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公开(公告)号：US5695819A
公开(公告)日：1997-12-09
申请号：US641703
申请日：1996-05-02
IPC分类号： C23C16/24
CPC分类号： C23C16/24
摘要： A thermal decomposition CVD method is provided for forming a polysilicon layer over a stepped surface on a semiconductor wafer. The method includes introducing a continuous flow of silicon precursor gases into a vacuum chamber, and adjusting the flow rates and concentrations of the precursor gases, adjusting the temperature and adjusting the pressure within the vacuum chamber so as to control the growth rate of the polysilicon layer on the substrate to between about 500 angstroms/minute and about 2000 angstroms/minute. In a preferred embodiment of the invention, the growth rate of the polysilicon layer is controlled by adjusting the precursor gas flow rates, the temperature and the pressure to between about 1000 angstroms/minute and about 1500 angstroms/minute with the result that the average step coverage of the polysilicon layer is greater than about 95 percent.
摘要翻译： 提供了用于在半导体晶片上的台阶表面上形成多晶硅层的热分解CVD方法。 该方法包括将连续的硅前体气体流引入真空室，调节前体气体的流速和浓度，调节温度并调节真空室内的压力，以便控制多晶硅层的生长速率 在基底上至约500埃/分钟至约2000埃/分钟。 在本发明的优选实施例中，通过将前体气体流速，温度和压力调节至约1000埃/分钟至约1500埃/分钟来控制多晶硅层的生长速率，结果是平均步长 多晶硅层的覆盖率大于约95％。
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公开(公告)号：US5599397A
公开(公告)日：1997-02-04
申请号：US625271
申请日：1996-03-27
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.
摘要翻译： 本公开涉及一种用于在晶片上沉积材料层的装置。 该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。 感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。 气体入口歧管位于侧壁中。 歧管有三个入口。 一个端口通过通向沉积室的下部的通道连接。 其他两个端口通过通向沉积室的上部的通道连接。 气体供给系统连接到入口端口，以便将相同的气体提供到沉积室的下部以及沉积室的上部。 这允许在将晶片上的层涂覆之前，使基座板的背面涂覆有要涂覆在晶片上的相同材料的层。
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13.发明授权公开(公告)号：US08551578B2
公开(公告)日：2013-10-08
申请号：US12255865
申请日：2008-10-22
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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14.发明申请METHOD INCLUDING MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION FOR MRAM FABRICATION 审中-公开包括使用等离子体植入MRAM制造的磁畴图案的方法公开(公告)号：US20090201722A1
公开(公告)日：2009-08-13
申请号：US12355612
申请日：2009-01-16
CPC分类号： G11B5/855 , G11C11/161 , H01L27/222
摘要： A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices.
摘要翻译： 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。 该过程可用于制造包括磁阻随机存取存储器件的存储器件。
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15.发明授权Depositing polysilicon films having improved uniformity and apparatus therefor 失效沉积具有改进的均匀性的多晶硅膜及其装置公开(公告)号：US06402850B1
公开(公告)日：2002-06-11
申请号：US08300111
申请日：1994-09-02
IPC分类号： C23C1600
CPC分类号： C23C16/4585 , C23C16/45591 , C30B25/14
摘要： A barrier to prevent reactant gases from reaching the surfaces of a susceptor support for a substrate upon which polysilicon films are to be deposited provides improved uniformity of the depositing film across the substrate, and prevents substrate-to-substrate variations during sequential depositions. A suitable barrier includes a preheat ring extension that mates with an extension of the susceptor support.
摘要翻译： 防止反应物气体到达沉积多晶硅膜的衬底的基座支撑体的表面的屏障提供了沉积薄膜穿过衬底的改进的均匀性，并且防止了在顺序沉积期间的衬底对衬底的变化。 合适的屏障包括与基座支撑件的延伸部分配合的预热环延伸部。
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公开(公告)号：US5645646A
公开(公告)日：1997-07-08
申请号：US752742
申请日：1996-11-14
IPC分类号： H01L21/687 , C23C16/00
CPC分类号： H01L21/6875 , H01L21/68735
摘要： An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.
摘要翻译： 用于在晶片上沉积材料的设备包括安装在沉积室中的基座板。 该室具有气体入口和排气。 提供用于加热感受板的装置。 基座板具有从其顶表面突出的多个支撑柱。 支撑柱布置成在其上支撑晶片，其中晶片的后表面与基座板的表面间隔开。 支撑柱具有长度，使得晶片与基座板间隔足以允许沉积气体在晶片和基座板之间流动和/或扩散的距离，但仍允许从基座板到晶片的热传递 主要是通过传导。 基座板还设置有诸如保持销或凹部的装置，以防止位于支撑柱上的晶片的横向移动。
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公开(公告)号：US5551982A
公开(公告)日：1996-09-03
申请号：US221118
申请日：1994-03-31
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.
摘要翻译： 本公开涉及一种用于在晶片上沉积材料层的装置。 该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。 感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。 气体入口歧管位于侧壁中。 歧管有三个入口。 一个端口通过通向沉积室的下部的通道连接。 其他两个端口通过通向沉积室的上部的通道连接。 气体供给系统连接到入口端口，以便将相同的气体提供到沉积室的下部以及沉积室的上部。 这允许在将晶片上的层涂覆之前，使基座板的背面涂覆有要涂覆在晶片上的相同材料的层。
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18.发明授权
公开(公告)号：US5112764A
公开(公告)日：1992-05-12
申请号：US578106
申请日：1990-09-04
IPC分类号： H01L29/78 , H01L21/322 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/3221 , H01L29/78621 , H01L29/78675 , Y10S148/15
摘要： A method of manufacturing a thin film transistor having a low leakage current including depositing a layer of silicon oxide on a semiconductor substrate or on a layer of silicon nitrate deposited on a glass substrate, depositing a polysilicon layer, at a temperature of 520.degree.-570.degree. C., on the silicon oxide layer, annealing this polysilicon layer in a nitrogen atmosphere at a temperature of less than 650.degree. C., forming islands in this polysilicon layer, forming a gate oxide layer on one of the islands by oxidizing the island under high pressure at a temperature below 650.degree. C., forming a gate from a heavily doped polysilicon layer deposited on the gate oxide layer, forming lightly doped source and drain areas laterally adjacent to the gate, providing a thin layer of silicon oxide on the gate and the source and drain access, heavily doping areas of the first silicon layer adjacent to the source and drain areas, annealing the source and drain areas at a temperature below 650.degree. C. and hydrogenating the resistive transistor with a hydrogen plasma.
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公开(公告)号：US08535766B2
公开(公告)日：2013-09-17
申请号：US12255833
申请日：2008-10-22
CPC分类号： G11B5/84 , C23C14/185 , C23C14/48 , C23C14/5826 , C23C14/5833 , G11B5/855 , H01J2237/3365
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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公开(公告)号：US20100098873A1
公开(公告)日：2010-04-22
申请号：US12255833
申请日：2008-10-22
IPC分类号： C23C14/48
CPC分类号： G11B5/84 , C23C14/185 , C23C14/48 , C23C14/5826 , C23C14/5833 , G11B5/855 , H01J2237/3365
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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