公开(公告)号：US20060243906A1

公开(公告)日：2006-11-02

申请号：US11412976

申请日：2006-04-28

申请人： Atsuko Fukada ,  Mitsugu Sato ,  Naomasa Suzuki ,  Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi

发明人： Atsuko Fukada ,  Mitsugu Sato ,  Naomasa Suzuki ,  Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1508 ,  H01J2237/2449 ,  H01J2237/24507

摘要： In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.

摘要翻译： 在具有高分辨能力的电浸透镜中，加速从样本产生的二次电子，以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性，并且当选择性地检测低角度和高角度时 通过插入在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量，二次电子通过ExB偏转器被调节和偏转，使得二次电子的中心轴 在加速度下精细收敛与低仰角信号检测系统的中心轴一致，二次电子偏离高仰角信号检测系统的孔径。

公开(公告)号：US20060186351A1

公开(公告)日：2006-08-24

申请号：US11349974

申请日：2006-02-09

申请人： Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki

发明人： Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki

IPC分类号： G21G5/00

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/24495 ,  H01J2237/2817

摘要： To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.

摘要翻译： 为了建立能够在发射二次电子的方向上对高程和方位角进行排序并获得具有强调对比度的图像的技术，以便在制造期间对晶片检查中的浅凹凸和微观异物进行检查和分析 半导体器件使用电磁重叠物镜实现高分辨率，电子束使用物镜窄聚焦，用于加速晶片附近的二次电子的电场，以抑制对二次电子能量的依赖性 通过电子束的照射产生的二次电子的旋转，环状检测器板设置在电子源和物镜之间，并且从二次电子的位置观察二次电子的仰角的低角分量 并且高角度分量被分离，也是azimu 分离和检测。

公开(公告)号：US07462828B2

公开(公告)日：2008-12-09

申请号：US11412976

申请日：2006-04-28

申请人： Atsuko Fukada ,  Mitsugu Sato ,  Naomasa Suzuki ,  Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi

发明人： Atsuko Fukada ,  Mitsugu Sato ,  Naomasa Suzuki ,  Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1508 ,  H01J2237/2449 ,  H01J2237/24507

摘要： In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.

摘要翻译： 在具有高分辨能力的电浸透镜中，加速从样本产生的二次电子，以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性，并且当选择性地检测低角度和高角度时 通过插入在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量，二次电子通过ExB偏转器被调节和偏转，使得二次电子的中心轴 在加速度下精细收敛与低仰角信号检测系统的中心轴一致，二次电子偏离高仰角信号检测系统的孔径。

公开(公告)号：US06979821B2

公开(公告)日：2005-12-27

申请号：US10730106

申请日：2003-12-09

申请人： Naomasa Suzuki ,  Toshiro Kubo ,  Noriaki Arai ,  Mitsugu Sato ,  Hideo Todokoro ,  Yoichi Ose

发明人： Naomasa Suzuki ,  Toshiro Kubo ,  Noriaki Arai ,  Mitsugu Sato ,  Hideo Todokoro ,  Yoichi Ose

IPC分类号： H01J37/244 ,  G01Q30/02 ,  H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/04753 ,  H01J2237/04756

摘要： Image observation at high resolution is realized and irregularity information of a sample is obtained.The reflected electrons 12a emitted in a direction at a small angle with the surface of the sample 8 are detected by the detectors 10a and 10b arranged on the side of the electron source 1 of the magnetic field leakage type object lens 7 and a sample image is formed. Irregularity information of the sample is obtained from the effects of light and shade appearing in the sample image.

摘要翻译： 实现高分辨率的图像观察，获得样品的不规则信息。 通过布置在磁场泄漏型物镜7的电子源1侧的检测器10a和10b来检测与样品8的表面成小角度方向发射的反射电子12a和 形成样品图像。 从样本图像中出现的光和阴影的效果获得样本的不规则信息。

公开(公告)号：US06555819B1

公开(公告)日：2003-04-29

申请号：US09679006

申请日：2000-10-04

申请人： Naomasa Suzuki ,  Toshiro Kubo ,  Noriaki Arai ,  Mitsugu Sato ,  Hideo Todokoro ,  Yoichi Ose

发明人： Naomasa Suzuki ,  Toshiro Kubo ,  Noriaki Arai ,  Mitsugu Sato ,  Hideo Todokoro ,  Yoichi Ose

IPC分类号： H01J37244

CPC分类号： H01J37/28 ,  H01J2237/04753 ,  H01J2237/04756

摘要： Image observation at high resolution is realized and irregularity information of a sample is obtained. The reflected electrons 12a emitted in a direction at a small angle with the surface of the sample 8 are detected by the detectors 10a and 10b arranged on the side of the electron source 1 of the magnetic field leakage type object lens 7 and a sample image is formed. Irregularity information of the sample is obtained from the effects of light and shade appearing in the sample image.

摘要翻译： 实现高分辨率的图像观察并获得样品的不规则信息。在与样品8的表面成小角度的方向上发射的反射电子12a被布置在电子侧的检测器10a和10b检测 形成磁场泄漏型物镜7的源极1和样本图像。 从样本图像中出现的光和阴影的效果获得样本的不规则信息。

公开(公告)号：US20110101223A1

公开(公告)日：2011-05-05

申请号：US12985633

申请日：2011-01-06

申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

IPC分类号： G01N23/00 ,  G01N23/22

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/221 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495

摘要： An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

摘要翻译： 一种电子束装置，包括放置样品的样品台和电子光学系统。 电子光学系统包括产生一次电子束的电子枪，将一次电子束收敛在样品上的浸没物镜，将一次束照射产生的二次粒子分离为样品的ExB偏转器 从一次光束的光轴，二次粒子碰撞的反射部件，位于反射部件下方的辅助电极，多个附带的粒子检测器，其选择性地检测三元的速度分量和方位分量 由二次粒子与反射部件碰撞而产生的粒子和位于反射部件上方的中心检测器。

公开(公告)号：US07875849B2

公开(公告)日：2011-01-25

申请号：US11877715

申请日：2007-10-24

申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/221 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495

摘要： The present invention provides a charged-particle beam inspection technology that enables to acquire a shadow contrast enhanced image, and to detect a shallow roughness with sufficient sensitively, which is caused by a micro-scale or nano-scale foreign matter in an inspection of a semiconductor device having a circuit pattern or the like.Immersion objective lens is employed as an objective lens for the high-resolution observation. A converged electron beam is obtained due to the objective lens. An assist electrode, a right detector and a left detector are provided in the objective lens. A velocity component of a secondary electron caused by the irradiation of the sample with an electron beam is discriminated. An azimuth component is further discriminated.

摘要翻译： 本发明提供了一种带电粒子束检查技术，其能够获得阴影对比度增强图像，并且在检查中由微尺度或纳米级异物引起的足够敏感地检测浅的粗糙度 具有电路图案等的半导体器件。 浸入式物镜被用作用于高分辨率观察的物镜。 由于物镜得到会聚的电子束。 辅助电极，右检测器和左检测器设置在物镜中。 鉴别由电子束照射样品引起的二次电子的速度分量。 进一步鉴别方位分量。

公开(公告)号：US07956324B2

公开(公告)日：2011-06-07

申请号：US12155038

申请日：2008-05-29

申请人： Noritsugu Takahashi ,  Muneyuki Fukuda ,  Hideo Todokoro ,  Mitsugu Sato

发明人： Noritsugu Takahashi ,  Muneyuki Fukuda ,  Hideo Todokoro ,  Mitsugu Sato

IPC分类号： H01J37/26

CPC分类号： G01N23/225 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221

摘要： The invention provides a charged particle beam apparatus capable of preventing image errors in a display image and capturing a clear display image. A display image displayed on a display unit has a rectangular shape having sides that are substantially parallel to coordinate axes of a rectangular coordinate system determined by wafer alignment. A charged particle beam is radiated onto an area including a display image in a direction that is not parallel to the coordinate axes of the reference rectangular coordinate system to scan the area. Then, among image information obtained by scanning, only information of a position within the display image is displayed on the image display unit. In this way, a clear display image without brightness variation is obtained.

摘要翻译： 本发明提供一种能够防止显示图像中的图像错误并捕获清晰显示图像的带电粒子束装置。 在显示单元上显示的显示图像具有与由晶片对准确定的直角坐标系的坐标轴基本平行的侧面的矩形。 带电粒子束在与平行于参考直角坐标系的坐标轴不平行的方向上辐射到包括显示图像的区域上以扫描该区域。 然后，在通过扫描获得的图像信息中，只有显示图像中的位置的信息被显示在图像显示单元上。 以这种方式，可以获得没有亮度变化的清晰显示图像。

公开(公告)号：US06838667B2

公开(公告)日：2005-01-04

申请号：US09983898

申请日：2001-10-26

申请人： Ruriko Tsuneta ,  Masanari Koguchi ,  Mari Nozoe ,  Muneyuki Fukuda ,  Mitsugu Sato

发明人： Ruriko Tsuneta ,  Masanari Koguchi ,  Mari Nozoe ,  Muneyuki Fukuda ,  Mitsugu Sato

IPC分类号： H01J37/04 ,  G01Q30/04 ,  H01J37/153 ,  H01J37/21 ,  H01J37/22 ,  H01J37/28 ,  G01N23/225

CPC分类号： H01J37/21 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/216 ,  H01J2237/2482 ,  H01J2237/31745 ,  H01J2237/31749

摘要： By use of charged particle beam images picked up in different conditions, a positional displacement caused by parallax is analyzed, and an optics of an apparatus for charged particle beam microscopy is corrected automatically. An analysis method using phase difference of Fourier transform images and having analytic accuracy lower than that for one pixel is adopted for the displacement analysis. In addition, a degree of coincidence between images calculated in this analysis method is used as a criterion for evaluating the reliability of an analysis result. Since the analysis method based on parallax is low in specimen dependency, the operation range is expanded. In addition, by adopting a high-accuracy displacement analysis method, the apparatus correction accuracy is improved by one digit. A malfunction preventing flow is added using the degree of coincidence as a judgement criterion. Thus, the apparatus can deal with unmanned operation. In addition, the degree of coincidence can be used as a monitor of inspection states or a record of states in an inspection apparatus.

公开(公告)号：US20090101817A1

公开(公告)日：2009-04-23

申请号：US12252862

申请日：2008-10-16

申请人： Takashi OHSHIMA ,  Michio Hatano ,  Hideyuki Nagaishi ,  Mitsugu Sato ,  Muneyuki Fukuda

发明人： Takashi OHSHIMA ,  Michio Hatano ,  Hideyuki Nagaishi ,  Mitsugu Sato ,  Muneyuki Fukuda

IPC分类号： G01N23/00

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/2441 ,  H01J2237/2443 ,  H01J2237/2444 ,  H01J2237/2445 ,  H01J2237/2482

摘要： The present invention provides a highly sensitive, thin detector useful for observing low-voltage, high-resolution SEM images, and provides a charged particle beam application apparatus based on such a detector. The charged particle beam application apparatus includes a charged particle irradiation source, a charged particle optics for irradiating a sample with a charged particle beam emitted from the charged particle irradiation source, and an electron detection section for detecting electrons that are secondarily generated from the sample. The electron detection section includes a diode device that is a combination of a phosphor layer, which converts the electrons to an optical signal, and a device for converting the optical signal to electrons and subjecting the electrons to avalanche multiplication, or includes a diode device having an electron absorption region that is composed of at least a wide-gap semiconductor substrate with a bandgap greater than 2 eV.

摘要翻译： 本发明提供了一种用于观察低电压，高分辨率SEM图像的高灵敏度，薄的检测器，并提供了基于这种检测器的带电粒子束施加装置。 带电粒子束施加装置包括带电粒子照射源，用于从带电粒子照射源发射的带电粒子束照射样品的带电粒子光学器件和用于检测从样品二次产生的电子的电子检测部分。 电子检测部分包括二极管器件，其是将电子转换成光信号的荧光体层的组合，以及用于将光信号转换为电子并使电子进行雪崩倍增的器件，或包括具有 至少由带隙大于2eV的宽间隙半导体衬底构成的电子吸收区域。