Abstract:
An acoustic wave device includes a support substrate, a silicon nitride film stacked on the support substrate, a silicon oxide film stacked on the silicon nitride film, a piezoelectric body stacked on the silicon oxide film and made of lithium tantalite, and an IDT electrode provided on one main surface of the piezoelectric body. For a wavelength normalized film thickness of the piezoelectric body, an Euler angle of the piezoelectric body, a wavelength normalized film thickness of the silicon nitride film, a wavelength normalized film thickness of the silicon oxide film, and a wavelength normalized film thickness of the IDT electrode, values are set so that at least one of a response intensity of a first higher order mode, corresponding to the response intensity of a second higher order mode, and of a response intensity of a third higher mode is greater than about −2.4.
Abstract:
An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is λ. A product of C56 and C56 has a positive value, and an absolute value of C56 of the material layer is greater than an absolute value of C56 of the piezoelectric body ( C 11 C 12 C 13 C 14 C 15 C 16 C 21 C 22 C 23 C 24 C 25 C 26 C 31 C 32 C 33 C 34 C 35 C 36 C 41 C 42 C 43 C 44 C 45 C 46 C 51 C 52 C 53 C 54 C 55 C 56 C 61 C 62 C 63 C 64 C 65 C 66 ) . Expression 1
Abstract:
An acoustic wave device includes a material layer which has Euler angles and an elastic constant at the Euler angles, a piezoelectric body which includes first and second principal surfaces opposing each other, is laminated directly or indirectly on the material layer so that the second principal surface is on the material layer side and has Euler angles, and whose elastic constant at the Euler angles, and an IDT electrode which is disposed on at least one of the first principal surface and the second principal surface of the piezoelectric body. At least one elastic constant among elastic constants C11 to C66 of the material layer not equal to 0 and at least one elastic constant among elastic constants C11 to C66 of the piezoelectric body not equal to 0 have opposite signs to each other.
Abstract:
An elastic wave resonator includes an interdigital transducer electrode provided on a piezoelectric substrate and including a first electrode layer made of Al or an alloy with Al as its primary component and including a first main surface on a side where the piezoelectric substrate is located and a second main surface on the opposite side from the first main surface. An SH wave is used as a propagated elastic wave. When a resonant frequency of the elastic wave resonator is fr and an anti-resonant frequency of the elastic wave resonator is fa, a minimum value of an absolute value of a distortion component in the first main surface calculated through a two-dimensional finite element method is about 1.4×10−3 or less at a frequency f expressed as: f=fr+0.06×bw, where bw is fa−fr.
Abstract:
When a current flowing in a series circuit including an equivalent resistance, an equivalent inductor, and an equivalent capacitance in an electric equivalent circuit of a specific resonator in each filter is defined as an acoustic path current, under conditions that a phase of an acoustic path current of a first transmission filter at a side of a common terminal at a frequency within a first transmission band is represented as θ1Tx, a phase of an acoustic path current of the first transmission filter at the side of the common terminal at a frequency within a second transmission band is represented as θ2Tx, a phase of an acoustic path current of a first reception filter at the side of the common terminal at a frequency within the first transmission band is represented as θ1Rx, and a phase of an acoustic path current of the first reception filter at the side of the common terminal at a frequency within the second transmission band is represented as θ2Rx, a multiplexer satisfies a first condition: |(2·θ1Tx−θ2Tx)−(2·θ1Rx−θ2Rx)|=180°±90°, or a second condition: |(2·θ2Tx−θ1Tx)−(2·θ2Rx−θ1Rx)|=180°±90°.
Abstract:
In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5λ. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of θB±4°. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from θB (°) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.
Abstract:
In a multiplexer, at least one acoustic wave filter includes a piezoelectric body made of lithium tantalate having Euler angles (φLT=0°±5°, θLT, ψLT=0°±15°), a support substrate, and an interdigital transducer (IDT) electrode. A frequency fh1_t(n) of a first higher-order mode satisfies below Formulas (3) and (4) in all acoustic wave filters (m) having a higher pass band than at least one acoustic wave filter (n) (n fu(m) Formula (3). fh1_t(n)
Abstract:
An elastic wave includes a piezoelectric substrate having a polarization direction denoted by an arrow Px, and first and second IDT electrodes arranged on the substrate in an elastic wave propagation direction with a shared reflector therebetween. A first bus bar of the first IDT electrode and a first end portion bus bar of a second reflector are connected to a wiring electrode to define a first terminal. A second bus bar of the first IDT electrode and a second end portion bus bar of the shared reflector are connected to each other to define a second terminal. A first end portion bus bar and a first bus bar are electrically connected to each other. A second bus bar and a second end portion bus bar are electrically connected to each other, and the first and second IDT electrodes and are connected in parallel between the first and second terminals.
Abstract:
A communication device is provided with a band elimination filter that has one end connected to an antenna terminal, and a first multiplexer that is connected to the other end of the band elimination filter. The band elimination filter is configured to eliminate signals of a frequency band that is different from the frequencies of signals transmitted and received in the first multiplexer, and is configured from a filter circuit that includes a bulk wave element.
Abstract:
An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second busbars facing each other, first electrode fingers each of which includes one end connected to the first busbar, and second electrode fingers each of which includes one end connected to the second busbar. The first and second electrode fingers are interdigitated with each other. A portion where the first and second electrode fingers overlap in an acoustic wave propagation direction is an intersecting region. A shape of the first and second electrode fingers in plan view includes a curved portion. In the intersecting region, resonant frequencies or anti-resonant frequencies are the same or substantially the same.