公开(公告)号：US20240186267A1

公开(公告)日：2024-06-06

申请号：US18442498

申请日：2024-02-15

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Adam L. Olson ,  John D. Hopkins ,  Jeslin J. Wu

IPC: H01L23/00 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762

CPC classification number: H01L23/562 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/76224

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

公开(公告)号：US20230354595A1

公开(公告)日：2023-11-02

申请号：US18332919

申请日：2023-06-12

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H10B41/27 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H10B41/27 ,  H01L21/32139 ,  H01L21/31144 ,  G03F7/0035

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

公开(公告)号：US11678481B2

公开(公告)日：2023-06-13

申请号：US17173405

申请日：2021-02-11

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H01L21/311 ,  H01L27/11556 ,  H01L21/3213 ,  H01L27/11582 ,  G03F7/00

CPC classification number: H01L27/11556 ,  H01L21/31144 ,  H01L21/32139 ,  G03F7/0035 ,  H01L27/11582

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

公开(公告)号：US11239181B2

公开(公告)日：2022-02-01

申请号：US16662705

申请日：2019-10-24

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Lifang Xu ,  Jian Li

IPC: H01L27/1157 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11529

Abstract: Some embodiments include an integrated assembly having a semiconductor die with memory array regions and one or more regions peripheral to the memory array regions. A stack of alternating insulative and conductive levels extends across the memory array regions and passes into at least one of the peripheral regions. The stack generates bending stresses on the die. At least one stress-moderating region extends through the stack and is configured to alleviate the bending stresses.

公开(公告)号：US11127691B2

公开(公告)日：2021-09-21

申请号：US16235665

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Adam L. Olson ,  John D. Hopkins ,  Jeslin J. Wu

IPC: H01L23/00 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/311

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

公开(公告)号：US20210125939A1

公开(公告)日：2021-04-29

申请号：US16662705

申请日：2019-10-24

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Lifang Xu ,  Jian Li

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly having a semiconductor die with memory array regions and one or more regions peripheral to the memory array regions. A stack of alternating insulative and conductive levels extends across the memory array regions and passes into at least one of the peripheral regions. The stack generates bending stresses on the die. At least one stress-moderating region extends through the stack and is configured to alleviate the bending stresses.

公开(公告)号：US10930659B2

公开(公告)日：2021-02-23

申请号：US16531815

申请日：2019-08-05

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H01L27/11556 ,  H01L21/3213 ,  H01L21/311 ,  H01L27/11582 ,  G03F7/00

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

公开(公告)号：US20190355735A1

公开(公告)日：2019-11-21

申请号：US16531815

申请日：2019-08-05

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H01L27/11556 ,  H01L21/311 ,  H01L21/3213

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.