupled to a control end of the first transistor, and a second end coupled to the first end of the second transistor and serving as a cathode end.
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公开(公告)号：US11539206B2
公开(公告)日：2022-12-27
申请号：US17164239
申请日：2021-02-01
Applicant: MACRONIX International Co., Ltd.
Inventor： Shih-Yu Wang , Wen-Tsung Huang , Chih-Wei Hsu
IPC: H02H9/04 , H03K17/082
Abstract: An input output circuit and an electrostatic discharge (ESD) protection circuit are provided. The ESD protection circuit is adapted to a charged-device model (CDM). The ESD protection circuit includes a bipolar junction transistor (BJT). The BJT has a first end coupled to an input end of an input buffer and an output end of an output buffer. A second end of the BJT is coupled to a first ground rail. A control end of the BJT is coupled to one of a first power rail, a second power rail, the first ground rail and a second ground rail.
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公开(公告)号：US10304820B1
公开(公告)日：2019-05-28
申请号：US15941235
申请日：2018-03-30
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Shih-Yu Wang , Wen-Tsung Huang
Abstract: An ESD protection apparatus includes first and second parasitic bipolar junction transistors having different majority carriers formed in a substrate and an ESD protection device having a grounding end and a connecting end connected to the first parasitic bipolar junction transistor. When an ESD voltage applied to the ESD protection apparatus is greater than a ground voltage, a first current is grounded by passing through one of a first assembled protecting circuit including the first parasitic bipolar junction transistor and the ESD protection device and a second assembled protecting circuit including the first and the second parasitic bipolar junction transistor; and when an ESD voltage applied to the ESD protection apparatus is less than a ground voltage, a second current coming from a ground is directed to a voltage source by passing through the other one of the first assembled protecting circuit and the second assembled protecting circuit.
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公开(公告)号：US10147716B2
公开(公告)日：2018-12-04
申请号：US15086119
申请日：2016-03-31
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Shih-Yu Wang , Ming-Yin Lee , Wen-Tsung Huang
Abstract: An ESD protection apparatus includes a semiconductor substrate, a first well, a second well, a first doping region, a second doping region, a third doping region and a fourth doping region. The first well and the second well respectively having a first conductivity and a second conductivity are disposed in the semiconductor substrate. The first doping region having the second conductivity is disposed in the first well. The second doping region having the first conductivity is at least partially disposed in the first well and surrounds the first doping region. The third doping region and the fourth doping region respectively having the first conductivity and the second conductivity are disposed in the second well. The first doping region, the third doping region, the first well and the second well are integrated to form a first parasitic BJT and a second parasitic BJT that have different majority carriers.
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公开(公告)号：US20160241021A1
公开(公告)日：2016-08-18
申请号：US14624409
申请日：2015-02-17
Applicant: MACRONIX International Co., Ltd.
Inventor： Shih-Yu Wang , Chieh-Wei He , Yao-Wen Chang , Tao-Cheng Lu
IPC: H02H9/04
CPC classification number: H02H9/046
Abstract: An electrostatic discharge protection device that includes a plurality of voltage drop elements, an impedance element, a driving circuit, and a clamping circuit is provided. The voltage drop elements are electrically connected in series between a first line and a node, and the voltage drop elements are configured to define an activating voltage. If a signal from the first line is greater than the activating voltage, the voltage drop elements conduct the first line to the node in response to the signal from the first line. The impedance element is electrically connected between the node and a second line. The driving circuit amplifies a control signal from the node and accordingly generates a driving signal. The clamping circuit determines whether to generate a discharging path between the first line and the second line according to the driving signal.
Abstract translation: 提供了包括多个电压降元件，阻抗元件，驱动电路和钳位电路的静电放电保护器件。 电压降元件在第一线路和节点之间串联电连接，并且电压降元件被配置为限定激活电压。 如果来自第一行的信号大于激活电压，则电压降元件响应于来自第一行的信号将第一行传导到节点。 阻抗元件电连接在节点和第二线之间。 驱动电路放大来自节点的控制信号，从而产生驱动信号。 钳位电路根据驱动信号确定是否在第一线路与第二线路之间产生放电路径。
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Patent Agency Ranking
公开(公告)号：US20140092504A1
公开(公告)日：2014-04-03
申请号：US13573738
申请日：2012-10-03
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Shih-Yu Wang , Yao-Wen Chang , Tao-Cheng Lu
IPC: H02H9/04
CPC classification number: H02H9/044 , H01L27/0262 , H02H9/046
Abstract: An electrostatic discharge protection device including a silicon-controlled rectifier and a path switching circuit is provided. The silicon-controlled rectifier includes a first connection terminal, a second connection terminal, a first control terminal and a second control terminal, wherein the first connection terminal and the second connection terminal are respectively connected to a first line and a second line. The path switching circuit is electrically connected to the first line, the first control terminal and the second control terminal. When an input signal is supplied to the first line, the path switching circuit provides a first current path from the first line to the first control terminal in response to the input signal. When an electrostatic pulse is appeared on the first line, the path switching circuit provides a second current path from the first control terminal to the second control terminal in response to the electrostatic pulse.
Abstract translation: 提供一种包括硅控整流器和路径切换电路的静电放电保护装置。 硅控整流器包括第一连接端子，第二连接端子，第一控制端子和第二控制端子，其中第一连接端子和第二连接端子分别连接到第一线路和第二线路。 路径切换电路与第一线路，第一控制端子和第二控制端子电连接。 当输入信号被提供给第一行时，路径切换电路响应于输入信号提供从第一行到第一控制终端的第一电流路径。 当在第一线路上出现静电脉冲时，路径切换电路响应于静电脉冲提供从第一控制端子到第二控制端子的第二电流路径。
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公开(公告)号：US11699745B2
公开(公告)日：2023-07-11
申请号：US17513535
申请日：2021-10-28
Applicant: MACRONIX International Co., Ltd.
Inventor： Shih-Yu Wang , Wen-Tsung Huang , Chih-Wei Hsu
CPC classification number: H01L29/7408 , H01L29/102 , H01L29/1016
Abstract: A thyristor includes a first transistor and a second transistor. The first transistor has a first end serving as an anode end. The second transistor has a control end coupled to a second end of the first transistor, a first end coupled to a control end of the first transistor, and a second end coupled to the first end of the second transistor and serving as a cathode end.
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公开(公告)号：US20220247171A1
公开(公告)日：2022-08-04
申请号：US17164239
申请日：2021-02-01
Applicant: MACRONIX International Co., Ltd.
Inventor： Shih-Yu Wang , Wen-Tsung Huang , Chih-Wei Hsu
IPC: H02H9/04 , H03K17/082
Abstract: An input output circuit and an electrostatic discharge (ESD) protection circuit are provided. The ESD protection circuit is adapted to a charged-device model (CDM). The ESD protection circuit includes a bipolar junction transistor (BJT). The BJT has a first end coupled to an input end of an input buffer and an output end of an output buffer. A second end of the BJT is coupled to a first ground rail. A control end of the BJT is coupled to one of a first power rail, a second power rail, the first ground rail and a second ground rail.
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公开(公告)号：US20170287899A1
公开(公告)日：2017-10-05
申请号：US15084557
申请日：2016-03-30
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Shih-Yu Wang , Ming-Yin Lee , Wen-Tsung Huang
CPC classification number: H01L27/0277 , G11C7/1084 , G11C7/24 , G11C2207/105 , H01L23/50 , H01L27/0629 , H01L27/105 , H01L29/0688 , H01L29/1079 , H01L29/1095 , H02H9/046
Abstract: An ESD protection apparatus includes a semiconductor substrate, a first gate structure, a first doping region, a second doping region and a third doping region. The semiconductor substrate has a doping well with a first conductivity one end of which is grounded. The first gate structure is disposed on the doping well. The first doping region having a second conductivity, is disposed in the doping well and adjacent to the first gate structure, and is electrically connected to a pad. The second doping region having the second conductivity is disposed in the doping well and adjacent to the first gate structure. The third doping region having the first conductivity is disposed in the doping well and forms a P/N junction interface with the second doping region, wherein the second doping region and the third doping region respectively have a doping concentration substantially greater than that of the doping well.
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公开(公告)号：US20170287895A1
公开(公告)日：2017-10-05
申请号：US15086119
申请日：2016-03-31
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Shih-Yu Wang , Ming-Yin Lee , Wen-Tsung Huang
CPC classification number: H01L27/0262 , H01L29/0653 , H01L29/7436 , H02H9/04
Abstract: An ESD protection apparatus includes a semiconductor substrate, a first well, a second well, a first doping region, a second doping region, a third doping region and a fourth doping region. The first well and the second well respectively having a first conductivity and a second conductivity are disposed in the semiconductor substrate. The first doping region having the second conductivity is disposed in the first well. The second doping region having the first conductivity is at least partially disposed in the first well and surrounds the first doping region. The third doping region and the fourth doping region respectively having the first conductivity and the second conductivity are disposed in the second well. The first doping region, the third doping region, the first well and the second well are integrated to form a first parasitic BJT and a second parasitic BJT that have different majority carriers.
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