公开(公告)号：US06452091B1

公开(公告)日：2002-09-17

申请号：US09614548

申请日：2000-07-12

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： H01L2102

CPC分类号： H01L21/76259 ,  H01L21/304 ,  Y10T156/1002 ,  Y10T156/1028 ,  Y10T156/1041 ,  Y10T156/1048 ,  Y10T156/1049

摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.

摘要翻译： 进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于 剥离的单晶。 该单晶体用于太阳能电池和图像显示元件的驱动电路部件。 提供了当从基板剥离时防止单晶层的质量和产量降低的方法。 制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。 因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

公开(公告)号：US06258666B1

公开(公告)日：2001-07-10

申请号：US09333019

申请日：1999-06-15

申请人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： H01L21336

CPC分类号： H01L21/76251 ,  C23C16/01 ,  C30B29/60 ,  C30B33/00 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S156/93 ,  Y10S156/942 ,  Y10T156/1179 ,  Y10T156/1978

摘要： Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.

摘要翻译： 提供一种制造半导体薄膜的方法，其中当形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上时，支撑构件旋转，从而将半导体薄膜剥离离开 基质。 还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。 这些提供了将半导体薄膜远离基板剥离而不损坏的方法以及不污染保持基板的方法。

公开(公告)号：US06429035B2

公开(公告)日：2002-08-06

申请号：US09198263

申请日：1998-11-24

申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： H01L2120

CPC分类号： H01L27/1296 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/66765 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined concentration into indium melted in a carbon boat or a quartz crucible, supersaturating the melt, and submerging a substrate into the melt, thereby growing a silicon crystal containing a dopant element. This method can provide a method of growing a thin film of crystalline silicon having a high crystallinity and a dopant concentration favorably controlled, thereby serving for mass production of inexpensive solar cells which have high performance as well as image displays which have high contrast and are free from color ununiformity.

摘要翻译： 在液相中生长单晶硅的方法包括通过将以预定浓度的含有硼，铝，磷或砷的硅的固体溶解在在碳舟或石英坩埚中熔化的铟中来制备熔体，使熔体过饱和，以及 将衬底浸入熔体中，从而生长含有掺杂元素的硅晶体。 该方法可以提供一种生长具有高结晶度和有利于控制的掺杂剂浓度的晶体硅薄膜的方法，从而用于批量生产具有高性能的廉价太阳能电池以及具有高对比度且无游离的图像显示器 从颜色不均匀。

公开(公告)号：US06391108B2

公开(公告)日：2002-05-21

申请号：US09208377

申请日：1998-12-10

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： C30B1900

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/06

摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.

摘要翻译： 提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到 溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。 还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有 至少硅原子进入溶剂。 这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

公开(公告)号：US06231667B1

公开(公告)日：2001-05-15

申请号：US09200867

申请日：1998-11-27

申请人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

发明人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

IPC分类号： C30B1906

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06

摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.

摘要翻译： 浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作 在退火室中进行与上述基板不同的另一基板。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为 在退火室中进行。 这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。 此外，还提供了液相生长方法。

公开(公告)号：US06802926B2

公开(公告)日：2004-10-12

申请号：US09813137

申请日：2001-03-21

申请人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： B32B3100

CPC分类号： H01L21/76251 ,  C23C16/01 ,  C30B29/60 ,  C30B33/00 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S156/93 ,  Y10S156/942 ,  Y10T156/1179 ,  Y10T156/1978

摘要： A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.

摘要翻译： 提供一种制造半导体薄膜的方法。 虽然形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上，但是支撑构件被旋转，从而使半导体薄膜远离基板。 还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。 根据这些方法，可以将半导体薄膜从衬底上剥离而不会损坏并且保持衬底而没有污染。

公开(公告)号：US06566235B2

公开(公告)日：2003-05-20

申请号：US09819680

申请日：2001-03-29

申请人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  H01L21/3083 ,  H01L21/76259 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps. This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly. Also disclosed is a process for producing a solar cell by the above process.

摘要翻译： 一种半导体部件的制造方法，其特征在于，包括：通过在其表面部分形成多孔第一部件而形成多孔层的第一工序，使一部分区域或多个区域形成多孔; 将形成在所述多孔层上的半导体层和未形成多孔的所述第一构件表面接合到第二构件以形成接合结构的第二步骤; 以及在多孔层的一部分分离结合结构的第三步骤。 第一个构件是多孔的，留下一些不是多孔的区域或区域，使得多孔层在第一和第二步骤中在多孔层的部分处不引起任何分离。该方法可以使半导体层与单个层不可分离 在将半导体层转移到支撑构件侧的分离之前的晶体硅构件，而不严格地设定阳极氧化条件。还公开了通过上述方法制造太阳能电池的方法。

公开(公告)号：US06664169B1

公开(公告)日：2003-12-16

申请号：US09586887

申请日：2000-06-05

申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

IPC分类号： H01L2176

CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

公开(公告)号：US06448155B1

公开(公告)日：2002-09-10

申请号：US09592559

申请日：2000-06-12

申请人： Yukiko Iwasaki ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

发明人： Yukiko Iwasaki ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

IPC分类号： H01L21301

CPC分类号： H01L21/6835 ,  H01L21/304 ,  H01L21/6836 ,  H01L21/76259 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2221/68368

摘要： When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.

摘要翻译： 当通过基板上的分离层形成的半导体层被支撑构件支撑并且然后将拉力施加在支撑构件上以机械地破坏分离层从而形成薄膜半导体时，基板被真空保持 和/或薄膜外延层的静电附着和分离从基板边缘以外的区域开始。 这提供了一种能够以良好的产率获得具有优异特性的薄膜外延层的方法，并且允许基板的重复使用，而不会在产生半导体时由于克服基板的附着力而产生的分离力而引起基板的提升 基材和太阳能电池。

公开(公告)号：US06818104B2

公开(公告)日：2004-11-16

申请号：US10669002

申请日：2003-09-24

申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

IPC分类号： C25D1700

CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。