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    Vertical Cell Edge Junction Magnetoelectronic Device Family
    12.
    发明申请
    Vertical Cell Edge Junction Magnetoelectronic Device Family 有权
    垂直电池边缘结电磁器件系列

    公开(公告)号：US20100148288A1

    公开(公告)日：2010-06-17

    申请号：US12622366

    申请日：2009-11-19

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： H01L29/82

    CPC分类号： G01R33/098 ,  B82Y25/00 ,  G11B5/398 ,  G11B2005/0018 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01L43/08

    摘要： Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element. The devices also employ a new operational geometry in which the transport of bias current is in the film plane of at least one of the thin film elements, but is substantially perpendicular to the film plane of at least one of the thin film elements. Additionally, any of the variety magnetoelectronic devices (e.g., current-in-plane spin valves, current-perpendicular-to-the-plane spin valves, magnetic tunnel junctions, and lateral spin valves can be fabricated using these features.

    摘要翻译： 磁电子器件通过将一个铁磁性薄膜元件的边缘与第二铁磁性或非磁性薄膜元件的顶部或底部部分接合来制造。 这些器件还采用新的工作几何形状，其中偏置电流的传输在至少一个薄膜元件的膜平面内，但基本上垂直于至少一个薄膜元件的膜平面。 另外，可以使用这些特征来制造各种各样的磁电子器件（例如，平面内自旋阀，电流 - 垂直于平面的自旋阀，磁隧道结和横向自旋阀）中的任何一种。

    Spin based device with low transmission barrier
    13.
    发明授权
    Spin based device with low transmission barrier 有权
    具有低传输屏障的旋转装置

    公开(公告)号：US07215570B2

    公开(公告)日：2007-05-08

    申请号：US11373667

    申请日：2006-03-09

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11C11/00

    CPC分类号： H01L43/06 ,  G01R33/06 ,  G01R33/1284 ,  G11B5/378 ,  G11C11/16 ,  G11C11/18 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L29/66984 ,  H03K19/18

    摘要： An electron spin-based device includes ferromagnetic layers with different coercivities, such that one of such layers is responsive to a magnetic field and the other is fixed. A value of an impedance in the spin based device for a spin polarized current varies in accordance with a relationship between a first changeable magnetization state and a second non-changeable magnetization state associated with such ferromagnetic layers.

    摘要翻译： 电子自旋基装置包括具有不同矫顽力的铁磁层，使得这些层中的一个对磁场有响应，另一个是固定的。 用于自旋极化电流的基于自旋的装置中的阻抗的值根据与这种铁磁层相关联的第一可变磁化状态和第二不可变磁化状态之间的关系而变化。

    Hybrid Hall vector magnetometer
    15.
    发明授权
    Hybrid Hall vector magnetometer 失效
    混合霍尔矢量磁强计

    公开(公告)号：US07064542B2

    公开(公告)日：2006-06-20

    申请号：US11172663

    申请日：2005-07-01

    申请人： Mark B. Johnson ,  Michael Miller ,  Brian Bennett

    发明人： Mark B. Johnson ,  Michael Miller ,  Brian Bennett

    IPC分类号： G01R33/07

    CPC分类号： G01R33/07 ,  Y10S977/853 ,  Y10S977/865

    摘要： A modified hybrid Hall effect device is provided which is the combination of a conventional Hall effect device and a second Hall effect device having a Hall plate coupled to a ferromagnetic layer. The hybrid Hall effect device can be used to determine the independent magnetic field vector components comprising a vector magnetic field, such as for determining the x and the z components of a magnetic field, or for measuring the total magnitude of a vector magnetic field of any orientation. The modified Hall Effect device can be adapted for use as a magnetic field sensor for the detection of macroscopic objects that have associated magnetic fields, or for microscopic objects that have been tagged by microscopic magnetic particles. In one specific form, a plurality of hybrid Hall devices are electrically connected together to form an array in which a plurality of rows of hybrid Hall devices are electrically coupled to each other along a current axis, and the array is used for the detection of microscopic objects.

    摘要翻译： 提供了一种改进的混合霍尔效应装置，它是常规霍尔效应装置和具有耦合到铁磁层的霍尔板的第二霍尔效应装置的组合。 可以使用混合霍尔效应装置来确定包括矢量磁场的独立磁场矢量分量，例如用于确定磁场的x和z分量，或用于测量任意的矢量磁场的总大小 方向。 修改的霍尔效应装置可以适用于用于检测具有相关磁场的宏观物体的磁场传感器，或用于由微观磁性颗粒标记的微观物体。 在一个具体形式中，多个混合霍尔器件电连接在一起以形成阵列，其中多行混合霍尔器件沿着电流轴彼此电耦合，并且该阵列用于微观检测 对象

    High density and speed magneto-electronic memory for use in computing system
    17.
    发明授权
    High density and speed magneto-electronic memory for use in computing system 失效
    用于计算系统的高密度和高速磁电存储器

    公开(公告)号：US06169687A

    公开(公告)日：2001-01-02

    申请号：US09005855

    申请日：1998-01-12

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11C1114

    CPC分类号： G11C11/16 ,  G11B5/378 ,  G11C11/18 ,  G11C11/5607 ,  H01L29/66984 ,  H03K19/18

    摘要： A new type of magneto-electronic element, such as a spin transistor or hybrid hall effect device, can be used to construct memory systems to replace conventional cache, primary, secondary and long term (archival) storage. The magneto-electronic element is non-volatile, and has switching speeds and integration densities that compare favorably with conventional semiconductor random access memories, such as DRAM. In another embodiment, an integrated memory system may be constructed that synthesizes one or more previously disparate levels of conventional memory (i.e., a combination of primary and secondary storage) so that memory organization is further simplified and performance and cost are improved.

    摘要翻译： 可以使用新型的电子电子元件，例如自旋晶体管或混合霍尔效应器件来构造存储器系统，以代替传统的缓存，一级，二级和长期（档案）存储。 磁电元件是非易失性的，并具有与常规半导体随机存取存储器（例如DRAM）相比较的开关速度和积分密度。 在另一个实施例中，可以构建集成存储器系统，其合成一个或多个先前不同级别的常规存储器（即，主存储器和辅助存储器的组合），从而进一步简化存储器组织并提高性能和成本。

    Hybrid hall effect memory device and method of operation
    18.
    发明授权
    Hybrid hall effect memory device and method of operation 失效
    混合霍尔效应记忆装置及其操作方法

    公开(公告)号：US6064083A

    公开(公告)日：2000-05-16

    申请号：US806028

    申请日：1997-02-24

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11B5/37 ,  G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H01L29/66 ,  H01L43/06 ,  H03K19/18 ,  H01L29/82 ,  H01L43/00

    CPC分类号： H01L29/66984 ,  G11C11/16 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/065 ,  H03K19/18 ,  G11B5/378

    摘要： A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer. The magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The memory device can also be fabricated to include an associated transistor (or other suitable switch) that functions as an isolation element to reduce cross-talk and as a selector for the output of the device when such is used in a memory array. This latter arrangement also permits a bias supply to be applied to each cell in the array, increasing the output signal level, and the signal to noise ratio. A high resistance element such as a resistor or diode can also be used as the isolation element depending on the particular application. In a preferred embodiment, the hybrid memory device and associated selector are combined and integrally fabricated using conventional semiconductor processing techniques to increase the integration density of memory arrays using such devices.

    摘要翻译： 混合存储器件结合了铁磁层和霍尔效应器件。 铁磁层磁耦合到霍尔板的一部分，当这种板被适当地偏置时，可以产生其值与铁磁层的磁化状态直接相关的霍尔效应信号。 铁磁层的磁化状态可以被设置为对应于要存储在混合存储器件中的数据项的不同值。 磁化状态是非易失性的，并且写入电路可以耦合到铁磁层以将磁化状态重置或改变为不同的值。 存储器件还可以被制造成包括用作隔离元件的相关联的晶体管（或其他合适的开关），以减少串扰，并且当用于存储器阵列时用作输出器件的选择器。 后一种布置还允许将偏置电源施加到阵列中的每个单元，增加输出信号电平和信噪比。 根据具体应用，也可以使用诸如电阻器或二极管的高电阻元件作为隔离元件。 在优选实施例中，使用常规半导体处理技术将混合存储器件和相关选择器组合并整体制造，以增加使用这种器件的存储器阵列的集成密度。

    MICROSENSOR COATED ARTICLE
    20.
    发明申请
    MICROSENSOR COATED ARTICLE 审中-公开

    公开(公告)号：US20190154612A1

    公开(公告)日：2019-05-23

    申请号：US16196640

    申请日：2018-11-20

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G01N27/12 ,  G01N21/77

    摘要： A coated article includes microsensor elements incorporated on a surface or embedded in a body, which elements are adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be applied with liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions.