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11.发明申请SILICON PHOTONICS WAFER USING STANDARD SILICON-ON-INSULATOR PROCESSES THROUGH SUBSTRATE REMOVAL OR TRANSFER 有权使用通过基板去除或转移的标准硅绝缘体工艺的硅光电晶体公开(公告)号：US20130181233A1
公开(公告)日：2013-07-18
申请号：US13353162
申请日：2012-01-18
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。
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公开(公告)号：US20130084039A1
公开(公告)日：2013-04-04
申请号：US13211018
申请日：2011-08-16
申请人： FUAD E. DOANY , Benjamin G. Lee , Clint L. Schow
发明人： FUAD E. DOANY , Benjamin G. Lee , Clint L. Schow
IPC分类号： G02B6/32 , H01L21/302
CPC分类号： G02B6/32 , G02B6/30 , G02B6/4204 , G02B6/4244 , G02B6/425 , H01L21/302
摘要： A photonic integrated circuit apparatus is disclosed. The apparatus includes a photonic chip and a lens array coupling element. The photonic chip includes a waveguide at a side edge surface of the photonic chip. The lens array coupling element is mounted on a top surface of the photonic chip and on the side edge surface. The coupling element includes a lens array that is configured to modify spot sizes of light traversing to or from the waveguide. The coupling element further includes an overhang on a side of the coupling element that opposes the lens array and that abuts the top surface of the photonic chip. The overhang includes a vertical stop surface that has a depth configured to horizontally align an edge of the waveguide with a focal length of the lens array and that vertically aligns focal points of the lens array with the edge of the waveguide.
摘要翻译： 公开了一种光子集成电路装置。 该装置包括光子芯片和透镜阵列耦合元件。 光子芯片包括在光子芯片的侧边缘表面处的波导。 透镜阵列耦合元件安装在光子芯片的顶表面上并在侧边缘表面上。 耦合元件包括透镜阵列，其被配置为修改横穿波导的光的光斑大小。 耦合元件还包括在耦合元件的与透镜阵列相对并且邻接光子芯片的顶表面的一侧上的突出端。 突出部分包括垂直的止动表面，其具有配置成将波导的边缘与透镜阵列的焦距水平对准的深度，并且使透镜阵列的焦点与波导的边缘垂直对准。
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公开(公告)号：US09285554B2
公开(公告)日：2016-03-15
申请号：US13370886
申请日：2012-02-10
申请人： Fuad Doany , Benjamin G. Lee , Clint L. Schow
发明人： Fuad Doany , Benjamin G. Lee , Clint L. Schow
CPC分类号： G02B6/34 , G02B6/12 , G02B6/12002 , G02B6/12004 , G02B6/124 , G02B6/13 , G02B6/136 , G02B6/29323 , G02B6/30 , G02B6/305 , G02B6/32 , G02B6/3652 , G02B6/4214 , G02B6/43 , G02B2006/12104 , H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic integrated circuit for coupling light to or from an optical waveguide formed in an optical device layer in a near-normal angle to that layer. In an embodiment, the integrated circuit comprises a semiconductor body including a metal-dielectric stack, an optical device layer, a buried oxide layer and a semiconductor substrate arranged in series between first and second opposite sides of the semiconductor body. At least one optical waveguide is formed in the optical device layer for guiding light in a defined plane in that device layer. Diffractive coupling elements are disposed in the optical device layer to couple light from the waveguide toward the second surface of the semiconductor body at a near-normal angle to the defined plane in the optical device layer. In an embodiment, an optical fiber is positioned against the semiconductor body for receiving the light from the coupling elements.
摘要翻译： 一种光电子集成电路，用于将光耦合到形成在光学器件层中的光波导与该层成近似法线的角度。 在一个实施例中，集成电路包括半导体本体，其包括金属 - 电介质堆叠，光学器件层，埋入氧化物层和半导体衬底，其串联布置在半导体主体的第一和第二相对侧之间。 在光学器件层中形成至少一个光波导，用于在该器件层中的限定平面中引导光。 衍射耦合元件设置在光学器件层中，以将光从波导朝向半导体本体的第二表面以与光学器件层中的限定平面成近似法线的角度耦合。 在一个实施例中，光纤抵靠半导体本体定位，用于接收来自耦合元件的光。
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14.发明授权Photonic modulator with forward-and reverse-biased diodes for separate tuning and modulating elements 有权具有正向和反向偏置二极管的光子调制器，用于单独的调谐和调制元件公开(公告)号：US08805126B2
公开(公告)日：2014-08-12
申请号：US13588871
申请日：2012-08-17
IPC分类号： G02F1/225
CPC分类号： G02F1/0121 , G02F1/025 , G02F1/2257
摘要： A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.
摘要翻译： 一种用于调制器的方法和结构，其包括针对功率和面积优化的正向偏置二极管以执行调谐功能，以及针对速度进行优化的反向偏置二极管以执行调制功能。
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公开(公告)号：US20130209026A1
公开(公告)日：2013-08-15
申请号：US13370886
申请日：2012-02-10
申请人： Fuad Doany , Benjamin G. Lee , Clint L. Schow
发明人： Fuad Doany , Benjamin G. Lee , Clint L. Schow
CPC分类号： G02B6/34 , G02B6/12 , G02B6/12002 , G02B6/12004 , G02B6/124 , G02B6/13 , G02B6/136 , G02B6/29323 , G02B6/30 , G02B6/305 , G02B6/32 , G02B6/3652 , G02B6/4214 , G02B6/43 , G02B2006/12104 , H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic integrated circuit for coupling light to or from an optical waveguide formed in an optical device layer in a near-normal angle to that layer. In an embodiment, the integrated circuit comprises a semiconductor body including a metal-dielectric stack, an optical device layer, a buried oxide layer and a semiconductor substrate arranged in series between first and second opposite sides of the semiconductor body. At least one optical waveguide is formed in the optical device layer for guiding light in a defined plane in that device layer. Diffractive coupling elements are disposed in the optical device layer to couple light from the waveguide toward the second surface of the semiconductor body at a near-normal angle to the defined plane in the optical device layer. In an embodiment, an optical fiber is positioned against the semiconductor body for receiving the light from the coupling elements.
摘要翻译： 一种光电子集成电路，用于将光耦合到形成在光学器件层中的光波导与该层成近似法线的角度。 在一个实施例中，集成电路包括半导体本体，其包括金属 - 电介质堆叠，光学器件层，埋入氧化物层和半导体衬底，其串联布置在半导体主体的第一和第二相对侧之间。 在光学器件层中形成至少一个光波导，用于在该器件层中的限定平面中引导光。 衍射耦合元件设置在光学器件层中，以将光从波导朝向半导体本体的第二表面以与光学器件层中的限定平面成近似法线的角度耦合。 在一个实施例中，光纤抵靠半导体本体定位，用于接收来自耦合元件的光。
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公开(公告)号：US09268890B2
公开(公告)日：2016-02-23
申请号：US13619049
申请日：2012-09-14
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F17/5009 , G06F2217/02 , G06F2217/08 , G06F2217/84
摘要： Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the designed photonic switch diode and the selected switch driver circuit. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the designed photonic switch diode and the selected switch driver circuit.
摘要翻译： 设计了一个光子切换系统。 光子开关二极管被设计为基于与多个性能度量中的每一个对应的加权值来获得与光子切换系统相关联的多个性能度量中的每个性能度量。 从用于光子交换系统的多个开关驱动器电路中选择开关驱动器电路。 基于设计的光子开关二极管和所选择的开关驱动器电路，确定与光子切换系统相关联的每个性能度量是否满足或超过与多个性能度量中的每一个对应的阈值。 响应于确定与光子交换系统相关联的每个性能度量符合或超过对应于每个性能度量的阈值，使用所设计的光子开关二极管和所选择的开关驱动器电路来设计光子交换系统。
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17.发明授权Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer 有权硅光子晶片使用标准的绝缘体上硅工艺，通过衬底去除或转移公开(公告)号：US08901576B2
公开(公告)日：2014-12-02
申请号：US13353162
申请日：2012-01-18
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。
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18.发明申请PHOTONIC MODULATOR WITH FORWARD-AND REVERSE-BIASED DIODES FOR SEPARATE TUNING AND MODULATING ELEMENTS 有权具有用于单独调谐和调制元件的前向和反向偏置二极管的光电调制器公开(公告)号：US20140050436A1
公开(公告)日：2014-02-20
申请号：US13588871
申请日：2012-08-17
CPC分类号： G02F1/0121 , G02F1/025 , G02F1/2257
摘要： A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.
摘要翻译： 一种用于调制器的方法和结构，其包括针对功率和面积优化的正向偏置二极管以执行调谐功能，以及针对速度进行优化的反向偏置二极管以执行调制功能。
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公开(公告)号：US08775992B2
公开(公告)日：2014-07-08
申请号：US13604337
申请日：2012-09-05
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G02F1/0121 , G02F1/025 , G02F2202/105
摘要： Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the photonic switch diode designed and the switch driver circuit selected. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the photonic switch diode designed and the switch driver circuit selected.
摘要翻译： 设计了一个光子切换系统。 光子开关二极管被设计为基于与多个性能度量中的每一个对应的加权值来获得与光子切换系统相关联的多个性能度量中的每个性能度量。 从用于光子交换系统的多个开关驱动器电路中选择开关驱动器电路。 基于所设计的光开关二极管和选择的开关驱动器电路，确定与光子交换系统相关联的每个性能度量是否满足或超过与多个性能度量中的每一个对应的阈值。 响应于确定与光子交换系统相关联的每个性能度量符合或超过对应于每个性能度量的阈值，使用所设计的光子开关二极管和所选择的开关驱动器电路设计光子开关系统。
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