公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US08487449B2

公开(公告)日：2013-07-16

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L29/70 ,  H01L21/4763

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

公开(公告)号：US20130134592A1

公开(公告)日：2013-05-30

申请号：US13684297

申请日：2012-11-23

申请人： Yuichi YAMAZAKI ,  Makoto Wada ,  Masayuki Kitamura ,  Tadashi Sakai

发明人： Yuichi YAMAZAKI ,  Makoto Wada ,  Masayuki Kitamura ,  Tadashi Sakai

IPC分类号： H05K1/09 ,  H01L23/532

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y99/00 ,  H01L2924/0002 ,  H05K1/097 ,  Y10S977/734 ,  Y10S977/762 ,  H01L2924/00

摘要： A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.

公开(公告)号：US20130075929A1

公开(公告)日：2013-03-28

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768 ,  H01L23/522 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US09131611B2

公开(公告)日：2015-09-08

申请号：US13684297

申请日：2012-11-23

申请人： Yuichi Yamazaki ,  Makoto Wada ,  Masayuki Kitamura ,  Tadashi Sakai

发明人： Yuichi Yamazaki ,  Makoto Wada ,  Masayuki Kitamura ,  Tadashi Sakai

IPC分类号： H01L23/48 ,  H05K1/09 ,  H01L23/532 ,  B82Y10/00 ,  B82Y99/00 ,  B82Y30/00

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y99/00 ,  H01L2924/0002 ,  H05K1/097 ,  Y10S977/734 ,  Y10S977/762 ,  H01L2924/00

摘要： A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.

摘要翻译： 实施例的线包括：基板; 设置在基板上的金属膜; 设置在金属膜上的金属部件; 以及形成在所述金属部分上的石墨烯线，其中所述石墨烯线与所述金属膜电连接，并且所述金属膜和所述金属部分使用彼此不同的金属或合金形成。

公开(公告)号：US20120049370A1

公开(公告)日：2012-03-01

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L23/522 ,  H01L21/768 ,  B82Y99/00

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US08648464B2

公开(公告)日：2014-02-11

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L23/48

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20120068160A1

公开(公告)日：2012-03-22

申请号：US13075591

申请日：2011-03-30

申请人： Yuichi YAMAZAKI ,  Makoto Wada ,  Tadashi Sakai

发明人： Yuichi YAMAZAKI ,  Makoto Wada ,  Tadashi Sakai

IPC分类号： H01L29/12 ,  H01L21/20 ,  B82Y99/00

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L21/02491 ,  H01L21/02527 ,  H01L29/45 ,  H01L29/66015 ,  H01L29/76

摘要： A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.

摘要翻译： 根据实施例的半导体器件包括催化金属膜，石墨烯膜，接触插塞和调整膜。 催化金属膜形成在基板的上方。 在催化金属膜上形成石墨烯膜。 接触塞连接到石墨烯膜。 调整膜形成在与石墨烯膜的表面的接触插塞连接的区域以外的区域中，以相对于费米能级与连接到接触插塞的区域相同的方向调节狄拉克点位置。