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    PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION
    1.
    发明申请
    PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION 有权
    使用能量离子和热激发形成磁薄膜的方法

    公开(公告)号：US20100096256A1

    公开(公告)日：2010-04-22

    申请号：US12255865

    申请日：2008-10-22

    申请人： OMKARAM NALAMASU ,  Steven Verhaverbeke ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

    发明人： OMKARAM NALAMASU ,  Steven Verhaverbeke ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

    IPC分类号： C23F1/02

    CPC分类号： G11B5/84 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  H01F41/34

    摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

    摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

    PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS
    3.
    发明申请
    PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS 有权
    使用能量离子对磁薄膜进行绘图

    公开(公告)号：US20100098873A1

    公开(公告)日：2010-04-22

    申请号：US12255833

    申请日：2008-10-22

    申请人： STEVEN VERHAVERBEKE ,  Omkaram Nalamasu ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

    发明人： STEVEN VERHAVERBEKE ,  Omkaram Nalamasu ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

    IPC分类号： C23C14/48

    CPC分类号： G11B5/84 ,  C23C14/185 ,  C23C14/48 ,  C23C14/5826 ,  C23C14/5833 ,  G11B5/855 ,  H01J2237/3365

    摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

    摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

    Electrostatic chuck cleaning during semiconductor substrate processing
    5.
    发明授权
    Electrostatic chuck cleaning during semiconductor substrate processing 失效
    半导体衬底处理过程中的静电吸盘清洗

    公开(公告)号：US07993465B2

    公开(公告)日：2011-08-09

    申请号：US11470772

    申请日：2006-09-07

    申请人： Dean C. Jennings ,  Majeed Foad ,  Jonathon Simmons

    发明人： Dean C. Jennings ,  Majeed Foad ,  Jonathon Simmons

    IPC分类号： B08B5/00

    CPC分类号： H01L21/67028 ,  B08B7/00 ,  H01J2237/022 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/6831

    摘要： Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.

    摘要翻译： 提供了在处理室中清洁静电卡盘的方法和装置。 该方法包括将包含反应剂的背面气体流入处理室中的区域，该区域由静电卡盘或清洁站的表面与基底表面之间的空间限定。 用反应剂蚀刻静电卡盘的表面以除去碎屑。 还提供了一种用于清洁静电卡盘的设备，该设备包括：处理室; 具有通过处理室的壁布置的延伸臂; 固定在细长臂上的静电卡盘; 位于细长臂的范围内的清洁站; 以及可操作地连接到清洁站的反应气体源。

    Method of ion implantation to reduce transient enhanced diffusion
    6.
    发明申请
    Method of ion implantation to reduce transient enhanced diffusion 有权

    公开(公告)号：US20060160338A1

    公开(公告)日：2006-07-20

    申请号：US11302499

    申请日：2005-12-14

    申请人： Houda Graoui ,  Majeed Foad ,  Amir Al-Bayati

    发明人： Houda Graoui ,  Majeed Foad ,  Amir Al-Bayati

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268

    摘要： A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.

    Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
    9.
    发明授权
    Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements 有权
    用于使用关键尺寸测量来控制半导体晶圆工艺的方法，系统和介质

    公开(公告)号：US07225047B2

    公开(公告)日：2007-05-29

    申请号：US10100184

    申请日：2002-03-19

    申请人： Amir Al-Bayati ,  Babak Adibi ,  Majeed Foad ,  Sasson Somekh

    发明人： Amir Al-Bayati ,  Babak Adibi ,  Majeed Foad ,  Sasson Somekh

    IPC分类号： G06F19/00 ,  G01N37/00

    CPC分类号： H01L21/67253 ,  H01L22/20 ,  Y10T29/41

    摘要： Methods, systems, and mediums of controlling a semiconductor manufacturing process are described. The method comprises the steps of measuring at least one critical dimension of at least one device being fabricated on at least one of the plurality of wafers, determining at least one process parameter value on the at least one measured dimension, and controlling at least one semiconductor manufacturing tool to process the at least one of the plurality of wafers based on the at least one parameter value. A variation in the at least one critical dimension causes undesirable variations in performance of the at least one device, and at least one process condition is directed to controlling the processing performed on the plurality of wafers. The at least one manufacturing tool includes at least one of an implanter tool and an annealing tool.

    摘要翻译： 描述了控制半导体制造工艺的方法，系统和介质。 该方法包括以下步骤：测量在至少一个晶片上制造的至少一个器件的至少一个临界尺寸，确定至少一个测量尺寸上的至少一个工艺参数值，以及控制至少一个半导体 基于所述至少一个参数值来处理所述多个晶片中的所述至少一个的制造工具。 所述至少一个关键尺寸的变化导致所述至少一个装置的性能的不期望的变化，并且至少一个处理条件涉及控制在所述多个晶片上执行的处理。 所述至少一个制造工具包括注入机工具和退火工具中的至少一个。