公开(公告)号：US20150140776A1

公开(公告)日：2015-05-21

申请号：US14584504

申请日：2014-12-29

Applicant: Micron Technology, Inc.

Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishal Nirmal Ramaswamy ,  Qian Tao

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

公开(公告)号：US08921821B2

公开(公告)日：2014-12-30

申请号：US13738201

申请日：2013-01-10

Applicant: Micron Technology, Inc.

Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy ,  Qian Tao

IPC: H01L29/00 ,  H01L29/02 ,  H01L21/20 ,  G11C11/00 ,  G11C11/15 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

公开(公告)号：US20140231743A1

公开(公告)日：2014-08-21

申请号：US14259376

申请日：2014-04-23

Applicant: Micron Technology, Inc.

Inventor： D. V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

公开(公告)号：US20140191182A1

公开(公告)日：2014-07-10

申请号：US13738201

申请日：2013-01-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  D.V. Nirmal Ramaswamy ,  Qian Tao

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

公开(公告)号：US08753919B2

公开(公告)日：2014-06-17

申请号：US14105051

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： D. V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

IPC: H01L29/02

CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

公开(公告)号：US20140106533A1

公开(公告)日：2014-04-17

申请号：US14105051

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： D.V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

公开(公告)号：US20130258550A1

公开(公告)日：2013-10-03

申请号：US13903364

申请日：2013-05-28

Applicant: Micron Technology, Inc.

Inventor： Rishikesh Krishnan ,  F. Daniel Gealy ,  Vidya Srividya ,  Noel Rocklein

IPC: H01G4/255

CPC classification number: H01G4/255 ,  H01L27/10852 ,  H01L28/65

Abstract: Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a workpiece, and forming a conductive layer on the underlying layer. The method can continue by disposing a dielectric layer on the conductive layer. The underlying layer is a material that causes the dielectric layer to have a higher dielectric constant than without the underlying layer being present under the conductive layer. For example, the underlying layer can impart a structure or another property to the film stack that causes an otherwise amorphous dielectric layer to crystallize without having to undergo a separate high temperature annealing process after disposing the dielectric layer onto the conductive layer. Several examples of this method are expected to be very useful for forming dielectric layers with high dielectric constants because they avoid using a separate high temperature annealing process.