ACOUSTIC WAVE DEVICE, MULTIPLEXER, RADIO-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

    公开(公告)号:US20200177153A1

    公开(公告)日:2020-06-04

    申请号:US16783203

    申请日:2020-02-06

    Abstract: An acoustic wave device includes a support substrate, a silicon nitride film stacked on the support substrate, a silicon oxide film stacked on the silicon nitride film, a piezoelectric body stacked on the silicon oxide film and made of lithium tantalite, and an IDT electrode provided on one main surface of the piezoelectric body. For a wavelength normalized film thickness of the piezoelectric body, an Euler angle of the piezoelectric body, a wavelength normalized film thickness of the silicon nitride film, a wavelength normalized film thickness of the silicon oxide film, and a wavelength normalized film thickness of the IDT electrode, values are set so that at least one of a response intensity of a first higher order mode, corresponding to the response intensity of a second higher order mode, and of a response intensity of a third higher mode is greater than about −2.4.

    ACOUSTIC WAVE DEVICE, HIGH FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS

    公开(公告)号:US20190393858A1

    公开(公告)日:2019-12-26

    申请号:US16562506

    申请日:2019-09-06

    Abstract: An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is λ. A product of C56 and C56 has a positive value, and an absolute value of C56 of the material layer is greater than an absolute value of C56 of the piezoelectric body ( C 11 C 12 C 13 C 14 C 15 C 16 C 21 C 22 C 23 C 24 C 25 C 26 C 31 C 32 C 33 C 34 C 35 C 36 C 41 C 42 C 43 C 44 C 45 C 46 C 51 C 52 C 53 C 54 C 55 C 56 C 61 C 62 C 63 C 64 C 65 C 66 ) . Expression   1

    ACOUSTIC WAVE DEVICE, HIGH FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS

    公开(公告)号:US20190393856A1

    公开(公告)日:2019-12-26

    申请号:US16562503

    申请日:2019-09-06

    Abstract: An acoustic wave device includes a material layer which has Euler angles and an elastic constant at the Euler angles, a piezoelectric body which includes first and second principal surfaces opposing each other, is laminated directly or indirectly on the material layer so that the second principal surface is on the material layer side and has Euler angles, and whose elastic constant at the Euler angles, and an IDT electrode which is disposed on at least one of the first principal surface and the second principal surface of the piezoelectric body. At least one elastic constant among elastic constants C11 to C66 of the material layer not equal to 0 and at least one elastic constant among elastic constants C11 to C66 of the piezoelectric body not equal to 0 have opposite signs to each other.

    MULTIPLEXER
    15.
    发明申请

    公开(公告)号:US20220376675A1

    公开(公告)日:2022-11-24

    申请号:US17868817

    申请日:2022-07-20

    Abstract: When a current flowing in a series circuit including an equivalent resistance, an equivalent inductor, and an equivalent capacitance in an electric equivalent circuit of a specific resonator in each filter is defined as an acoustic path current, under conditions that a phase of an acoustic path current of a first transmission filter at a side of a common terminal at a frequency within a first transmission band is represented as θ1Tx, a phase of an acoustic path current of the first transmission filter at the side of the common terminal at a frequency within a second transmission band is represented as θ2Tx, a phase of an acoustic path current of a first reception filter at the side of the common terminal at a frequency within the first transmission band is represented as θ1Rx, and a phase of an acoustic path current of the first reception filter at the side of the common terminal at a frequency within the second transmission band is represented as θ2Rx, a multiplexer satisfies a first condition: |(2·θ1Tx−θ2Tx)−(2·θ1Rx−θ2Rx)|=180°±90°, or a second condition: |(2·θ2Tx−θ1Tx)−(2·θ2Rx−θ1Rx)|=180°±90°.

    ELASTIC WAVE RESONATOR, ELASTIC WAVE FILTER DEVICE, AND DUPLEXER
    18.
    发明申请
    ELASTIC WAVE RESONATOR, ELASTIC WAVE FILTER DEVICE, AND DUPLEXER 有权
    弹性波共振器,弹性波滤波器和双工器

    公开(公告)号:US20160149554A1

    公开(公告)日:2016-05-26

    申请号:US15014174

    申请日:2016-02-03

    Inventor: Ryo NAKAGAWA

    Abstract: An elastic wave includes a piezoelectric substrate having a polarization direction denoted by an arrow Px, and first and second IDT electrodes arranged on the substrate in an elastic wave propagation direction with a shared reflector therebetween. A first bus bar of the first IDT electrode and a first end portion bus bar of a second reflector are connected to a wiring electrode to define a first terminal. A second bus bar of the first IDT electrode and a second end portion bus bar of the shared reflector are connected to each other to define a second terminal. A first end portion bus bar and a first bus bar are electrically connected to each other. A second bus bar and a second end portion bus bar are electrically connected to each other, and the first and second IDT electrodes and are connected in parallel between the first and second terminals.

    Abstract translation: 弹性波包括具有由箭头Px表示的偏振方向的压电基板,以及在弹性波传播方向上布置在基板上的第一和第二IDT电极,其间具有共用反射体。 第一IDT电极的第一母线和第二反射器的第一端部汇流条连接到布线电极以限定第一端子。 第一IDT电极的第二母线和共享反射体的第二端部汇流条彼此连接以限定第二端子。 第一端部汇流条和第一汇流条彼此电连接。 第二母线和第二端部母线彼此电连接,并且第一和第二IDT电极并联连接在第一和第二端子之间。

    ACOUSTIC WAVE DEVICE AND FILTER DEVICE

    公开(公告)号:US20250167756A1

    公开(公告)日:2025-05-22

    申请号:US19007660

    申请日:2025-01-02

    Abstract: An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second busbars facing each other, first electrode fingers each of which includes one end connected to the first busbar, and second electrode fingers each of which includes one end connected to the second busbar. The first and second electrode fingers are interdigitated with each other. A portion where the first and second electrode fingers overlap in an acoustic wave propagation direction is an intersecting region. A shape of the first and second electrode fingers in plan view includes a curved portion. In the intersecting region, resonant frequencies or anti-resonant frequencies are the same or substantially the same.

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