Coloring resin composition and molded articles
    13.
    发明授权
    Coloring resin composition and molded articles 有权
    着色树脂组合物和模塑制品

    公开(公告)号:US06566432B2

    公开(公告)日:2003-05-20

    申请号:US09880936

    申请日:2001-06-15

    IPC分类号: C08L506

    CPC分类号: C08J3/226 C08J2423/00

    摘要: Disclosed is a coloring resin composition comprising a dispersing agent, a pigment and a thermoplastic resin, in which the dispersing agent is expressed by the following Formula 1 and the thermoplastic resin is metallocene polyolefin: CnH2n+1(OCH2CH2)mOH  Formula 1 wherein n is an integer of 26 to 50, and m is an integer of 4 to 100. The composition is useful in coloring molded articles of thermoplastic resin. Colored resin molded articles using the composition are also disclosed.

    摘要翻译: 公开了一种着色树脂组合物,其包含分散剂,颜料和热塑性树脂,其中分散剂由下式1表示,热塑性树脂为茂金属聚烯烃:其中n为26-50的整数,m 为4〜100的整数。该组合物可用于着色热塑性树脂的模塑制品。 还公开了使用该组合物的着色树脂模塑制品。

    Process for producing colored resin composition and utilization thereof

    公开(公告)号:US07001937B2

    公开(公告)日:2006-02-21

    申请号:US10240831

    申请日:2002-02-14

    IPC分类号: C08J3/22 C08J3/215 C08K5/06

    摘要: A process for the production of a colored resin composition, comprising a step (A) of producing an aqueous slurry of a pigment, a step (B) of producing a melting composition of metallocene type polyolefin containing a dispersant and a solvent, a step (C) of kneading the aqueous slurry obtained in the step (A) with the melting composition obtained in the step (B) and a step (D) of removing the solvent and the water from the kneaded mixture obtained in the step (C), a colored composition obtained in the above process has excellent in pigment dispersibility and high color developing properties, a colored resin molded article obtained from the colored resin composition do not give a physical-properties inhibition of 5% or higher and has a color developing properties.

    Transistor layout for semiconductor integrated circuit
    15.
    发明授权
    Transistor layout for semiconductor integrated circuit 失效
    半导体集成电路晶体管布局

    公开(公告)号:US5498897A

    公开(公告)日:1996-03-12

    申请号:US270085

    申请日:1994-07-01

    CPC分类号: H01L27/105 Y10S257/927

    摘要: A semiconductor integrated circuit comprising a MOSFET having a metal wiring layer formed via an insulating film above and along the gate electrode of the MOSFET. The MOSFET is structured such that its channel length is small or channel width is large, and an input signal is applied from at least both end sides of the gate electrode thereof. Since the metal wiring layer for the input signal is formed on the gate electrode of the MOSFET, high-speed operation is possible without increasing the layout area. FIG. 1.

    摘要翻译: 一种半导体集成电路,包括具有金属布线层的MOSFET,所述金属布线层经由MOSFET上方并沿着栅极电极的绝缘膜形成。 MOSFET的结构使得其沟道长度小或沟道宽度大,并且从其栅电极的至少两端侧施加输入信号。 由于用于输入信号的金属布线层形成在MOSFET的栅电极上,因此可以在不增加布局面积的情况下进行高速运算。 图。 1。

    Semiconductor storage device
    16.
    发明授权
    Semiconductor storage device 失效
    半导体存储设备

    公开(公告)号:US5596535A

    公开(公告)日:1997-01-21

    申请号:US267267

    申请日:1994-06-28

    CPC分类号: G11C29/80 G11C29/84

    摘要: A semiconductor storage device equipped with redundant circuits designed to increase the operating speed and to simplify the layout by providing for the detection of the storage of a faulty address and access to the faulty address so as to substitute a spare word line for a faulty word line. The semiconductor storage device includes a MOSFET for causing current to flow through a pair of fuse means by a complementary address signal at one end of a fuse means corresponding to each bit of the faulty address. The other end thereof is connected to a wired OR logic so as to generate a decision signal. The fuse means corresponding to the MOSFET which is turned on by the faulty address signal is cut off to store a faulty address. The faulty address storage and comparison units can be formed with the pair of fuses and the MOSFET. High-speed operation and a high-density layout in the form of a matrix can thus be achieved efficiently by switching the faulty circuit to a spare circuit while the normal decoder is operating.

    摘要翻译: 一种装备有冗余电路的半导体存储装置,其设计用于通过提供对故障地址的存储的检测和对故障地址的访问来提高操作速度和简化布局,以便将备用字线替换为有缺陷的字线 。 半导体存储装置包括用于使电流通过对应于故障地址的每个位的熔丝装置的一端的互补地址信号流过一对熔丝装置的MOSFET。 其另一端连接到有线OR逻辑,以产生判定信号。 对应于通过故障地址信号导通的MOSFET的熔丝装置被切断以存储故障地址。 故障地址存储和比较单元可以由一对保险丝和MOSFET形成。 因此,在通常的解码器工作时,通过将故障电路切换到备用电路,能够有效地实现矩阵形式的高速运转和高密度布局。