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公开(公告)号：US20220209503A1
公开(公告)日：2022-06-30
申请号：US17138623
申请日：2020-12-30
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir lakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , ltshak Kalifa
Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.
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公开(公告)号：US20210313770A1
公开(公告)日：2021-10-07
申请号：US16841824
申请日：2020-04-07
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Elad Mentovich , Tamir Sharkaz
Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.
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Patent Agency Ranking
公开(公告)号：US20240136795A1
公开(公告)日：2024-04-25
申请号：US18211710
申请日：2023-06-19
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir lakovlev , Tamir Sharkaz , Elad Mentovich
CPC classification number: H01S5/18347 , H01S5/18311 , H01S5/18377 , H01S5/2275 , H01S5/3095 , H01S5/3401 , H01S5/423
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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公开(公告)号：US11789222B2
公开(公告)日：2023-10-17
申请号：US17341645
申请日：2021-06-08
Applicant: Mellanox Technologies, Ltd.
Inventor： Dimitrios Kalavrouziotis , Sylvie Rockman , Elad Mentovich , Tamir Sharkaz , Yaakov Gridish , Anna Sandomirsky
CPC classification number: G02B6/4277 , G02B6/4206 , H04B10/501
Abstract: Optical components and associated methods of manufacturing are provided. An example optical component includes a body defined by an optical interposer substrate and a passivation layer applied to the optical interposer substrate. The optical interposer substrate defines a first surface of the body, and the passivation layer defines a second surface of the body opposite the first surface. The passivation layer includes a metallic shielding element configured to prevent interference between the first surface and the second surface. The optical component further includes an opening extending from the second surface to the optical interposer substrate, the opening defining an optical path through the passivation layer. The optical interposer substrate receives an optical signal from an optical transmitter supported by the second surface via the optical path.
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公开(公告)号：US11588299B2
公开(公告)日：2023-02-21
申请号：US16841824
申请日：2020-04-07
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Elad Mentovich , Tamir Sharkaz
IPC: H01S5/18 , H01S5/183 , H01S5/042 , H01S5/30 , H01S5/00 , H01S5/20 , H01S5/02 , H01S5/343 , H01L21/18 , H01L21/02 , H01L21/306 , H01L21/283 , H01L21/32
Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.
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公开(公告)号：US20220246781A1
公开(公告)日：2022-08-04
申请号：US17249140
申请日：2021-02-22
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa , Paraskevas Bakopoulos
IPC: H01L31/105 , H01L31/0304
Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.
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17.发明授权公开(公告)号：US11378765B2
公开(公告)日：2022-07-05
申请号：US16928045
申请日：2020-07-14
Applicant: Mellanox Technologies, Ltd.
Inventor： Donald Becker , Dimitrios Kalavrouziotis , Boaz Atias , Itshak Kalifa , Tamir Sharkaz , Elad Mentovich
Abstract: A universal multi-core fiber (UMCF) interconnect includes multiple optical fiber cores and a shared cladding. Each of the optical fiber cores is configured to convey first optical communication signals having a first carrier wavelength using multi-mode propagation, and to convey second optical communication signals having a second carrier wavelength using single-mode propagation. The shared cladding encloses the multiple optical fiber cores.
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