Method for manufacturing group III nitride single crystals
    1.
    发明申请
    Method for manufacturing group III nitride single crystals 有权
    III族氮化物单晶的制造方法

    公开(公告)号:US20100107969A1

    公开(公告)日:2010-05-06

    申请号:US12655826

    申请日:2010-01-08

    IPC分类号: C30B7/00

    摘要: An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

    摘要翻译: 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2,从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

    Method for manufacturing group III nitride single crystals
    2.
    发明授权
    Method for manufacturing group III nitride single crystals 有权
    III族氮化物单晶的制造方法

    公开(公告)号:US08404045B2

    公开(公告)日:2013-03-26

    申请号:US12655826

    申请日:2010-01-08

    IPC分类号: C30B21/02

    摘要: An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

    摘要翻译: 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2,从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM
    3.
    发明申请
    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM 有权
    沉积硅基薄膜的方法和沉积硅基薄膜的方法

    公开(公告)号:US20090246942A1

    公开(公告)日:2009-10-01

    申请号:US12411507

    申请日:2009-03-26

    IPC分类号: H01L21/20 C23C16/503

    摘要: A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

    摘要翻译: 一种硅基薄膜沉积设备,包括多个透明电极,设置成面对相应的对置电极,其间具有空间。 随后,在从原料气体喷射孔向支撑电极注入原料气体的同时,从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时,将气体从 气体出口,从而将室中的压力控制在大于1kPa的压力。 然后,将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此,即使在电极之间的距离增加的状态下,也能有效地产生等离子体,能够提高膜厚的面内分布。

    Process for producing a planar body of an oxide single crystal
    6.
    发明授权
    Process for producing a planar body of an oxide single crystal 有权
    用于制造氧化物单晶的平面体的方法

    公开(公告)号:US06527851B2

    公开(公告)日:2003-03-04

    申请号:US09798750

    申请日:2001-03-02

    IPC分类号: C30B1508

    CPC分类号: C30B15/08 C30B15/00 C30B29/30

    摘要: A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

    摘要翻译: 当通过微型拉下法生长氧化物单晶的平面体时,连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触,然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A,并且在肩部之后制造平面体14B。 在这种情况下,将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1%以下。

    Method for producing a single-crystalline film of KLN or KLNT
    7.
    发明授权
    Method for producing a single-crystalline film of KLN or KLNT 失效
    KLN或KLNT单晶膜的制造方法

    公开(公告)号:US06447606B2

    公开(公告)日:2002-09-10

    申请号:US09320335

    申请日:1999-05-26

    IPC分类号: C30B2812

    摘要: A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.

    摘要翻译: 一种由铌酸锂钾 - 钾酸钾固溶体的单晶制成的单晶膜或铌酸锂钾的单晶的方法,包括以下步骤:制备由单晶膜材料制成的靶 制备由铌酸锂钾锂铌酸钾固溶体的单晶或铌酸锂钾的单晶构成的基体,照射靶,通过解离和蒸发来气化构成靶的分子,并外延生长单晶 电影在基础上。

    Second harmonic wave-generating element
    9.
    发明授权
    Second harmonic wave-generating element 失效
    二次谐波发生元件

    公开(公告)号:US06204957B1

    公开(公告)日:2001-03-20

    申请号:US09307525

    申请日:1999-05-07

    IPC分类号: G02F137

    摘要: A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).

    摘要翻译: 一种用于从基波产生二次谐波的二次谐波发生元件,具有由具有K3Li2-x(Nb1-YTaY)5 + XO15 + Z的基本组成的第一外延材料制成的光波导层,下部部分 由具有K3Li2-X + A(Nb1-Y-BTaY + B)5 + X-AO15 + Z的基本组成的第二外延材料制成,由具有K 3 Li 2 -X + C的基本组成的第三外延材料制成的外包层 (Nb1-Y-DTaY + D)5 + X-CO15 + Z,形成在光波导层上并与光波导层接触,其中X = 0.006〜0.5,Y = 0.00〜0.05,A = 0.006〜0.12,B = 0.005〜0.5 ,C = 0.006〜0.12,D = 0.005〜0.5,XA <= 0,XC> = 0,| AC |≤0.006,| BD |≤0.005)。

    Optical waveguide substrate, optical waveguide device, second harmonic
generation device, and process of producing optical waveguide substrate
    10.
    发明授权
    Optical waveguide substrate, optical waveguide device, second harmonic generation device, and process of producing optical waveguide substrate 失效
    光波导基板,光波导装置,二次谐波发生装置以及光波导基板的制造工序

    公开(公告)号:US5991067A

    公开(公告)日:1999-11-23

    申请号:US922565

    申请日:1997-09-03

    摘要: An optical waveguide substrate having a substrate made of ferroelectric optical single crystal and a ridge portion projected from a main plane of the substrate, has a construction such that the ridge portion has a base portion made of ferroelectric optical single crystal and an optical waveguide formed on the base portion. The optical waveguide substrate is formed by forming at least one optical waveguide layer on a main plane of a substrate made of ferroelectric optical single crystal, and mechanically working main planes of the optical waveguide layer and the substrate to form a ridge portion projected from the main plane of the substrate. The optical waveguide substrate can reduce a light transmission loss, increase an extinction ratio, and improve an electric field applying efficiency.

    摘要翻译: 具有由铁电光学单晶构成的基板和从基板的主面突出的脊部的光波导基板具有这样的结构,使得该脊部具有由铁电光学单晶构成的基部和形成在 基部。 光波导基板通过在由铁电光学单晶制成的基板的主平面上形成至少一个光波导层,以及在光波导层和基板的机械加工主平面上形成从主体突出的脊部 基板的平面。 光波导基板可以减少光传输损耗,提高消光比,提高电场施加效率。