摘要:
A second harmonic generation element including a single crystal substrate having a fundamental composition of K.sub.3 Li.sub.2-2x (Nb.sub.1-y Ta.sub.y).sub.5+5z O.sub.15-x+12.5z and an optical waveguide made of an epitaxial film with a fundamental composition of K.sub.3 Li.sub.2-2a (Nb.sub.1-b Ta.sub.b).sub.5+5c O.sub.15-a+12.5c and refractive index different from that of the single crystal substrate, wherein: -0.5.ltoreq.a, x.ltoreq.0.625 0.ltoreq.b, y.ltoreq.0.5 0.8.ltoreq.(5-2x)/(5+5z), (5-2a)/(5+5c).ltoreq.1.2.
摘要:
An optical waveguide device includes a substrate having a pair of opposed main planes, an optical waveguide formed on one of the opposed main planes, and an electrode portion, wherein a thickness of a portion of the substrate at at least a location where the electrode portion is formed is made smaller than at a remainder thereof.
摘要:
An excellent periodic domain-inverted structure formed on a ferroelectric optical single crystal substrate is provided having an improved crystalline property of the substrate and an improved resistance to optical damage and output of the domain-inverted structure and the like optical waveguide structure by forming protruded and recessed portions on a single-domained ferroelectric optical single crystal substrate 1, growing a film of a ferroelectric optical single crystal film 4 on the respective recessed portion of the single crystal substrate 1 by a liquid phase epitaxial growing process. At that time, the Curie temperature of the film 4 is lower than the liquid phase epitaxial growing temperature of the film 4, and the Curie temperature of the substrate 1 is higher than the liquid phase epitaxial growing temperature of the film 4, and the film 4 is polarized in an opposite direction to the polarization direction of the substrate 1.
摘要:
An optical waveguide device has a substrate composed of a nonlinear optical material and a periodically domain-inverted structure having the same composition as the nonlinear optical material, where the domain-inverted structure has a refractive index distribution relying on the domain-inverted structure.
摘要:
It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.
摘要:
An optical waveguide device includes a waveguide layer that converts a wavelength of incident light and emits converted light. In the waveguide layer, a ridge waveguide and slab waveguides are provided, the slab waveguides being formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies a multi-mode condition for the incident light, and light propagating through the ridge waveguide is in a single mode.
摘要:
An optical waveguide element includes a three-dimensional optical waveguide of a bulky non-linear optical crystal, a substrate, and a joining layer made of an amorphous material. The substrate is joined to the optical waveguide via the joining layer.
摘要:
A second harmonic wave-generation device for generating a second harmonic wave composed of an extraordinary ray from a fundamental wave composed of an ordinary ray, including a solid crystal of lithium potassium niobate-lithium potassium tantalate solid solution crystal or a single crystal made of lithium potassium niobate, wherein a mode field diameter of the fundamental wave inside the second harmonic wave-generation device is greater than that of the second harmonic wave.
摘要:
An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.
摘要:
A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.