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公开(公告)号：US11527294B2
公开(公告)日：2022-12-13
申请号：US17001769
申请日：2020-08-25
发明人： Vamsi Pavan Rayaprolu , Karl D. Schuh , Jeffrey S. McNeil, Jr. , Kishore K. Muchherla , Ashutosh Malshe , Jiangang Wu
摘要： A system includes a memory device including a plurality of groups of memory cells and a processing device that is operatively coupled to the memory device. The processing device is to receive a request to determine a reliability of the plurality of groups of memory cells. The processing device is further to perform, in response to receipt of the request, a scan operation on a sample portion of the plurality of groups of memory cells to determine a reliability of the sample portion that is representative of the reliability of the plurality of groups of memory cells.
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公开(公告)号：US11520699B2
公开(公告)日：2022-12-06
申请号：US17211544
申请日：2021-03-24
发明人： Kishore Kumar Muchherla , Kulachet Tanpairoj , Peter Feeley , Sampath K. Ratnam , Ashutosh Malshe
摘要： A processing device of a memory sub-system is configured to receive a request to add content to a system data structure, wherein a first plurality of blocks of a common pool of blocks are allocated to the system data structure and a second plurality of blocks of the common pool of blocks are allocated to user data; determine whether user data has been written to the second plurality of blocks of the common pool of blocks within a threshold amount of time; and responsive to determining that the user data has not been written to the second plurality of blocks within the threshold amount of time, allocate a block from the second plurality of blocks of the common pool of blocks allocated to user data to the first plurality of blocks of the common pool of blocks allocated for the system data structure.
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公开(公告)号：US11467980B2
公开(公告)日：2022-10-11
申请号：US16739983
申请日：2020-01-10
IPC分类号： G06F12/123 , G06F12/02 , G06F11/30
摘要： A first block that is assigned a first sequence identifier can be identified. A determination can be made as to whether the assigned first sequence identifier satisfies a threshold sequence identifier condition that corresponds to a difference between the first sequence identifier assigned to the first block and second sequence identifier assigned to a second block. In response to determining that the assigned first sequence identifier satisfies the threshold sequence identifier condition, a media management operation can be performed on the first block.
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公开(公告)号：US11456037B2
公开(公告)日：2022-09-27
申请号：US17318603
申请日：2021-05-12
发明人： Harish Singidi , Kishore Kumar Muchherla , Gianni Stephen Alsasua , Ashutosh Malshe , Sampath Ratnam , Gary F. Besinga , Michael G. Miller
摘要： Disclosed in some examples, are methods, systems, and machine readable mediums which compensate for read-disturb effects by shifting the read voltages used to read the value in a NAND cell based upon a read counter. For example, the NAND memory device may have a read counter that corresponds to a group of NAND cells (e.g., a page, a block, a superblock). Anytime a NAND cell in the group is read, the read counter may be incremented. The read voltage, Vread, may be adjusted based on the read counter to account for the read disturb voltage.
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公开(公告)号：US11450392B2
公开(公告)日：2022-09-20
申请号：US16718051
申请日：2019-12-17
发明人： Kishore Kumar Muchherla , Harish R. Singidi , Renato C. Padilla , Vamsi Pavan Rayaprolu , Ashutosh Malshe , Sampath K. Ratnam
摘要： A processing device in a memory system maintains a counter to track a number of read operations performed on a data block of a memory device and determines that the number of read operations performed on the data block satisfies a first threshold criterion. The processing device further determines whether a number of scan operations performed on the data block satisfies a scan threshold criterion. Responsive to the number of scan operations performed on the data block satisfying the scan threshold criterion, the processing device performs a first data integrity scan to determine one or more first error rates for the data block, each of the one or more first error rates corresponding to a first set of wordlines of the data block, the first set comprising first alternating pairs of adjacent wordlines.
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公开(公告)号：US11436085B2
公开(公告)日：2022-09-06
申请号：US17112786
申请日：2020-12-04
发明人： Kishore Kumar Muchherla , Harish R. Singidi , Ashutosh Malshe , Vamsi Pavan Rayaprolu , Sampath K. Ratnam
摘要： Write operations are performed to write data to user blocks of the memory device and to write, to a first set of purposed blocks, purposed data related to the first data written at the memory device. Whether the first set of purposed blocks satisfy a condition indicating an endurance state of the first set of purposed blocks is determined. Responsive to the first set of purposed blocks satisfies the condition, one or more blocks from a pool of storage area blocks of the memory device are allocated to a second set of purposed blocks.
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公开(公告)号：US20220188040A1
公开(公告)日：2022-06-16
申请号：US17685102
申请日：2022-03-02
发明人： Gianni Stephen Alsasua , Harish Reddy Singidi , Peter Sean Feeley , Ashutosh Malshe , Renato Padilla, JR. , Kishore Kumar Muchherla , Sampath Ratnam
摘要： Systems and methods are disclosed, comprising a memory device comprising multiple groups of memory cells, the groups comprising a first group of memory cells and a second group of memory cells configured to store information at a same bit capacity per memory cell, and a processing device operably coupled to the memory device, the processing device configured to adjust a scan event threshold for one of the first or second groups of memory cells to a threshold less than a target scan event threshold for the first and second groups of memory cells to distribute scan events in time on the memory device.
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公开(公告)号：US11282564B1
公开(公告)日：2022-03-22
申请号：US17094970
申请日：2020-11-11
发明人： Vamsi Pavan Rayaprolu , Kishore Kumar Muchherla , Harish R. Singidi , Ashutosh Malshe , Gianni S. Alsasua
IPC分类号： G11C11/406 , G11C11/408 , G11C11/409 , G11C29/44
摘要： Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including identifying, among a first plurality of wordlines of a set of pages of the memory device, at least one wordline having a current value of a data state metric satisfying a first condition; determining new values of the data state metric of a second plurality of wordlines of the set of pages, wherein the at least one wordline is excluded from the second plurality of wordlines; and responsive to determining that the new values of the data state metric of one or more wordlines of the second plurality of wordlines satisfy a second condition, performing a media management operation with respect to the one or more wordlines.
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公开(公告)号：US20220083408A1
公开(公告)日：2022-03-17
申请号：US17531960
申请日：2021-11-22
摘要： A method includes obtaining a first operation execution time corresponding to an operation performed on a page of a first data unit of a memory device, determining whether the first operation execution time satisfies a condition that is based on a second operation execution time, wherein the second operation execution time is indicative of lack of defect in at least a second data unit of the memory device, and responsive to determining that the first operation execution time satisfies the condition that is based on the second operation execution time, initiating a defect scan operation of at least a subset of pages of the first data unit.
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公开(公告)号：US11269553B2
公开(公告)日：2022-03-08
申请号：US16878304
申请日：2020-05-19
发明人： Gianni Stephen Alsasua , Harish Reddy Singidi , Peter Sean Feeley , Ashutosh Malshe , Renato Padilla, Jr. , Kishore Kumar Muchherla , Sampath Ratnam
摘要： Systems and methods are disclosed, comprising a memory device comprising multiple groups of memory cells, the groups comprising a first group of memory cells and a second group of memory cells configured to store information at a same bit capacity per memory cell, and a processing device operably coupled to the memory device, the processing device configured to adjust a scan event threshold for one of the first or second groups of memory cells to a threshold less than a target scan event threshold for the first and second groups of memory cells to distribute scan events in time on the memory device.
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