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71 条记录 (耗时 0.033 秒)

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    11.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120068160A1

    公开(公告)日：2012-03-22

    申请号：US13075591

    申请日：2011-03-30

    申请人： Yuichi YAMAZAKI ,  Makoto Wada ,  Tadashi Sakai

    发明人： Yuichi YAMAZAKI ,  Makoto Wada ,  Tadashi Sakai

    IPC分类号： H01L29/12 ,  H01L21/20 ,  B82Y99/00

    CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L21/02491 ,  H01L21/02527 ,  H01L29/45 ,  H01L29/66015 ,  H01L29/76

    摘要： A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.

    摘要翻译： 根据实施例的半导体器件包括催化金属膜，石墨烯膜，接触插塞和调整膜。 催化金属膜形成在基板的上方。 在催化金属膜上形成石墨烯膜。 接触塞连接到石墨烯膜。 调整膜形成在与石墨烯膜的表面的接触插塞连接的区域以外的区域中，以相对于费米能级与连接到接触插塞的区域相同的方向调节狄拉克点位置。

    Semiconductor device and method for fabricating the same
    14.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08378335B2

    公开(公告)日：2013-02-19

    申请号：US13075591

    申请日：2011-03-30

    申请人： Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai

    发明人： Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai

    IPC分类号： H01L29/06

    CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L21/02491 ,  H01L21/02527 ,  H01L29/45 ,  H01L29/66015 ,  H01L29/76

    摘要： A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.

    摘要翻译： 根据实施例的半导体器件包括催化金属膜，石墨烯膜，接触插塞和调整膜。 催化金属膜形成在基板的上方。 在催化金属膜上形成石墨烯膜。 接触塞连接到石墨烯膜。 调整膜形成在与石墨烯膜的表面的接触插塞连接的区域以外的区域中，以相对于费米能级与连接到接触插塞的区域相同的方向调节狄拉克点位置。

    Semiconductor device
    15.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08482126B2

    公开(公告)日：2013-07-09

    申请号：US13224929

    申请日：2011-09-02

    申请人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

    发明人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

    IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/532

    CPC分类号： H01L23/53276 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.

    摘要翻译： 根据本发明的实施例，一种装置包括基板，形成在基板上或上方的基体，以及一对布线。 基体在平面图中具有线状并沿长度方向延伸。 一对配线包括在基体的长度方向上形成在基体的两侧面上的第一和第二催化剂层，夹着基体; 以及分别以与基体的长度方向接触的方式形成在基体的两侧面上的第一和第二石墨烯层，所述石墨烯层包括垂直层叠的多个石墨烯层 分别相对于基体的两个侧面。

    SEMICONDUCTOR DEVICE
    17.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130056873A1

    公开(公告)日：2013-03-07

    申请号：US13224929

    申请日：2011-09-02

    申请人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

    发明人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

    IPC分类号： H01L23/532

    CPC分类号： H01L23/53276 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.

    摘要翻译： 根据本发明的实施例，一种装置包括基板，形成在基板上或上方的基体，以及一对布线。 基体在平面图中具有线状并沿长度方向延伸。 一对配线包括在基体的长度方向上形成在基体的两侧面上的第一和第二催化剂层，夹着基体; 以及分别以与基体的长度方向接触的方式形成在基体的两侧面上的第一和第二石墨烯层，所述石墨烯层包括垂直层叠的多个石墨烯层 分别相对于基体的两个侧面。

    ROBOT SYSTEM
    19.
    发明申请
    ROBOT SYSTEM 审中-公开
    机器人系统

    公开(公告)号：US20120000891A1

    公开(公告)日：2012-01-05

    申请号：US13172800

    申请日：2011-06-29

    申请人： Mitsuaki NAKANISHI ,  Makoto Wada

    发明人： Mitsuaki NAKANISHI ,  Makoto Wada

    IPC分类号： B23K37/02

    CPC分类号： B23K11/115

    摘要： For teaching a welding-point position for a robot, processing of a robot system includes first processing for moving a spot welding gun to a position at which movable and fixed electrodes pinch the welding point; second processing for extending the movable electrode toward a member to be welded by driving of a motor, detecting contact between the movable electrode and the member based on a torque command to the motor, and stopping the movable electrode after the contact is detected; and third processing for operating the robot toward the movable electrode to move the fixed electrode toward the member while maintaining the contact between the movable electrode and the member by the driving of the motor, detecting contact between the fixed electrode and the member based on a disturbance torque acting on a joint of the robot, and stopping the operation of the robot after the contact is detected.

    摘要翻译： 为了教导机器人的焊点位置，机器人系统的处理包括将点焊枪移动到可动和固定电极夹住焊接点的位置的第一处理; 第二处理，用于通过电动机的驱动将可动电极朝向待焊接的部件延伸，基于对电动机的转矩指令检测可动电极和部件之间的接触，并且在检测到接触之后停止可动电极; 以及用于将机器人朝向可动电极操作的第三处理，以通过电动机的驱动来保持固定电极朝向构件的同时保持可动电极和构件之间的接触，基于扰动来检测固定电极和构件之间的接触 作用在机器人的关节上的扭矩，并且在检测到接触之后停止机器人的操作。