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60 条记录 (耗时 0.037 秒)

    Optimized annular copper TSV
    14.
    发明授权
    Optimized annular copper TSV 有权
    优化环形铜TSV

    公开(公告)号：US08487425B2

    公开(公告)日：2013-07-16

    申请号：US13167107

    申请日：2011-06-23

    申请人： Paul S Andry ,  Mukta G Farooq ,  Robert Hannon ,  Subramanian S Iyer ,  Emily R Kinser ,  Cornelia K Tsang ,  Richard P Volant

    发明人： Paul S Andry ,  Mukta G Farooq ,  Robert Hannon ,  Subramanian S Iyer ,  Emily R Kinser ,  Cornelia K Tsang ,  Richard P Volant

    IPC分类号： H01L23/04 ,  H01L23/48

    CPC分类号： H01L21/76846 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

    摘要翻译： 本公开提供了热机械可靠的铜TSV和在BEOL处理期间形成这种TSV的技术。 TSV构成延伸穿过半导体衬底的环形沟槽。 衬底限定沟槽的内侧壁和外侧壁，该侧壁分隔5至10微米的距离。 包括铜或铜合金的导电路径从所述第一介电层的上表面通过所述衬底在所述沟槽内延伸。 基板厚度可以为60微米或更小。 具有导电连接到导电路径的互连金属化的电介质层直接形成在所述环形沟槽上。

    OPTIMIZED ANNULAR COPPER TSV
    16.
    发明申请
    OPTIMIZED ANNULAR COPPER TSV 有权
    优化的环形铜片TSV

    公开(公告)号：US20120326309A1

    公开(公告)日：2012-12-27

    申请号：US13167107

    申请日：2011-06-23

    申请人： PAUL S ANDRY ,  Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Emily R. Kinser ,  Cornelia K. Tsang ,  Richard P. Volant

    发明人： PAUL S ANDRY ,  Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Emily R. Kinser ,  Cornelia K. Tsang ,  Richard P. Volant

    IPC分类号： H01L23/48 ,  H01L21/283

    CPC分类号： H01L21/76846 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

    摘要翻译： 本公开提供了热机械可靠的铜TSV和在BEOL处理期间形成这种TSV的技术。 TSV构成延伸穿过半导体衬底的环形沟槽。 衬底限定沟槽的内侧壁和外侧壁，该侧壁分隔5至10微米的距离。 包括铜或铜合金的导电路径从所述第一介电层的上表面通过所述衬底在所述沟槽内延伸。 基板厚度可以为60微米或更小。 具有导电连接到导电路径的互连金属化的电介质层直接形成在所述环形沟槽上。

    Method of inhibition of metal diffusion arising from laser dicing
    19.
    发明授权
    Method of inhibition of metal diffusion arising from laser dicing 失效
    抑制激光切割引起的金属扩散的方法

    公开(公告)号：US07566637B2

    公开(公告)日：2009-07-28

    申请号：US11955484

    申请日：2007-12-13

    申请人： Mukta G Farooq ,  Robert Hannon ,  Dae-Young Jung

    发明人： Mukta G Farooq ,  Robert Hannon ,  Dae-Young Jung

    IPC分类号： H01L21/304

    CPC分类号： H01L21/02076

    摘要： Method of inhibiting metal diffusion arising from laser dicing is provided. The method includes dividing a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the method exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment includes a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch may be performed on the chip.

    摘要翻译： 提供了抑制激光切割引起的金属扩散的方法。 该方法包括将晶片分成至少一个芯片。 该芯片包括内部金属特征。 分散在芯片的外表面上沉积至少一种金属物质。 在分割芯片之后，该方法将芯片暴露于具有给定压力（例如，小于一个大气压）的加热的环境环境中。 环境包括能够与金属物质结合的化学试剂。 另外，可以在芯片上进行湿式化学蚀刻。

    Inhibition of Metal Diffusion Arising from Laser Dicing
    20.
    发明申请
    Inhibition of Metal Diffusion Arising from Laser Dicing 失效
    激光切割引起的金属扩散抑制

    公开(公告)号：US20090155985A1

    公开(公告)日：2009-06-18

    申请号：US12173573

    申请日：2008-07-15

    申请人： Mukta G. Farooq ,  Robert Hannon ,  Da-Young Jung

    发明人： Mukta G. Farooq ,  Robert Hannon ,  Da-Young Jung

    IPC分类号： H01L21/304

    CPC分类号： H01L21/02076

    摘要： A method divides a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the process exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment comprises a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch can be performed on the chip.

    摘要翻译： 一种方法将晶片分成至少一个芯片。 该芯片包括内部金属特征。 分散在芯片的外表面上沉积至少一种金属物质。 在分割芯片之后，该工艺使芯片暴露于具有给定压力（例如，小于一个大气压）的加热环境环境中。 环境包括能够与金属物质结合的化学试剂。 另外，可以在芯片上进行湿式化学蚀刻。