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公开(公告)号：US20100072460A1
公开(公告)日：2010-03-25
申请号：US12564091
申请日：2009-09-22
IPC分类号： H01L29/775 , H01L29/12 , H01L21/335
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/125 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/785 , H01L29/78642 , H01L29/78696 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device.
摘要翻译： 电子装置及其制造方法。 器件包括半导体区域，其可以是纳米线，电耦合到半导体区域的第一接触点和电容耦合到半导体区域的至少一个第二接触点。 第一触点和第二触点之间的半导体区域的至少一部分被偶极子层覆盖。 偶极层可以用作半导体区域上的局部栅极，以增强器件的电性能。
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公开(公告)号：US08754401B2
公开(公告)日：2014-06-17
申请号：US12870922
申请日：2010-08-30
申请人： Mikael T Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E Riel , Walter Heinrich Riess , Heinz Schmid
发明人： Mikael T Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E Riel , Walter Heinrich Riess , Heinz Schmid
CPC分类号： H01L29/7391 , H01L29/0665
摘要： An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material.
摘要翻译： 防止热载流子注入到栅极氧化物中的器件劣化的冲击电离场效应晶体管（I-MOS）器件。 该器件包括源极，漏极和栅极触点，以及源极和漏极之间的通道。 通道具有与通道中电荷载流子传输方向相垂直的维度，使得前两个子带的能量分离等于或超过通道材料的有效能带隙。
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13.发明授权公开(公告)号：US08969931B2
公开(公告)日：2015-03-03
申请号：US13503868
申请日：2010-10-18
IPC分类号： H01L29/76 , H01L23/62 , H01L21/336 , H01L29/775 , B82Y10/00 , H01L29/06 , H01L29/40 , H01L29/423 , H01L29/786 , H01L23/29
CPC分类号： H01L29/775 , B82Y10/00 , H01L23/29 , H01L29/0665 , H01L29/402 , H01L29/42392 , H01L29/78606 , H01L29/78621 , H01L29/78696 , H01L2924/0002 , Y10S977/773 , Y10S977/78 , H01L2924/00
摘要： A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.
摘要翻译： 一种半导体器件及其制造方法。 该器件包括：掺杂半导体，其具有源极区，漏极区，源极和漏极区之间的沟道，以及沟道和源极和漏极区中的每一个之间的延伸区域; 在通道上形成的门; 以及在每个延伸区域上的筛选涂层。 屏蔽涂层包括：（i）绝缘层，其介电常数不大于延伸区域的一半，并且直接形成在延伸区域上，和（ii）绝缘层上的屏蔽层，其中 屏蔽层屏蔽延伸区域中的掺杂剂离子化电位以抑制掺杂剂失活。
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公开(公告)号：US20110049476A1
公开(公告)日：2011-03-03
申请号：US12870922
申请日：2010-08-30
申请人： Mikael T. Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E. Riel , Walter Heinrich Riess , Heinz Schmid
发明人： Mikael T. Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E. Riel , Walter Heinrich Riess , Heinz Schmid
IPC分类号： H01L29/775
CPC分类号： H01L29/7391 , H01L29/0665
摘要： An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material.
摘要翻译： 防止热载流子注入到栅极氧化物中的器件劣化的冲击电离场效应晶体管（I-MOS）器件。 该器件包括源极，漏极和栅极触点，以及源极和漏极之间的通道。 通道具有与通道中电荷载流子传输方向相垂直的维度，使得前两个子带的能量分离等于或超过通道材料的有效能带隙。
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公开(公告)号：US07180107B2
公开(公告)日：2007-02-20
申请号：US10852891
申请日：2004-05-25
申请人： Joerg Appenzeller , Joachim Knoch
发明人： Joerg Appenzeller , Joachim Knoch
IPC分类号： H01L29/72
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/739 , H01L29/88 , H01L51/0048 , H01L51/0052 , H01L51/0562 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/755 , Y10S977/815 , Y10S977/855 , Y10S977/938
摘要： A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.
摘要翻译： 制造隧道状纳米管场效应晶体管的方法包括在纳米管中形成由晶体管的未掺杂沟道区分离的n掺杂区域和p掺杂区域。 为掺杂区域提供电触点，以及形成在沉积在晶体管的沟道区域的至少一部分上的栅极电介质层上的栅电极。
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公开(公告)号：US20050274992A1
公开(公告)日：2005-12-15
申请号：US10852891
申请日：2004-05-25
申请人： Joerg Appenzeller , Joachim Knoch
发明人： Joerg Appenzeller , Joachim Knoch
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/739 , H01L29/88 , H01L51/0048 , H01L51/0052 , H01L51/0562 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/755 , Y10S977/815 , Y10S977/855 , Y10S977/938
摘要： A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.
摘要翻译： 制造隧道状纳米管场效应晶体管的方法包括在纳米管中形成由晶体管的未掺杂沟道区分离的n掺杂区域和p掺杂区域。 为掺杂区域提供电触点，以及形成在沉积在晶体管的沟道区域的至少一部分上的栅极电介质层上的栅电极。
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