Optical waveguide element, optical element, method for producing optical
waveguide element and method for producing periodic domain-inverted
structure
    13.
    发明授权
    Optical waveguide element, optical element, method for producing optical waveguide element and method for producing periodic domain-inverted structure 失效
    光波导元件,光学元件,光波导元件的制造方法以及周期性畴反转结构的制造方法

    公开(公告)号:US5943465A

    公开(公告)日:1999-08-24

    申请号:US826377

    申请日:1997-04-09

    摘要: An excellent periodic domain-inverted structure formed on a ferroelectric optical single crystal substrate is provided having an improved crystalline property of the substrate and an improved resistance to optical damage and output of the domain-inverted structure and the like optical waveguide structure by forming protruded and recessed portions on a single-domained ferroelectric optical single crystal substrate 1, growing a film of a ferroelectric optical single crystal film 4 on the respective recessed portion of the single crystal substrate 1 by a liquid phase epitaxial growing process. At that time, the Curie temperature of the film 4 is lower than the liquid phase epitaxial growing temperature of the film 4, and the Curie temperature of the substrate 1 is higher than the liquid phase epitaxial growing temperature of the film 4, and the film 4 is polarized in an opposite direction to the polarization direction of the substrate 1.

    摘要翻译: 提供了形成在铁电光学单晶衬底上的优异的周期性畴反转结构,其具有改善的衬底的晶体性质,并且通过形成凸出和/或不透明的方式提高了对畴反转结构等光波导结构的光学损伤和输出的抵抗力 在单导体铁电光学单晶衬底1上的凹部,通过液相外延生长工艺在单晶衬底1的各个凹部上生长铁电光学单晶膜4的膜。 此时,膜4的居里温度低于膜4的液相外延生长温度,并且基板1的居里温度高于膜4的液相外延生长温度,并且膜 4在与基板1的偏振方向相反的方向上极化。

    Blue laser beam oscillating method and system
    15.
    发明申请
    Blue laser beam oscillating method and system 审中-公开
    蓝色激光束振荡方法和系统

    公开(公告)号:US20060120415A1

    公开(公告)日:2006-06-08

    申请号:US11329019

    申请日:2006-01-10

    IPC分类号: H01S3/10

    CPC分类号: G02F1/377 G02F2202/20

    摘要: It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.

    摘要翻译: 提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法,并且可以提高蓝色激光束的输出功率。 从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。 蓝色激光束“B”从平板光波导8发射。

    Second harmonic wave-generation device
    18.
    发明授权
    Second harmonic wave-generation device 失效
    二次谐波发生装置

    公开(公告)号:US06181462B2

    公开(公告)日:2001-01-30

    申请号:US09321057

    申请日:1999-05-27

    IPC分类号: G02F202

    CPC分类号: G02F1/377

    摘要: A second harmonic wave-generation device for generating a second harmonic wave composed of an extraordinary ray from a fundamental wave composed of an ordinary ray, including a solid crystal of lithium potassium niobate-lithium potassium tantalate solid solution crystal or a single crystal made of lithium potassium niobate, wherein a mode field diameter of the fundamental wave inside the second harmonic wave-generation device is greater than that of the second harmonic wave.

    摘要翻译: 一种二次谐波发生装置,用于产生由包含由铌酸锂钾 - 钽酸锂钾固溶体晶体构成的由普通射线构成的基波的特殊射线构成的二次谐波,或由锂构成的单晶 铌酸钾,其中二次谐波产生装置内的基波的模场直径大于二次谐波的模场直径。

    Method for manufacturing group III nitride single crystals
    19.
    发明申请
    Method for manufacturing group III nitride single crystals 有权
    III族氮化物单晶的制造方法

    公开(公告)号:US20100107969A1

    公开(公告)日:2010-05-06

    申请号:US12655826

    申请日:2010-01-08

    IPC分类号: C30B7/00

    摘要: An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

    摘要翻译: 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2,从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM
    20.
    发明申请
    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM 有权
    沉积硅基薄膜的方法和沉积硅基薄膜的方法

    公开(公告)号:US20090246942A1

    公开(公告)日:2009-10-01

    申请号:US12411507

    申请日:2009-03-26

    IPC分类号: H01L21/20 C23C16/503

    摘要: A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

    摘要翻译: 一种硅基薄膜沉积设备,包括多个透明电极,设置成面对相应的对置电极,其间具有空间。 随后,在从原料气体喷射孔向支撑电极注入原料气体的同时,从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时,将气体从 气体出口,从而将室中的压力控制在大于1kPa的压力。 然后,将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此,即使在电极之间的距离增加的状态下,也能有效地产生等离子体,能够提高膜厚的面内分布。