公开(公告)号：US06838667B2

公开(公告)日：2005-01-04

申请号：US09983898

申请日：2001-10-26

申请人： Ruriko Tsuneta ,  Masanari Koguchi ,  Mari Nozoe ,  Muneyuki Fukuda ,  Mitsugu Sato

发明人： Ruriko Tsuneta ,  Masanari Koguchi ,  Mari Nozoe ,  Muneyuki Fukuda ,  Mitsugu Sato

IPC分类号： H01J37/04 ,  G01Q30/04 ,  H01J37/153 ,  H01J37/21 ,  H01J37/22 ,  H01J37/28 ,  G01N23/225

CPC分类号： H01J37/21 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/216 ,  H01J2237/2482 ,  H01J2237/31745 ,  H01J2237/31749

摘要： By use of charged particle beam images picked up in different conditions, a positional displacement caused by parallax is analyzed, and an optics of an apparatus for charged particle beam microscopy is corrected automatically. An analysis method using phase difference of Fourier transform images and having analytic accuracy lower than that for one pixel is adopted for the displacement analysis. In addition, a degree of coincidence between images calculated in this analysis method is used as a criterion for evaluating the reliability of an analysis result. Since the analysis method based on parallax is low in specimen dependency, the operation range is expanded. In addition, by adopting a high-accuracy displacement analysis method, the apparatus correction accuracy is improved by one digit. A malfunction preventing flow is added using the degree of coincidence as a judgement criterion. Thus, the apparatus can deal with unmanned operation. In addition, the degree of coincidence can be used as a monitor of inspection states or a record of states in an inspection apparatus.

公开(公告)号：US08552373B2

公开(公告)日：2013-10-08

申请号：US13321583

申请日：2010-05-18

申请人： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

发明人： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

IPC分类号： H01J37/26 ,  H01J37/28 ,  G01N23/22 ,  G01N23/225

CPC分类号： H01J37/28 ,  H01J37/265 ,  H01J2237/2446 ,  H01J2237/2817

摘要： Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.

摘要翻译： 公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制 电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个 光束带电粒子装置通过切换。 因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

公开(公告)号：US20110133066A1

公开(公告)日：2011-06-09

申请号：US13059540

申请日：2009-09-14

申请人： Mari Nozoe ,  Taku Ninomiya

发明人： Mari Nozoe ,  Taku Ninomiya

IPC分类号： H01J37/26 ,  G12B13/00 ,  G01N23/22

CPC分类号： H01J37/28 ,  H01J37/265 ,  H01J2237/20292 ,  H01J2237/2817 ,  H01L22/12

摘要： An inspection apparatus and method are provided capable of suppressing electron beam focus drifts and irradiation-position deviations caused by sample surface charge-up by irradiation of an electron beam during micropattern inspection to thereby avoid false defect detection and also shorten an inspection time. The apparatus captures a plurality of images of alignment marks provided at dies, stores in a storage device deviations between the central coordinates of alignment mark images and the coordinates of the marks as a coordinate correction value, measures heights at a plurality of coordinates on the sample surface, captures images of the measured coordinates to perform focus adjustment, saves the relationship between such adjusted values and the sensor-measured heights in the storage as height correction values, and uses inspection conditions including the image coordinate correction values saved in the storage and the height correction values to correct the image coordinates and height of the sample.

摘要翻译： 提供了一种检查装置和方法，其能够通过微图案检查期间的电子束照射而抑制由样品表面充电引起的电子束聚焦漂移和照射位置偏差，从而避免错误检测，并且缩短检查时间。 该装置捕获在模具处设置的对准标记的多个图像，存储在存储装置中的对准标记图像的中心坐标和标记坐标之间的偏差作为坐标校正值，测量样本上的多个坐标上的高度 表面，捕获测量坐标的图像以执行焦点调整，将这种调整值与存储器中传感器测量的高度之间的关系保存为高度校正值，并使用检查条件，包括保存在存储器中的图像坐标校正值和 高度校正值来校正样品的图像坐标和高度。

公开(公告)号：US20080302964A1

公开(公告)日：2008-12-11

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/00 ,  G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 电路图案检查方法及其装置，其中待检查的样品的待检查部分的整体部分处于预定的改变状态，被检查的部分用成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US07211797B2

公开(公告)日：2007-05-01

申请号：US11098699

申请日：2005-04-05

申请人： Hidetoshi Nishiyama ,  Mari Nozoe

发明人： Hidetoshi Nishiyama ,  Mari Nozoe

IPC分类号： G21K7/00

CPC分类号： H01J37/026 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/047 ,  H01J2237/2594 ,  H01J2237/2817

摘要： The present invention provides an inspection technique using a charged particle beam by which a method of setting a condition for optimally charging an object to be inspected without relying on an operator's experience is established and a voltage contrast image with higher efficiency of defect detection than ever before can be obtained. The inspection method comprises the steps of scanning an area on a surface of a substrate having a specific pattern formed thereon with a primary charged particle beam, detecting signals of secondary electrons emitted from the area, forming an image of the area from detected signals, and generating a histogram from the image. All these steps are performed each time a condition of irradiation with the charged particle beam is changed. When two or more separate peaks appear in the histogram, the histogram is determined as an optimal condition for inspection, and inspection is performed based on the image obtained under that condition.

摘要翻译： 本发明提供了使用带电粒子束的检查技术，通过该技术，建立了不依赖于操作者的经验来设定用于最佳地对被检查物体进行充电的条件的方法以及比以往更高的缺陷检测效率的电压对比图像 可以获得。 检查方法包括以下步骤：利用初级带电粒子束扫描其上形成有特定图案的基板的表面上的区域，检测从该区域发射的二次电子的信号，从检测到的信号形成该区域的图像，以及 从图像生成直方图。 每当改变带电粒子束照射的条件时，都执行所有这些步骤。 当直方图中出现两个或多个单独的峰时，直方图被确定为检查的最佳条件，并且基于在该条件下获得的图像进行检查。

公开(公告)号：US20060243908A1

公开(公告)日：2006-11-02

申请号：US11452989

申请日：2006-06-15

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

公开(公告)号：US20060076490A1

公开(公告)日：2006-04-13

申请号：US11234313

申请日：2005-09-26

申请人： Yasuhiro Gunji ,  Taku Ninomiya ,  Ryuichi Funatsu ,  Yoshikazu Inada ,  Kenjirou Yamamoto ,  Mari Nozoe

发明人： Yasuhiro Gunji ,  Taku Ninomiya ,  Ryuichi Funatsu ,  Yoshikazu Inada ,  Kenjirou Yamamoto ,  Mari Nozoe

IPC分类号： G21K7/00

CPC分类号： G01R31/305 ,  H01J37/222 ,  H01J37/244 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.

摘要翻译： 使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。 该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

公开(公告)号：US06924482B2

公开(公告)日：2005-08-02

申请号：US10395197

申请日：2003-03-25

申请人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

发明人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

IPC分类号： G01R31/28 ,  G01Q10/00 ,  G01Q30/04 ,  G01R31/307 ,  H01L21/00 ,  H01L21/66 ,  G21K7/00

CPC分类号： H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

摘要翻译： 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

公开(公告)号：US06828554B2

公开(公告)日：2004-12-07

申请号：US10785949

申请日：2004-02-26

申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

IPC分类号： G01N2300

CPC分类号： H01J37/28 ,  H01J2237/2817

摘要： A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen in synchronism with the irradiation of the electron beam, processing the acquired image to detect a defect on the specimen, and outputting information regarding the detected defect. The image acquisition condition is determined based on plural images which are acquired by changing at least one of acceleration condition of the secondary electron and an electrical field in the vicinity of the specimen.

公开(公告)号：US06797954B2

公开(公告)日：2004-09-28

申请号：US10400588

申请日：2003-03-28

申请人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC分类号： H01J37244

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

摘要翻译： 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。