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    SUGGESTED CONTENT WITH ATTRIBUTE PARAMETERIZATION
    12.
    发明申请
    SUGGESTED CONTENT WITH ATTRIBUTE PARAMETERIZATION 有权
    建议内容与属性参数化

    公开(公告)号：US20110246443A1

    公开(公告)日：2011-10-06

    申请号：US13079434

    申请日：2011-04-04

    申请人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

    发明人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

    IPC分类号： G06F17/30

    CPC分类号： G06F21/6218 ,  G06F21/31 ,  G06F2221/2115 ,  H04L63/105

    摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

    摘要翻译： 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种源，而不管这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

    END-CUT FIRST APPROACH FOR CRITICAL DIMENSION CONTROL
    13.
    发明申请
    END-CUT FIRST APPROACH FOR CRITICAL DIMENSION CONTROL 有权
    用于关键尺寸控制的最终方法

    公开(公告)号：US20110124134A1

    公开(公告)日：2011-05-26

    申请号：US12625957

    申请日：2009-11-25

    申请人： Li-Te S. Lin ,  Meng Jun Wang ,  Ya Hui Chang ,  Hui Ouyang

    发明人： Li-Te S. Lin ,  Meng Jun Wang ,  Ya Hui Chang ,  Hui Ouyang

    IPC分类号： H01L21/66 ,  H01L21/302

    CPC分类号： H01L21/28026 ,  H01L21/28008 ,  H01L21/28123 ,  H01L21/32139 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating a semiconductor device is disclosed. The method includes forming at least one material layer over a substrate; performing an end-cut patterning process to form an end-cut pattern overlying the at least one material layer; transferring the end-cut pattern to the at least one material layer; performing a line-cut patterning process after the end-cut patterning process to form a line-cut pattern overlying the at least one material layer; and transferring the line-cut pattern to the at least one material layer.

    摘要翻译： 公开了一种制造半导体器件的方法。 该方法包括在衬底上形成至少一个材料层; 执行端切割图案化工艺以形成覆盖所述至少一个材料层的端部切割图案; 将所述切割图案转印到所述至少一个材料层; 在切割图案化工艺之后进行线切割图案化工艺以形成覆盖至少一个材料层的线切割图案; 以及将所述切线图案转移到所述至少一个材料层。

    METHODS FOR FORMING METAL GATE TRANSISTORS
    14.
    发明申请
    METHODS FOR FORMING METAL GATE TRANSISTORS 有权
    形成金属栅极晶体管的方法

    公开(公告)号：US20100240204A1

    公开(公告)日：2010-09-23

    申请号：US12719532

    申请日：2010-03-08

    申请人： Matt YEH ,  Shun Wu Lin ,  Hui Ouyang

    发明人： Matt YEH ,  Shun Wu Lin ,  Hui Ouyang

    IPC分类号： H01L21/28 ,  H01L21/302 ,  B08B3/00

    CPC分类号： H01L21/02068 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

    摘要： A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

    摘要翻译： 提供了一种在衬底上清洁金属栅极晶体管的栅极电介质上的扩散阻挡层的方法。 该方法包括用包含至少一种表面活性剂的第一溶液清洗扩散阻挡层。 第一溶液的表面活性剂的量约为临界胶束浓度（CMC）或更高。 扩散阻挡层用第二种溶液清洗。 第二种解决方案具有去除扩散阻挡层上的颗粒的物理力。 第二溶液基本上不与扩散阻挡层相互作用。

    Suggested Content with Attribute Parameterization
    15.
    发明申请
    Suggested Content with Attribute Parameterization 有权
    具有属性参数化的建议内容

    公开(公告)号：US20070208755A1

    公开(公告)日：2007-09-06

    申请号：US11680550

    申请日：2007-02-28

    申请人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

    发明人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

    IPC分类号： G06F17/30

    CPC分类号： G06F21/6218 ,  G06F21/31 ,  G06F2221/2115 ,  H04L63/105

    摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

    摘要翻译： 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种或多个源，无论这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

    Partial-via-first dual-damascene process with tri-layer resist approach
    16.
    发明申请
    Partial-via-first dual-damascene process with tri-layer resist approach 审中-公开
    具有三层抗蚀剂方法的部分通过第一双镶嵌工艺

    公开(公告)号：US20070134917A1

    公开(公告)日：2007-06-14

    申请号：US11301917

    申请日：2005-12-13

    申请人： Tsai-Chun Li ,  Tsang-Jiuh Wu ,  Hui Ouyang

    发明人： Tsai-Chun Li ,  Tsang-Jiuh Wu ,  Hui Ouyang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76808 ,  H01L21/7681 ,  H01L21/76813

    摘要： A partial-via-first dual-damascene method using a tri-layer resist method forms a first via hole through partial thickness of a dielectric layer, and forms a tri-layer resist structure on the dielectric layer to fill the first via hole with the bottom photoresist layer. A dry development process is performed to transfer a first opening on the top photoresist layer to the middle layer and the bottom photoresist layer, and expose the first via hole again, and remove the top photoresist layer. A dry etching process is then performed to form a second via hole under the first via hole and a trench over the second via hole. Finally a wet striping process is used to remove the remainder of the photoresist layer.

    摘要翻译： 使用三层抗蚀剂法的部分通孔 - 第一双镶嵌法通过介电层的部分厚度形成第一通孔，并在介电层上形成三层抗蚀剂结构，以填充第一通孔 底部光刻胶层。 进行干式显影处理以将顶部光致抗蚀剂层上的第一开口转移到中间层和底部光致抗蚀剂层，并再次暴露第一通孔，并除去顶部光致抗蚀剂层。 然后执行干蚀刻工艺以在第一通孔下方形成第二通孔，并在第二通孔上形成沟槽。 最后，使用湿条纹工艺去除光致抗蚀剂层的其余部分。

    NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS
    19.
    发明申请
    NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS 有权
    用于在门过程中去除多余聚合物的新方法

    公开(公告)号：US20100124823A1

    公开(公告)日：2010-05-20

    申请号：US12275082

    申请日：2008-11-20

    申请人： Matt Yeh ,  Fan-Yi Hsu ,  Shun Wu Lin ,  Shu-Yuan Ku ,  Hui Ouyang

    发明人： Matt Yeh ,  Fan-Yi Hsu ,  Shun Wu Lin ,  Shu-Yuan Ku ,  Hui Ouyang

    IPC分类号： H01L21/302 ,  H01L21/71

    CPC分类号： H01L21/32134 ,  H01L21/02071 ,  H01L21/28035 ,  H01L21/823828 ,  H01L21/82385 ,  H01L27/11 ,  H01L29/66583

    摘要： A method is provided for fabricating a semiconductor device. The method includes removing a silicon material from a gate structure located on a substrate through a cycle including: etching the silicon material to remove a portion thereof, where the substrate is spun at a spin rate, applying a cleaning agent to the substrate, and drying the substrate; and repeating the cycle, where a subsequent cycle includes a subsequent spin rate for spinning the substrate during the etching and where the subsequent spin rate does not exceed the spin rate of the previous cycle.

    摘要翻译： 提供了制造半导体器件的方法。 该方法包括通过循环从位于衬底上的栅极结构去除硅材料，包括：蚀刻硅材料以除去其中的一部分，其中衬底以旋转速率纺丝，向衬底施加清洁剂，并干燥 基材; 并重复该循环，其中随后的循环包括用于在蚀刻期间旋转衬底的随后旋转速率，并且其中随后的旋转速率不超过先前循环的旋转速率。